Application of stain etched porous silicon in c-Si solar cells

• Autorzy: Dimova-Malinovska, D.
• Konferencja: The E-MRS European Conference on Photovoltaics ; ( 25.10-27.10.1999)
• Języki publikacji: EN

Abstrakty

EN

In this work application of porous silicon (PS) to c-Si solar cells is presented. The PS layer is formed between the fingers of the Al grid contact by the method of stain etching. The short circuit current, Isc, of the solar cells with PS between the grid contacts increases of 30-40% comparing with the solar cell without PS. The open circuit voltage decreases a little probably due to decreasing doping concentration of P in n+ - diffused layer, after stain etching, when 80 nm of it is converted to PS. The value of a fill factor does not change significantly. The spectral dependence of Isc demonstrates that it increases in the whole spectral region. This could be related to a decrease in reflectivity and partially to an increase in transparency of the emitter after PS formation.Tthe efficiency of solar cells increases of about 25-30%.

Słowa kluczowe

EN

solar cells; porous silicon; stain etching

• Czasopismo: Opto-Electronics Review
• Rocznik: 2000
• Tom: Vol. 8, No. 4
• Strony: 353-355
• Opis fizyczny: Bibliogr. 6 poz.

Twórcy

autor

Dimova-Malinovska, D.

• Central Laboratory for Solar Energy and New Energy Sources, Bulgarian Academy of Sciences, 72 Tzarigradsko Chaussee Blvd., 1784 Sofia, Bulgaria,