High-resolution transmission electron microscopy of AlAs/GaAs/AlGaAs multilayer heterostructure

• Autorzy: Nishio, K. , Kątcki, J. , Shiojiri, M.
• Języki publikacji: EN

Abstrakty

EN

A multilayer heterostructure of GaAs/AlAs/GaAs/AlGaAs/GaAs, which was prepared by molecular beam epitaxy at the Institute of Electron Technolgy was analysed by high-resolution transmission electron microscpoy (HRTEM) with the aid of image simulation and image processing. In spite of specimen damage during ion-milling Tem specimen preparation, columns of Ga and As atoms in the GaAs and columns of Al and As atoms in the AlAs were positioned in the (110) HRTEM images. The average and the variance of the widths of AlAs, GaAs, and AlGaAs layers were estimated from a small-ange scattering image reconstructed from the HRTEM image.

• Czasopismo: Electron Technology
• Rocznik: 1999
• Tom: Vol. 32, No. 4
• Strony: 348-353
• Opis fizyczny: Bibliogr. 16 poz.

Twórcy

autor

Nishio, K.

autor

Kątcki, J.

autor

Shiojiri, M.

• Kyoto Institute of Technology, Matsugasaki, Kyoto 606-8585, Japan