Accurate SOI MOSFET characterization at microwave frequencies

• Autorzy: Raskin, J. P. , Dambrine, G. , Vanhoenacker, D.
• Konferencja: Symposium "Diagnostic and Yield : SOI-Materials, Devices and Characterization" (4 ; 22-24.04.1998 ; Warsaw, Poland)
• Języki publikacji: EN

Abstrakty

EN

The maturation of low cost SOI MOSFET technology in the microwave domain has brought about a need to develop specific characterization techniques. An original scheme is presented, which, by combining careful desigtn of probing and calibration structures, rigourous in situ calibration, and a new powerful direct extraction method, allows reliable identification of the parameters of the non-quasistatic small-signal model for MOSFET's. The extracted models is shown to be valid up to 40 GHz.

• Czasopismo: Electron Technology
• Rocznik: 1999
• Tom: Vol. 32, No. 1/2
• Strony: 72-80
• Opis fizyczny: Bibliogr. 22 poz.

Twórcy

autor

Raskin, J. P.

• The University of Michigan, 3239 EECS Building, Ann Arbor, MI 48109-2122, USA

autor

Dambrine, G.

autor

Vanhoenacker, D.