Investigations of layered semiconductors using photoreflectance

• Autorzy: Kępińska, M. , Nowak, M. , Wilk, E.
• Konferencja: Seminar on Surface and Thin Film Structures (5 ; 23-26.09.1997 ; Ustroń, Poland)
• Języki publikacji: EN

Abstrakty

Crystalline GaSe was inwestigated using optical reflectance stimulated by additional illumination of the sample. The investigations were performed at room temperature wavelength from 400 nm to 1100 nm. The additional illumination was obtained using Ar laser radiation (ʎ=488 nm) chopped with different frequencies (up to 4 kHz). The obtained photoreflectance spectral characteristics were fitted wit the appropriate theoretical dependence to obtain critical energy of the investigated material. The obtained results have been compared with the litterature data as well as with the results of the performed standard investigations of optical transmittance, reflectance, photoconductivity and photoelectromagnetic effect.

• Czasopismo: Electron Technology
• Rocznik: 1998
• Tom: Vol. 31, No. 3/4
• Strony: 342-345
• Opis fizyczny: Bibliogr. 11 poz.

Twórcy

autor

Kępińska, M.

autor

Nowak, M.

autor

Wilk, E.

• Institute of Physics, Silesian Technical University, 40-019 Katowice, P.O.Box 221 ul. Krasińskiego 8, Poland,