Recent advances in Sb-based materials for uncooled infrared photodetectors

• Autorzy: Michel, E. , Razeghi, M.
• Języki publikacji: EN

Abstrakty

EN

In this paper, we review recent work on Sb-based materials for IR detector applications. The materials investigated in this work are InSb, AllInSb, and InAsSb grown by solid source molecular beam epitaxy (MBE). The photodiodes investigated are InSb p-i-n structures and InAs₁-x Sbx homojunction and heterojunction device structures grown on (100) and (111)B semi-insulating GaAs and Si substrates. The InAsSb was grown to result in a cutoff wavelength of ~ 8 µm which is useful for proximity fuze applications. Device performance is comparable to industry standard technologies such as HgCdTe and thermal detectors. The material parameters for device structures were investigated through theoretical calaculations based on fundamental mechanisms.

• Czasopismo: Opto-Electronics Review
• Rocznik: 1998
• Tom: Vol. 6, No. 1
• Strony: 11-23
• Opis fizyczny: Bibliogr. 65 poz.

Twórcy

autor

Michel, E.

autor

Razeghi, M.,

• Center for Quantum Devices, Dept. of Electrical and Computer Engineering Northwestern University, Evanston, IL 60208, USA,