RF-sputtered thin film gas sensors based on modified tin dioxide

• Autorzy: Radecka, M. , Pasierb, P. , Zakrzewska, K. , Kowal, A.
• Konferencja: International Seminar on Semiconductor Gas Sensors : SGS' 98 (1 ; 22-25.09.1998 ; Ustroń, Poland)
• Języki publikacji: EN

Abstrakty

EN

Thin films of tin dioxide modified by metallic additives such as Ti and W were deposited by rf reactive sputtering from mosaic targets. The influence of substrate temperature on the film crystallization and surface roughness was studied by means of Grazing Incidence Diffraction (GID), Atomic Force Microscopy (AFM) and light scattering experiments. The electrical measurements were performed in the temperature range 473÷773 K under reducing gases (hydrogen) in the concentration range 100÷10000 ppm.the sensor parameters such as sensitivity and signal stability were found to be affected by the film microstructure (grain size, the amount of the amorphous phase, surface roughness) and metallic additives.

• Czasopismo: Electron Technology
• Rocznik: 2000
• Tom: Vol. 33, No. 1/2
• Strony: 73-78
• Opis fizyczny: Bibliogr. 10 poz.

Twórcy

autor

Radecka, M.

autor

Pasierb, P.

autor

Zakrzewska, K.

autor

Kowal, A.

• University of Mining and Metallurgy, al. Mickiewicza 30, 30-059 Kraków, Poland,