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1998 | Vol. 6, No. 3 | 217-230
Tytuł artykułu

Investigation of InAsSb infrared photodetectors for near room temperature operation

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EN
Abstrakty
EN
Long-wavelength infrared (LWIR) photodetectors operating at near room temperature are highly desirable for a number of applications. Narrow bandgap semiconductors have been long researched for applications in the infrared photodetectors and much progress has beem made on the II-VI compounds. Recent rapid development in epitaxial thin film growth techniques made it possible to explore the more promising III-V material systems. In this article, we report the recent results on the near room temperature operation of III-V InAs₁-xSbx photodetectors. InAs₁-xSbx detector structures were grown on GaAs substrates by low-pressure metalorganic chemical vapor deposition (LP-MOCVD). The structural, optical, and electrical properties of this material were investigated in detail. Device modeling has been performed prior to the growth of detector structures. Photoconductive detectors with x=0.77 exhibited photoresponse up to µm at 300 K. Corresponding effective lifetime of ~ 0.14 ns and Johnson noise limited detectivity at 10.6um of 3.3 x10⁷ cm¹/² Hz /W have been obtained at 300 K. Because of many advantages of the photovoltaic devices, photovoltaic detectors have been also fabricated. A room-temperature photoresponse of up to 13 µm has been observed at 300 K with a x ~ 0.85 sample and R₀A product of ~ 10⁻⁵ Ω cm². These results showed the feasibility of using InAs₁-xSbx for uncooled photodetector applications as an alternative to Hg₁-xCdxTe.
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217-230
Opis fizyczny
Bibliogr. 39 poz.
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autor
  • Center for Centrum Devices, Department of Electrical and Computer Engineering, Northwestern University, Evanston, IL 60208, USA
autor
  • Center for Centrum Devices, Department of Electrical and Computer Engineering, Northwestern University, Evanston, IL 60208, USA, razeghi@ece.nwu.edu
Bibliografia
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Bibliografia
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bwmeta1.element.baztech-article-BWA1-0001-0269
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