Nonlinear dependence of optical gap of a-Si₁-xGex:H films on Ge content (x<0.4)

• Autorzy: Dimova-Malinovska, D.
• Konferencja: The E-MRS European Conference on Photovoltaics ; ( 25.10-27.10.1999)
• Języki publikacji: EN

Abstrakty

EN

The dependence of optical band gap of a-Si₁-xGex:H films on Ge content is discussed. The films are deposited by magnetron co-sputtering of c-Si target with c-Ge chips on it in Ar + H₂ atmosphere. It has been observed that concentration of the bondeh hydrogen decreases with Ge content in the films. The results of study show that variation of the optical band gap of a-Si₁-xGex:H films on Ge concentration follows the nonlinear law. This is related to the nonlinear changes of H concentration in the films.

Słowa kluczowe

EN

amorphous semiconductors; a-SiGe:H films; optical properties; magnetron sputtering

• Czasopismo: Opto-Electronics Review
• Rocznik: 2000
• Tom: Vol. 8, No. 4
• Strony: 382-384

Twórcy

autor

Dimova-Malinovska, D.

• Central Laboratory for Solar Energy and New Energy Sources, Bulgarian Academy of Sciences, 72 Tzarigradsko Chaussee Blvd., 1784 Sofia, Bulgaria,