PtSi Schottky-barrier infrared focal plane arrays

• Autorzy: Kimata, M. , Ueno, M. , Yagi, H. , Shiraishi, T. , Kawai, M. , Endo, K. , Kosasayama, Y. , Sone, T. , Ozeki, T. , Tsubouchi, N.
• Języki publikacji: EN

Abstrakty

EN

The focal plane array (FPA) technology based on the PtSi Schottky-barrier (SB) photoemissive detector is presented. Taking advantage of Si-compatible manufacturing processes and high responsivity uniformity, we have developed a series of 2-dimensional PtSi SB FPAs with array sizes from 256 x 256 to 1040 x 1040 elements for medium wavelength thermal imaging, and two spaceborne long linear FPAs with 4096-element x 4-band and 2100-element x 6-band for short wavelength remote sensing applications. Along with design and performance of the FPAs, this paper reports on the Charge Sweep Device readout architecture, which is a key technology for high performance 2-D FPAs. A high reliability and high planarity packaging technology for large FPAs is also described.

• Czasopismo: Opto-Electronics Review
• Rocznik: 1998
• Tom: Vol. 6, No. 1
• Strony: 1-10
• Opis fizyczny: Bibliogr. 26 poz.

Twórcy

autor

Kimata, M.

autor

Ueno, M.

autor

Yagi, H.

autor

Shiraishi, T.

autor

Kawai, M.

autor

Endo, K.

autor

Kosasayama, Y.

autor

Sone, T.

autor

Ozeki, T.

autor

Tsubouchi, N.

• Advanced Technology R&D Center, Mitsubishi Electric Corporation, 8-1-1, Tsukaguchi-Honmachi, Amagasaki City, Hyogo 661-8661, Japan,