Imaging properties of As₄₀S₄₀Se₂₀ layers

• Autorzy: Stronski, A. V. , Vlcek, M.
• Języki publikacji: EN

Abstrakty

EN

Here we investigate image formation properties of As₄₀S₄₀Se₂₀ layers with regard to their application for gratings fabrication. The light-sensitive properties (photo- and thermally-induced structural changes) of layers have been studied using optical techniques, including Raman spectroscopy. The dissolution kinetics of as - evaporated and exposed layers in amine based etching solutions has been studied. Characteristics of holographic gratings obtained on the base of As₄₀S₄₀Se₂₀ layers are presented.

Słowa kluczowe

EN

As40S40Se20 layers; optical properties; Raman spectra; selective etching; holographic diffraction gratings

• Czasopismo: Opto-Electronics Review
• Rocznik: 2000
• Tom: Vol. 8, No. 3
• Strony: 263-267
• Opis fizyczny: Bibliogr. 15 poz.

Twórcy

autor

Stronski, A. V.

autor

Vlcek, M.

• Institute of Semiconductor Physics, NAS Ukraine, 41 Prospekt Nauki, 03028 Kiev, Ukraine,