Department of Fundamental Problems of Electronics / Department of Analysis of Semiconductor Nanostructures

• Autorzy: Świderski, J. , Kaniewska, M.
• Języki publikacji: EN

Słowa kluczowe

PL

Instytut Technologii Elektronowej; działalność naukowo-badawcza

EN

Institute of Electron Technology; scientific activity

• Czasopismo: Prace Instytutu Technologii Elektronowej
• Rocznik: 2007
• Tom: z. 1/2
• Strony: 173-196
• Opis fizyczny: Bibliogr. 58 poz., il., wykr.

Twórcy

autor

Świderski, J.

autor

Kaniewska, M.

• Institute of Electron Technology, Al. Lotników 32/46, 02-668 Warsaw, Poland,

Bibliografia

• [P1] AKHMETOV V. D., MISIUK A., BARCZ A., RICHTER A.: Pressure-Induced Transformations of Nitrogen Implanted into Silicon. phys. stat. sol. (a) 2006 vol. 203 p. 781-785.
• [P2] CANDELORI A., BARCZ A. ET AL.: Radiation-Hard Detectors for Very High Luminosity Colliders. Nucl. Instr. & Meth. in Phys. Res. A 2006 No. 560 p. 103-107.
• [P3] CIOSEK J., MISIUK A., SURMA B., SHCHENNIKOV V. V.: Influence of Enhanced Temperature and Pressure on Structural Transformations in Pre-Annealed Cz-Si. phys. stat. sol. (a) 2006 vol. 203 p. 2254-2259.
• [P4] CIOSEK J., RATAJCZAK J.: Influence of Temperature-Pressure Treatment on the Heavily Hydro- genated Silicon Surface. Appl. Surface Sci. 2006 vol. 252 p. 6115-6118.
• [P5] CIOSEK J., MISIUK A., BĄK-MISIUK J., SHALIMOV A., SURMA B., RATAJCZAK J., ZAVODINSKY V. G.: Heavily Hydrogenated Silicon Structure Modification by High Temperature Pressure Treatment. Surface Sci. (submitt. to publ.).
• [P6] ENGSTRÖM O., KANIEWSKA M.: Discovery of Classes Among Deep Level Centers in Gallium Arsenide. Mat. Sci. & Eng. in Phys. Res. B 2007 vol. 138 No. 1 p. 12-15.
• [P7] ENGSTRÖM O., EGHTEDARI A., KANIEWSKA M.: Electrical Characterization of InAs/GaAs Quantum Dots by Frequency Spectroscopy. Mat. Sci. & Eng. C 2007 vol. 27 No. 5-8 p. 936-940.
• [P8] JAKIEŁA R., BARCZ A., WEGNER E., ZAGOJSKI A.: Diffusion of Mn in Gallium Arsenide. J. Alloys a. Compounds 2006 vol. 423 p. 132–135.
• [P9] JAKIEŁA R., BARCZ A., DUMISZEWSKA E., JAGODA A.: Si Diffusion in Epitaxial GaN. phys. stat. sol. (c) 2006 vol. 3 p. 1416-1419.
• [P10] JUNG W., MISIUK A., YANG D.: Effect of High Pressure Annealing on Electrical Properties of Nitrogen and Germanium Doped Silicon. Nucl. Instr. & Meth. in Phys. Res. B 2006 vol. 253 p. 214-216.
• [P11] JUNG W., MISIUK A., FELBA J., MEGELA I. G., AZHNIUK YU., PRUJSZCZYK M.: Electrical Properties of Electron – Irradiated Cz-Si after Processing under Enhanced Hydrostatic Pressure. Elektrotechn. i Elektron. 2006 No. 5/6 p. 238-240
• [P12] JUNG W., PIOTROWSKI T., SIKORSKI S., LIPIŃSKI M., PANEK P., ZIĘBA P.: Study of Bulk Photovoltaic Effect and Photoconductivity Distributions in Multicrystal Silicon. phys. stat. sol. (c) 2007 vol. 4 No. 8 p. 2918-2922.
• [P13] JUNG W., ANTONOVA I. V., MISIUK A.: Study of Defects in Near-Surface Layer Created in Silicon by H2+ or He+ Implantation. Vacuum 2007 vol. 81 No. 10 p. 1047-1050.
• [P14] JUNG W., MISIUK A.: Influence of Pressure Annealing on Electrical Properties of Mn Implanted Silicon. Vacuum 2007 vol. 81 No. 10 p. 1408-1410.
• [P15] KAMIŃSKA E., PRZEŹDZIECKA E., PIOTROWSKA A., KOSSUTH J., DYNOWSKA E., DOBROWOLSKI W., BARCZ A., JAKIELA R., LUSAKOWSKA E., RATAJCZAK J.: ZnO-Based p-n Junction with p-type ZnO by ZnTe Oxidation. Mat. Res. Soc. Symp. Proc. 2006 vol. 89 p. EE08.
• [P16] KANIEWSKA M., ENGSTRÖM O., BARCZ A., PACHOLAK-CYBULSKA M.: Deep Levels Induced by InAs/GaAs Quantum Dots. Mat. Sci. & Eng. C 2006 vol. 26 p. 871-875.
• [P17] KANIEWSKA M., ENGSTRÖM O., BARCZ A., PACHOLAK-CYBULSKA M.: Electrical Activity of Deep Levels in the Presence of InAs/GaAs Quantum Dots. Mat. Sci. in Semicond. Process. 2006 vol. 9 p. 36-40.
• [P18] KANIEWSKA M., KRUKOVSKY S. I., ZAYACHUK D. M.: Deep Levels in Yb-Al Co-Doped GaAs Grown by Liquid Phase Epitaxy. Mat. Sci. in Semicond. Process. 2006 vol. 9 p. 366-370.
• [P19] KANIEWSKA M., ENGSTRÖM O.: Deep Traps at GaAs/GaAs Interface Grown by MBE-Interruption Growth Technique. Mat. Sci. & Eng. C 2007 vol. 27 No. 5-8 p. 1069-1073.
• [P20] KANIEWSKA M., ENGSTRÖM O., PACHOLAK-CYBULSKA M., SADEGHI M.: Characterization of Deep Levels at GaAs/GaAs and GaAs/InAs Interface Grown by MBE-Interrupted Growth Technique. phys. stat. sol. (a) 2007 vol. 204 No. 4 p. 987-991.
• [P21] LIPIŃSKI M., PIOTROWSKI T., PANEK P., CICHOSZEWSKI J.: Investigation of Influence of Gettering and Passivation on Lifetime Distribution in mc-Si. Proc. of 21st Europ. Photovoltaic Solar Energy Conf. a. Exhib. (PVSEC), Dresden, Germany, 4-8.09.2006, p. 1493-1496.
• [P22] MARCIAK-KOZŁOWSKA J., KOZŁOWSKI M.: On the Classical Quantum Transition in Heat Phenomena Induced by Continuous High Energy Laser Pulses. Condens. Matter, abstract, cond-mat/ 0604054, arXiv, 2006.
• [P23] MISIUK A., BARCZ A.: Pressure Mediated Emission of Hydrogen from Porous Layers in Silicon Co-Implanted with H2+ and He+. phys. stat. sol. (c) 2007 vol. 4 p. 2011-2015.
• [P24] MISIUK A., BARCZ A., CHOW L., SURMA B.,BĄK-MISIUK J., PRUJSZCZYK M.: Properties of Si:Cr Annealed under Enhanced Stress Conditions. Solid St. Phenomen. 2007 vol. 131-133 p. 375-380.
• [P25] MISIUK A., BARCZ A., SURMA B., BĄK-MISIUK J., WNUK A.: The Microstructure of Czochralski Silicon Co-Implanted with Helium and Hydrogen and Treated at High Temperature-Pressure. Crystal Res. a. Technol. (submit. to publ.).
• [P26] MISIUK A., CHOW L., BARCZ A., SURMA B., BĄK-MISIUK J., ROMANOWSKI P., OSINNIY W., SALMAN F., CHAI G., PRUJSZCZYK M., TROJAN A.: New Silicon-Based Materials for Spintronics Applications – Si:V and Si:Cr. Proc. Series: ESC Transactions: vol. 4 No. 3 p. 481-489.
• [P27] MISIUK A., LONDOS C. A., YANG D., MISIUK-BĄK J., JUNG W., PRUJSZCZYK M.: Stress Dependent Transformation of Interstitial Oxygen in Processed Ge-Doped Cz-Si. Nucl. Instr. & Meth. in Phys. Res. B 2006 vol. 253 p. 205-209.
• [P28] MISIUK A., SURMA B., BAK-MISIUK J., ANTONOVA I. V., JUNG W., PRUJSZCZYK M.: Stress-Induced Defects in Processed Electron – Irradiated Cz-Si. Elektrotechn. i Elektron. 2006 No. 5/6 p. 199-203.
• [P29] MISIUK A., SURMA B., BĄK-MISIUK J., BARCZ A., JUNG W., OSINNIY W., SHALIMOV A.: Effect of Pressure Annealing on Structure of Si:Mn. Mat. Sci. in Semicond. Process. 2006 vol. 9 p. 270-274.
• [P30] MISIUK A., SURMA B., BĄK-MISIUK J., LONDOS C. A., VAGOVIČ P., KOVACEVIČ I., PIVAČ B., JUNG W., PRUJSZCZYK M.: Revealing the Radiation - Induced Effects in Silicon by Processing at Enhanced Temperatures – Pressures. Radiation Measur. 2007 vol. 42 No. 4-5 p. 688-692.
• [P31] MOLL M., BARCZ A. ET AL.: Radiation Tolerant Semiconductor Sensors for Tracking Detectors. Nucl. Instr. & Meth. in Phys. Res. A 2006 vol. 565 p. 202-211.
• [P32] PIĄTEK Z., PLESKACZ W. A., KOŁODZIEJSKI J. F.: Transmission Line Pulsing Tester for On-Chip ESD Protection Testing. Proc. 13th Int. Conf. "Mixed Design of Integrated Circuits and Systems" MIXDES’2006, Gdynia, Poland, 22-24.06.2006.
• [P33] PIOTROWSKI T., JUNG W., SIKORSKI S.: Application of Non-Linear Theory to Analysis of Benedics Effect in Semiconductors. phys. stat. sol. (a) 2007 vol. 204 No. 4 p. 1063-1067.
• [P34] PIOTROWSKI T., PUŁTORAK J., SIKORSKI S.: Space Distribution of the p-n Junction Structure IR Radiation. Semicond. Sci. a. Technol. (submitt. to publ.).
• [P35] WIERZCHOWSKI W. K., MISIUK A., WIETESKA K., BĄK-MISIUK J., JUNG W., SHALIMOV A., GRAEFF W., PRUJSZCZYK M.: Defect Structure of Czochralski Silicon Co-Implanted with Helium and Hydrogen and Treated at High Temperature-Pressure. Semicond. Phys. a. Quantum Electron. (submit. to publ.).
• [C1] ANTONOVA I. V., JUNG W., MISIUK A.: Interaction Between Microcavites and Defects in Porous-Like Buried Layer Created by H2+ or He+ Implantation Into Silicon The 5th Int. Conf. "Porous Semiconductors Science and Technology" (PSST-2006). Stiges-Barcelona, Spain, 12-17.03.2006 (poster).
• [C2] CIOSEK J., BURZYŃSKA S., PROKOPIUK A., MAJOR B., MAJOR Ł., MINKAYEV M., PRZESŁAWSKI T., MRÓZ W.: Metastable Phase and Structural Transitions od Superthin Ti/Si and TiN/SiN Multilayers Deposited with ArF Excimer Layer System. 2006 E-MRS Fall Meet. Warsaw, Poland, 4-8.09.2006 (poster).
• [C3] ENGSTRÖM O., EGHTEDARI A., KANIEWSKA M.: Electrical Characterization of InAs/GaAs Quantum Dots by Frequency Spectroscopy. The E-MRS 2006 Spring Meet. (E-MRS - IUMRS - ICEM 06), Nice, France, 29.05-2.06.2006 (paper).
• [C4] JUNG W., PIOTROWSKI T., SIKORSKI S., LIPIŃSKI M., PANEK P., ZIĘBA P.: Study of Bulk Photovoltaic Effect and Photoconductivity Distributions in Multicrystal Silicon. Int. Conf. on Extended Defects in Semiconductors (EDS 2006). Halle/Saale, Germany, 17-22.09.2006 (poster).
• [C5] JUNG W., ANTONOVA I. V., MISIUK A.: Study of Defects in Near-Surface Layer Created in Silicon by H2+ or He+ Implantation. 6th Int. Conf. Ion Implantation and Other Applications of Ions and Electrons – ION 2006, Kazimierz Dolny, Poland, 26-29.06.2006 (poster).
• [C6] JUNG W., MISIUK A., YANG D.: Effect of High Pressure Annealing on Electrical Properties of Nitrogen and Germanium Doped Silicon. The E-MRS 2006 Spring Meet. (E-MRS - IUMRS - ICEM 06), Nice, France, 29.05-2.06.2006 (poster).
• [C7] JUNG W., MISIUK A.: Influence of Pressure Annealing on Electrical Properties of Mn Implanted Silicon. 6th Int. Conf. Ion Implantation and Other Applications of Ions and Electrons – ION 2006, Kazimierz Dolny, Poland, 26-29.06.2006 (poster).
• [C8] JUNG W., MISIUK A., FELBA J., MEGELA I. G., AZHNIUK YU., PRUJSZCZYK M.: Electrical Properties of Electron – Irradiated Cz-Si after Processing under Enhanced Hydrostatic Pressure. 8th Int. Conf. on Electron Beam Technologies (EBT). Varna, Bulgaria, 5-10.06.2006 (poster).
• [C9] KANIEWSKA M., ENGSTRÖM O.: Deep Traps at GaAs/GaAs Interface Grown by MBE-Interruption Growth Technique. The E-MRS 2006 Spring Meet. (E-MRS - IUMRS - ICEM 06), Nice, France, 29.05-2.06.2006 (poster).
• [C10] KANIEWSKA M., ENGSTRÖM O., PACHOLAK-CYBULSKA M., SADEGHI M.: Characterization of Deep Levels at GaAs/GaAs and GaAs/InAs Interface Grown by MBE-Interrupted Growth Technique. 8th Int. Workshop on Expert Evaluation & Control of Compound Semiconductor Materials & Technologies, Exmatec’06. Cadiz, Spain, 14-17.05.2006 (poster).
• [C11] KAMIŃSKA E., PIOTROWSKA A., PRZEŹDZIECKA E., KOSSUTH J., DYNOWSKA E., BARCZ A., JAKIELA R., DOBROWOLSKI W., I. PASTERNAK P. BOGUSŁAWSKI: P-Type Doping ZnO. XXXV Int. School on the Physica of Semiconducting Compounds, Jaszowiec, Poland, 17-23.06.2006 (inv. lect.).
• [C12] KAMIŃSKA E., PRZEŹDZIECKA E., PIOTROWSKA A., KOSSUTH J., BARCZ A., JAKIELA R., DYNOWSKA E., DOBROWOLSKI W., PASTERNAK I., KOWALCZYK E., BOGUSŁAWSKI P.: Transparent p-Type ZnO by Oxidation of Zn-Based Compounds. 1st Int. Symp. on Transparent Conducting Oxides, Hersonissos, Crete, Greece, 23-25.10.2006 (paper).
• [C13] LIPIŃSKI M., PIOTROWSKI T., PANEK P., CICHOSZEWSKI J.: Investigation of Influence of Gettering and Passivation on Lifetime Distribution in mc-Si. 21st Europ. Photovoltaic Solar Energy Conf. a. Exhib. (PVSEC), Dresden, Germany, 4-8.09.2006 (poster).
• [C14] MISIUK A., LONDOS C. A., YANG D., MISIUK-BĄK J., JUNG W., PRUJSZCZYK M.: Stress Dependent Transformation of Interstitial Oxygen in Processed Ge-Doped Cz-Si. The E-MRS 2006 Spring Meet. (E-MRS - IUMRS - ICEM 06), Nice, France, 29.05-2.06.2006 (poster).
• [C15] MISIUK A., BARCZ A.: Pressure Mediated Emission of Hydrogen from Porous Layers in Silicon Co-Implanted with H2+ and He+. 5th Int. Conf. on Porous Semiconductors – Science and Technology (PSST-2006). Stiges-Barcelona, Spain, 12-17.03.2006 (poster).
• [C16] MISIUK A., SURMA B., BAK-MISIUK J., ANTONOVA I. V., JUNG W., PRUJSZCZYK M.: Stress-Induced Defects in Processed Electron – Irradiated Cz-Si. 8th Int. Conf. on Electron Beam Technologies (EBT), Varna, Bulgaria, 5-10.06.2006 (paper).
• [C17] MISIUK A., CHOW L., BARCZ A., SURMA B., BĄK-MISIUK J., ROMANOWSKI P., OSINNIY W., SALMAN F., CHAI G., PRUJSZCZYK M., TROJAN A.: New Silicon-Based Materials for Spintronics Applications – Si:V and Si:Cr. Conf. "High Purity Silicon IX". Cancun, Mexico, 29.10-3.11.2006 (paper).
• [C18] MISIUK A., BARCZ A., CHOW L., OSINNIY W.: Structural and Magnetic Properties of Si:Cr Processed Under Enhanced Stress. 6th Int. Conf. Ion Implantation and other Applications of Ions and Electrons – ION 2006, Kazimierz Dolny, Poland, 26-29.06.2006 (paper).
• [C19] OSINNIY W., MISIUK A., SURMA B., BĄK-MISIUK J., BARCZ A., JUNG W., SZOT M., ŚWIĄTEK K., STORY T.: Magnetic Properties of Silicon Crystals Implanted with Manganese. XXXV Int. School on the Physics of Semiconducting Compounds. Jaszowiec, Poland, 17-23.06.2006 (poster).
• [C20] PIOTROWSKI T., JUNG W., SIKORSKI S.: Application of Non-Linear Theory to Analysis of Benedics Effect in Semiconductors. 8th Expert Evaluation & Control of Compound Semiconductor Materials & Technologies. 8th Int. Workshop on Expert Evaluation & Control of Compound Semiconductor Materials & Technologies, Exmatec’06. Cadiz, Spain, 14-17.05.2006 (poster).
• [C21] PRZEŹDZIECKA E., KAMIŃSKA E., PASTERNAK I., DYNOWSKA E., DOBROWOLSKI W., JAKIELA R., BARCZ A., KŁOPOTOWSKI Ł., KORONA K. P., KOSSUTH J.: Optical Properties of p-Type ZnO:(N, As, Sb). E-MRS Fall Meet., Warsaw, Poland, 4-8.09.2006 (paper).
• [PA1] MISIUK A., BARCZ A., PRUJSZCZYK M.: Hydrogen Emitter Based on Nanocrystalline Silicon Structure and Its Fabrication. Pat. Appl. No. P.379388 (in Polish).
• [PA2] PIOTROWSKI T., TWAROWSKI K.: A Method to Measure Resistivity of Semiconductors. Pat. RP No. 191 572 (in Polish).