Physically based modelling of the double-gate SOI transistor with thin semiconductor film

• Autorzy: Majkusiak, B. , Janik, T.
• Konferencja: Symposium "Diagnostic and Yield : SOI-Materials, Devices and Characterization" (4 ; 22-24.04.1998 ; Warsaw, Poland)
• Języki publikacji: EN

Abstrakty

EN

The physically based modelling of the double-gate SOI transistor is addressed in reference to the electron concentration distribution, electron charge density, threshold voltage, electron effective mobility and drain current. Two approaches to the description of the semiconductor region are used - the "classical" model based on solution to the Poisson equation and the "quantum" model based on the self-consistent solution to the Schrodinger and Poisson equation system. A special attention is paid to the influence of the semiconductor film thickness on the D-G SOI MOSFET modelling. Comparison of results obtained from different models for various semiconductor film thicknesses is presented.

• Czasopismo: Electron Technology
• Rocznik: 1999
• Tom: Vol. 32, No. 1/2
• Strony: 29-38
• Opis fizyczny: Bibliogr. 28 poz.

Twórcy

autor

Majkusiak, B.

autor

Janik, T.

• Institute of Microelectronics and Optoelectronics, Warsaw University of Technology, ul. Koszykowa 75, 00-662 Warsaw, Poland,