Surface passivation of Hg0.8Cd0.2Te grown by MBE

• Autorzy: Jeon, H. C. , Leem, J. H. , Ryu, Y. S. , Kang, C. K. , Kim, N. H. , Kang, T. W. , Kim, H. J. , Kim, D. Y. , Han, M. S.
• Języki publikacji: EN

Abstrakty

EN

We have investigated on the surface passivation of HgCdTe with various surface treatment method; chemical oxidation, photochemical oxidation, and sulfur treatment. The density of fast state, slow state and fixed charge are analyzed by C-V method. We confirm that the sulfur treatment is the best surface passivation condition showing low density of the fast states and the fixed charge.

Słowa kluczowe

EN

MBE growth; HgCdTe MIS structure; passivation

• Czasopismo: Opto-Electronics Review
• Rocznik: 1999
• Tom: Vol. 7, No. 4
• Strony: 357-360
• Opis fizyczny: Bibliogr. 13 poz.

Twórcy

autor

Jeon, H. C.

autor

Leem, J. H.

autor

Ryu, Y. S.

autor

Kang, C. K.

autor

Kim, N. H.

autor

Kang, T. W.

autor

Kim, H. J.

autor

Kim, D. Y.

autor

Han, M. S.

• Department of Physics, Dongguk University, Seoul 100-715, Korea,