Tin doxide sensor a very complex device: physico-chemical and technological approach

• Autorzy: Lalauze, R. , Pijolat, C. , Tournier, G. , Breuil, B.
• Konferencja: International Seminar on Semiconductor Gas Sensors : SGS' 98 (1 ; 22-25.09.1998 ; Ustroń, Poland)
• Języki publikacji: EN

Abstrakty

EN

According to various experiments, electrical properties of tin dioxide have been investigated in correlation with morphology, surface state properties and ways of elaboration. Effects of the anealing treatment of the sample, effects of an SO₂ chemical treatment have been studied in regards ti the performances of the device under different gases.

• Czasopismo: Electron Technology
• Rocznik: 2000
• Tom: Vol. 33, No. 1/2
• Strony: 31-39
• Opis fizyczny: Bibliogr. 17 poz.

Twórcy

autor

Lalauze, R.

autor

Pijolat, C.

autor

Tournier, G.

autor

Breuil, B.

• Ecole Nationale Superieure des Mines de Saint-Etienne, Centre des Processus Industriels st Naturels 158 cours Fauriel - 42023 Saint-Etienne Cedex 2 , France