Czasopismo
2000
|
Vol. 8, No. 4
|
323-327
Tytuł artykułu
Autorzy
Wybrane pełne teksty z tego czasopisma
Warianty tytułu
Konferencja
The E-MRS European Conference on Photovoltaics ; ( 25.10-27.10.1999)
Języki publikacji
Abstrakty
Structural changes of <001> - oriented Si-single crystal platelets after P+ ion implantation and subsequent thermal treatment were analysed by means of diffraction methods using the synchroton radiation with energy of 8 keV. Ion implantation was preceded by P and B diffusion processes to generate n-p junction and BSF (back sufrace field). The results obtained for such monocrystalline Si with a buried amorphised layer permitted to estimate the structural changes caused by the process of the layer formation. Analysis of the diffraction line profiles as well as of the pole figures showed that the crystal regions in the near-surface layer experienced certain misorientations. Both the effective depth of a strongly defected region, and the stress distribution in the sub-surface area were determoned. The evaluation of the diffraction patterns allowed estimating the widths of the amorphised layer and of the transition zone between the amorphised region and the bulk. Moreover, the static Debye-Waller coefficient L and the diffusion loss parameter d were calculated. The above structure parameters are compared with those for conventional Si solar cells (without structural modification).
Czasopismo
Rocznik
Tom
Strony
323-327
Opis fizyczny
Bibliogr. 10 poz.
Twórcy
autor
autor
autor
autor
autor
autor
autor
- Institute of Metallurgy and Materials Science, Polish Academy of Sciences, 25 Reymonta Str., Kraków, Poland, nmbonars@imim-pan.krakow.pl
Bibliografia
Typ dokumentu
Bibliografia
Identyfikatory
Identyfikator YADDA
bwmeta1.element.baztech-article-BWA1-0001-1008