Photoresponse of GaN p-n junction and Schottky barrier ultraviolet photodetectors

• Autorzy: Małachowski, M. J. , Rogalski, A.
• Języki publikacji: EN

Abstrakty

EN

At present, the main effors in fabrication of UV photodetectors are directed to GaN Schottky barriers and p-n junction photodiodes. The future development of UV photodetectors will be dominated by complex band gap heterostructures using 3- dimensional gap and doping engineering. AlGaN exhibits extreme flexibility, it can be tailored for the optimised detection at important region of UV spectrum, and multicolor devices can be easily constructed. A study of GaN Schottky barriers (with a n-type material) and p-n junction photodiodes in ultraviolet range are carried out. Due to the fact that the built-in voltage of a Schottky diode is smaller than that of a p-n junction, the depletion region width is smaller than that of p-n junction. Special attention has been devoted to an analysis of the current responsivities of both types of detectors. Owing to relative simplicity in fabrication of Schottky barriers, they can be more promising than p-n junction detectors, especially in the case of low doping or/and thin front layer ensuring the entire depletion of the n-type layer.

• Czasopismo: Opto-Electronics Review
• Rocznik: 1998
• Tom: Vol. 6, No. 2
• Strony: 141-149
• Opis fizyczny: Bibliogr. 20 poz.

Twórcy

autor

Małachowski, M. J.

• Institute of Applied Physics, Military University of Technology, 2 Kaliskiego Str., 01-489 Warsaw, Poland

autor

Rogalski, A.

• Institute of Applied Physics, Military University of Technology, 2 Kaliskiego Str., 01-489 Warsaw, Poland,