Novel electron mobility model for n-HgCdTe

• Autorzy: Yoo, S. D. , Ko, B. G. , Lee, G. S. , Park, J. G. , Kwack, K. D.
• Języki publikacji: EN

Abstrakty

EN

In the conventional simulations for HgCdTe device, the empirical mobility model is used which lacks in generality. Especially, the field dependent mobility is found to be wrong by comparing Monte Carlo results. The semi - empirical electron mobility model for the simulator is proposed in this paper. Low field mobility consists of two terms related to ionised impurity and phonon scattering. It is calculated by using the relaxation time approximation, which gives the information on the dominant factors affecting the mobility. The ionised impurity mobility model is modified based on Brooks - Herring model to include the degeneracy effect and overlap integral. For field dependent mobility, a new formula is proposed to take into account features of the dominant scattering mechanism such as nonparabolic relation between energy and wave function at high field. Final formula is accomplished by introducting fitting parameters extracted from Monte Carlo simulation results. This new model retains more physical meaning than conventional model.

Słowa kluczowe

EN

HgCdTe; electron mobility; semi-empirical mobility model; field dependent mobility; relaxation time approximation

• Czasopismo: Opto-Electronics Review
• Rocznik: 1999
• Tom: Vol. 7, No. 4
• Strony: 339-345
• Opis fizyczny: Bibliogr. 12 poz.

Twórcy

autor

Yoo, S. D.

autor

Ko, B. G.

autor

Lee, G. S.

autor

Park, J. G.

autor

Kwack, K. D.

• Advanced Semiconductor Material and Device Development Centre, Hanyang University, Seoul 133-791, Korea,