NO₂ sensitivity of thin n-InP epitaxial layers

• Autorzy: Talazac, L. , Blanc, J. P. , Battut, V. , Mollot, F.
• Konferencja: International Seminar on Semiconductor Gas Sensors : SGS' 98 (1 ; 22-25.09.1998 ; Ustroń, Poland)
• Języki publikacji: EN

Abstrakty

EN

A new NO₂ resistive sensor using n-InP epitaxial layers grown by MBE on semi-insulating InP substrate is presented. A model based on field effect is proposed to explain interaction mechanisms and conductance variations. Simple theoretical calculations for the gas concentrations for the gas concentratration dependence are in good agreement with experiments.

• Czasopismo: Electron Technology
• Rocznik: 2000
• Tom: Vol. 33, No. 1/2
• Strony: 213-216
• Opis fizyczny: Bibliogr. 8 poz.

Twórcy

autor

Talazac, L.

autor

Blanc, J. P.

autor

Battut, V.

autor

Mollot, F.

• LASMEA (UMR 6602 du CNRS), Universite Blaise Pascal, Clermont-Ferrand II, 24, Avenue des Landais, 63177 Aubiere Cedex, France