Determination of doping concentration and effective carrier lifetime in SOI structures from electrical measurements of gate controled diode

• Autorzy: Gibki, J. , Jakubowski, A. , Łukasiak, L. , Tomaszewski, D. , Korwin-Pawłowski, M.
• Konferencja: Symposium "Diagnostic and Yield : SOI-Materials, Devices and Characterization" (4 ; 22-24.04.1998 ; Warsaw, Poland)
• Języki publikacji: EN

Abstrakty

EN

Methods of determination of the doping concentration and effective minority of differnt layers in a partially depleted SOI structures from I-V and C-V measurements of gate diodes have been described.

• Czasopismo: Electron Technology
• Rocznik: 1999
• Tom: Vol. 32, No. 1/2
• Strony: 116-118
• Opis fizyczny: Bibliogr. 4 poz.

Twórcy

autor

Gibki, J.

autor

Jakubowski, A.

autor

Łukasiak, L.

autor

Tomaszewski, D.

autor

Korwin-Pawłowski, M.

• Institute of Microelectronics and Optoelectronics, Warsaw University of Technology, ul. Koszykowa 75, 00-662 Warszawa, Poland