Thermal bonding and thinning of silicon wafers

• Autorzy: Piątkowski, B. , Zabierowski, P.
• Konferencja: Symposium "Diagnostic and Yield : SOI-Materials, Devices and Characterization" (4 ; 22-24.04.1998 ; Warsaw, Poland)
• Języki publikacji: EN

Abstrakty

EN

Technique utilizing of silicon wafers wee investigated. In this method wafers with hydrophilic surfaces or hydrophobic surfaces were contacted face to face and heating at temperatures up to 110°C. Czochralski-grown, n-type, 5 ÷ 15 Ω ⋅ cm, <100> silicon wafers were used in experiments. The mechanical strenght of interfaces formed by wafers bomding were investigated and bubbles in the bonded interface are detected by an infrared imaging system. The mechanical and chemical thinning of the top wafer to the desired thickness were investigated.

• Czasopismo: Electron Technology
• Rocznik: 1999
• Tom: Vol. 32, No. 1/2
• Strony: 137-137

Twórcy

autor

Piątkowski, B.

autor

Zabierowski, P.

• Institute of Electronic Materials Technology, ul Wólczyńska 133, 00-919 Warszawa, Poland