A quantum factor correction for modelling the C-V characteristics if the MOS-SOI structure

• Autorzy: Badri, M. , Ikraiam, F. A. , Majkusiak, B. , Beck, R. B.
• Konferencja: Symposium "Diagnostic and Yield : SOI-Materials, Devices and Characterization" (4 ; 22-24.04.1998 ; Warsaw, Poland)
• Języki publikacji: EN

Abstrakty

A quantum correction factor applying to the MOS-SOI system has been adapted from previous works and modified for the MOS-SOI systems to take into account the quantum mechanical correction for the energy quantization of carriers in modelling the C-V characteristics of these structures.

• Czasopismo: Electron Technology
• Rocznik: 1999
• Tom: Vol. 32, No. 1/2
• Strony: 130-132
• Opis fizyczny: Bibliogr. 2 poz.

Twórcy

autor

Badri, M.

autor

Ikraiam, F. A.

autor

Majkusiak, B.

autor

Beck, R. B.

• Institute of Microelectronics and Optoelectronics, Warsaw University of Technology, ul. Koszykowa 75, 00-662 Warszawa, Poland