Heterostructures GexSe₁-x/Si as a material for solar cells

• Autorzy: Sheregii, E. M. , Pociask, M. M. , Tomaka, G. , Kąkol, T. , Pociask, M. A.
• Konferencja: The E-MRS European Conference on Photovoltaics ; ( 25.10-27.10.1999)
• Języki publikacji: EN

Abstrakty

EN

In Ge-Si heterostructure system, strain and compositional changes can be used to change the fundamental indirect absorption edge. It is well known that increase in Ge content in the GexSi₁-x shifts fundamental band edge to the longer wavelengths and causes strong increase in absorption coefficient. Theoretical description of increase in efficiency of solar cells based on this system in comparison with the silicon solar cells is given. A construction of photodiodes using heterostructure Ge₀.₂Si₀.₈/Si is proposed.

Słowa kluczowe

EN

GexSi1-x/Si; heterostructure; modelling

• Czasopismo: Opto-Electronics Review
• Rocznik: 2000
• Tom: Vol. 8, No. 4
• Strony: 350-352
• Opis fizyczny: Bibliogr. 6 poz.

Twórcy

autor

Sheregii, E. M.

autor

Pociask, M. M.

autor

Tomaka, G.

autor

Kąkol, T.

autor

Pociask, M. A.

• Institute of Physics, Pedagogical University, 16A Rejtana Str., 35-310 Rzeszów, Poland