TEM study of the formation of defects in AlGaAs/GaAs and InGaAs/GaAs heterostructures

• Autorzy: Kątcki, J. , Ratajczak, J. , Phillipp, F. , Jin-Phillipp, N. Y. , Shiojiri, M. , Regiński, K. , Bugajski, M.
• Języki publikacji: EN

Abstrakty

EN

In this paper the formation of lattice defects in AlGaAs/GaAs and InGaAs/GaAs heterostructures is discussed. The heterostructures were grown by various techniques of epitaxy. Transmission electron microscopy (TEM) observations of the heterostructure showed that in AlGaAs/GaAs heterostructures the main reason for the formation of defects are local inhomogeneties but in InGaAs/GaAs heterostructures lattice misfit is responible for this process.

• Czasopismo: Electron Technology
• Rocznik: 1999
• Tom: Vol. 32, No. 4
• Strony: 343-347
• Opis fizyczny: Bibliogr. 9 poz.

Twórcy

autor

Kątcki, J.

autor

Ratajczak, J.

autor

Phillipp, F.

autor

Jin-Phillipp, N. Y.

autor

Shiojiri, M.

autor

Regiński, K.

autor

Bugajski, M.

• Institute of Electron Technology, al. Lotników 32/46, 02-668 Warszawa, Poland,