Modelling of the effective mobility versus effective electric field in the GAA SOI transistor

• Autorzy: Walczak, J. , Majkusiak, B. , Janik, T.
• Konferencja: Symposium "Diagnostic and Yield : SOI-Materials, Devices and Characterization" (4 ; 22-24.04.1998 ; Warsaw, Poland)
• Języki publikacji: EN

Abstrakty

EN

Analytical expressions describing effective electron mobility and effective transverse electric field in the Gate-All Around (GAA) SOI transistor are proposed as functions of silicon substrate thickness, inversion layer charge and averge distance of electrons from the surface.

• Czasopismo: Electron Technology
• Rocznik: 1999
• Tom: Vol. 32, No. 1/2
• Strony: 119-122
• Opis fizyczny: Bibliogr. 3 poz.

Twórcy

autor

Walczak, J.

autor

Majkusiak, B.

autor

Janik, T.

• Institute of Microelectronics and Optoelectronics, Warsaw University of Technology, ul. Koszykowa 75, 00-662 Warszawa, Poland