Novel InTlSb alloy for uncooled long : wavelength infrared photodetectors

• Autorzy: Lee, J. J. , Kim, J. D. , Razeghi, M.
• Języki publikacji: EN

Abstrakty

EN

In this paper, we report on the growth and characterization of novel InTlSb alloys for uncooled long-wavelength infrared photodetector applications. The InTlSb epilayers were grown on InSb and GaAs substrates by low-pressure metalorganic chemical vapor deposition. The incorporation of Tl into InSb was investigated in detail with Auger electron spectroscopy, high-resolution x-ray diffraction, transmission, absorption, photoresponse measurements, and Hall effect measurements. We also demonstrate the photodetectors fabricated from the grown InTlSb alloys. Photoresponse of InTlSb photodetectors is observed up to 11 µm at room temperature. The maximum responsivity of an In₀.₉₆Tl₀.₀₄Sb photodetector is about 6,64 V/W at 77 K, corresponding to a Johnson noise limited detectivity of 7,64 x 10⁸ cm Hz¹/² W⁻¹. The carrier lifetime in InTlSb photodetectors derived from the stationary photoconductivity is 10-50 ns at 77 K. The present results showed the feasibility of using InTlSb alloys for the uncooled infrared photodetector applications.

Słowa kluczowe

EN

InTlSb photodetectors; uncooled infrared detectors; photoconductors

• Czasopismo: Opto-Electronics Review
• Rocznik: 1999
• Tom: Vol. 7, No. 1
• Strony: 19-28
• Opis fizyczny: Bibliogr. 39 poz.

Twórcy

autor

Lee, J. J.

autor

Kim, J. D.

autor

Razeghi, M.

• Center for Quantum Devices, Department of Electrical and Computer Engineering, Northwestern University, Ewanston, Illinois 60208, USA