Sensitivity of the atomic layer epitaxy (ALE) deposited SnOx thin films in function of their oxygen content

• Autorzy: Varhegyi, E. B. , Perczel, I. V. , Pinter, Z. , Utriainen, M. , Reti, F.
• Konferencja: International Seminar on Semiconductor Gas Sensors : SGS' 98 (1 ; 22-25.09.1998 ; Ustroń, Poland)
• Języki publikacji: EN

Abstrakty

EN

The SnOx layer deposited with a conventional atomic layer epitaxy (ALE) technique is highly oxygen deficient and the sensor has low resistance which increases with time. The CO sensitivity of the as deposited sensors is very low: as their resistance is low (great amount of charge carrier) the modification of the charge carrier concentration by the gas to be detected is negligible. A moderate temperature oxidative heat treatment leads to oxygen incorporation and to sensitivity increase. The oxygen incorporation into the vacancies was proved with AES and XPS analyses.

• Czasopismo: Electron Technology
• Rocznik: 2000
• Tom: Vol. 33, No. 1/2
• Strony: 79-81
• Opis fizyczny: Bibliogr. 6 poz.

Twórcy

autor

Varhegyi, E. B.

autor

Perczel, I. V.

autor

Pinter, Z.

autor

Utriainen, M.

autor

Reti, F.

• Technical University of Budapest, Departament of Atomic Physic, 1111 Budapest, Hungary,