Department of the MOS System Studies

• Autorzy: Przewłocki, H. M.
• Języki publikacji: EN

Słowa kluczowe

PL

Instytut Technologii Elektronowej; działalność naukowo-badawcza

EN

Institute of Electron Technology; scientific activity

• Czasopismo: Prace Instytutu Technologii Elektronowej
• Rocznik: 2007
• Tom: z. 1/2
• Strony: 151-172
• Opis fizyczny: Bibliogr. 38 poz., tab., wykr.

Twórcy

autor

Przewłocki, H. M.

• Institute of Electron Technology, Al. Lotników 32/46, 02-668 Warsaw, Poland,

Bibliografia

• [P1] BOROWICZ L., BOROWICZ P.: The Objective for Off-Axis Micro-Raman Scattering Study of Stress in MOS Structures. Opto-Electron. Rev. (submit. to publ.).
• [P2] ENGSTRÖM O., GUTT T., PRZEWŁOCKI H. M.: Energy Concepts Involved in MOS Characterization. J. of Telecommun. a. Inform. Technol. 2007 No. 2 p. 86-91.
• [P3] GUTT T.: Comparison of Dynamic Properties of Interface Traps in Silicon and Silicon Carbide. 29th Int. Convention MIPRO 2006 – Conf. on Microelectronics, Electronics and Electronic Technologies (MEET). Opatija, Croatia, 22-26.05.2006, p. 39-41.
• [P4] GUTT T., ENGSTRÖM O., PRZEWŁOCKI H. M.: Energy Distributions of Trap Capture Cross Sections in SiO2:Si and SiO2:SiC Interfaces with Regard to the Meyer-Neldel Rule. Proc. of the V Domestic Conf. on Electronics KKE’06. Darłówko, Poland, 12-14.06.2006, p. 313-318 (in Polish).
• [P5] PAPIS-POLAKOWSKA E., PIOTROWSKA A., KAMIŃSKA E., GOŁASZEWSKA-MALEC K., KRUSZKA R., PIOTROWSKI T. T., RZODKIEWICZ W., SZADE J., WINIARSKI A., WAWRO A.: Sulphur Passivation of GaSb, InGaAsSb and AlGaAsSb Surfaces. phys. stat. sol. (c) 2007 vol. 4 p. 1448-1453.
• [P6] PISKORSKI K., PRZEWŁOCKI H. M.: A Photoelectric Method to Determine Distributions of Flat-Band Voltage Local Values over the Gate Area of MOS Structures. Elektronika 2006 No. 11 p. 9-11, 41 (in Polish).
• [P7] PISKORSKI K., PRZEWŁOCKI H. M.: Investigation of Barrier Height Distributions over the Gate Area of Al-SiO2-Si Structures. J. of Telecommun. a. Inform. Technol. 2007 No. 3 p. 49-54.
• [P8] PISKORSKI K., PRZEWŁOCKI H. M.: Distribution of Potential Barrier Height Local Values at Al-SiO2 and Si-SiO2 Interfaces of the Metal-Oxide-Semiconductor (MOS) Structures. Bull. of Polish Acad. Sci. 2006 vol. 54 p. 461-468.
• [P9] PISKORSKI K., PRZEWŁOCKI H. M.: A Photoelectric Method to Determine Distributions of Flatband Voltage Local Values over the Gate Area of MOS Structures. Proc. of the V Domestic Conf. on Electronics KKE’06. Darłówko, Poland, 12-14.06.2006, p. 325-330 (in Polish).
• [P10] PISKORSKI K., PRZEWŁOCKI H. M.: A Photoelectric Method to Determine Distributions of Flatband Voltage Local Values over the Gate Area of MOS Structures. 29th Int. Convention MIPRO 2006 – Conf. on Microelectronics, Electronics and Electronic Technologies (MEET). Opatija, Croatia, 22-26.05.2006, p. 42-45.
• [P11] PRZEWŁOCKI H. M.: New Applications of Internal Photoemission to Determine Basic MOS System Parameters. Int. Workshop on NanoCMOS. Tokyo, Mishima, Japan, 25.01–3.02.2006. IEEE Electron Dev. Soc. 2006, p. 44-45.
• [P12] PRZEWŁOCKI H. M.: The New Generation of the Photoelectric Measurement Methods of MOS Structure Parameters. Proc. of the 13th Int. Conf. "Mixed Design of Integrated Circuits and Systems" MIXDES’2006, Gdynia, Poland, 22-24.06.2006, p. 43-47.
• [P13] PRZEWŁOCKI H. M., KUDŁA A., BOROWICZ L., GUTT T., LIS D., RZODKIEWICZ W., PISKORSKI K., LEŚKO M., BRZEZIŃSKA D., SAWICKI Z.: Department of the MOS System Studies. [In] Annual Report ITE 2005. Warsaw, March 2006, p. 167-185 (in Polish).
• [P14] PRZEWŁOCKI H. M., KUDŁA A., BOROWICZ L., GUTT T., RZODKIEWICZ W., PISKORSKI K., LEŚKO M., BRZEZIŃSKA D., SAWICKI Z.: Department of the MOS System Studies. [In] Institute of Electron Technology. Scientific Activity 2005. Prace ITE 2006 No. 2 p. 185-202.
• [P15] RZODKIEWICZ W., BOROWICZ L.: Ellipsometric Investigation of the SiO2 Refractive Index and Thickness in the Neighborhood of Gate in MOS Structures. J. Optics A (submit. to publ.).
• [P16] RZODKIEWICZ W., BOROWICZ P., BOROWICZ L., KUDŁA A.: Investigations of the Local Values of SiO2 Thickness and Refractive Index in the Vicinity of Gate in MOS Structures. Application Oriented Woollam Ellipsometry Sem. Darmstadt, Germany, 24-25.10.2006. ftp://web240f2:useful [e-mail].
• [P17] RZODKIEWICZ W., BOROWICZ L., PISKORSKI K.: Application of Ellipsometric and Interference Methods in MOS Structures Investigations. Int. Conf. on Nanoscience and Technology. Basel, Switzerland, 30.07-4.08.2006, J. Phys. Conf. Ser. (JPCS), p. 375.
• [P18] RZODKIEWICZ W., KUDŁA A., BOROWICZ L.: Ellipsometric Investigations of the Local Values of SiO2 Refractive Index in the Neighborhood of Aluminum Gate. 4th Workshop Ellipsometry. Berlin, Germany, 20-22.02.2006 (CD ROM).
• [P19] RZODKIEWICZ W., PANAS A.: Ellipsometric and Raman Spectroscopy Studies of Compaction and Decompaction of Si-SiO2 Systems. J. of Telecommun. a. Inform. Technol. 2007 No. 3 p. 44-48.
• [P20] WIĘCŁAW-SOLNY L., KUDŁA A., MROWIEC-BIAŁOŃ J., JARZĘBSKI A. B.: Ellipsometric Study of Porosity Distribution in Hybrid Silica-Based Sol-Gel Films. Studies in Surface Science and Catalysis 160. Elsevier 2007, p. 463-469.
• [C1] ENGSTRÖM O., GUTT T., PRZEWŁOCKI H. M.: Energy Concepts Involved in MOS Characterization. 7th Symp. Diagnostics & Yield, Advanced Silicon Devices and Technologies for ULSI Era. Warsaw, Poland, 25-28.06.2006 (inv. lect.).
• [C2] GUTT T.: Comparison of Dynamic Properties of Interface Traps in Silicon and Silicon Carbide. 29th Int. Convention MIPRO 2006 – Conf. on Microelectronics, Electronics and Electronic Technologies (MEET). Opatija, Croatia, 22-26.05.2006 (paper).
• [C3] GUTT T., ENGSTRÖM O., PRZEWŁOCKI H. M.: Energy Distributions of Trap Capture Cross Sections in SiO2:Si and SiO2:SiC Interfaces with Regard to the Meyer-Neldel Rule. V Domestic Conf. on Electronics KKE’06. Darłówko, Poland, 12-14.06.2006 (paper, in Polish).
• [C4] GUTT T., ENGSTROM O., PRZEWŁOCKI H. M.: Energy Distributions of Trap Capture Cross Sections in SiO2:Si and SiO2:SiC Interfaces with Regard to the Meyer-Neldel Rule. 7th Symp. Diagnostics & Yield, Advanced Silicon Devices and Technologies for ULSI Era. Warsaw, Poland, 25-28.06.2006 (poster).
• [C5] KWIETNIEWSKI N., FIREK P., WERBOWY A., RZODKIEWICZ W., OLSZYNA A., SZMIDT J.: Investigation of Electrophysical Properties of Plasma Produced Thin BaTiO3 Films. Vacuum and Plasma Surface Engineering. Liberec-Hejnice, Czech Republic, 26-27.10.2006 (poster).
• [C6] KWIETNIEWSKI N., RZODKIEWICZ W., FIREK P., WERBOWY A., OLSZYNA A.: Investigation of the Optical Properties BaTiO3 Ferroelectrics Thin Films by Spectroscopic Ellipsometry. 7th Symp. Diagnostics & Yield, Advanced Silicon Devices and Technologies for ULSI Era. Warsaw, Poland, 25-28.06.2006 (poster).
• [C7] PAPIS-POLAKOWSKA E., PIOTROWSKA A., KAMIŃSKA E., GOŁASZEWSKA K., KRUSZKA R., PIOTROWSKI T. T., RZODKIEWICZ W., SZADE J., WINIARSKI A., WAWRO A.: Sulphur Passivation of GaSb, InGaAsSb and AlGaAsSb Surfaces. 8th Int. Workshop on Expert Evaluation & Control of Compound Semiconductor Materials & Technologies, Exmatec’06. Cadiz, Spain, 14–17.05.2006 (commun.).
• [C8] PISKORSKI K., PRZEWŁOCKI H. M.: A Photoelectric Method to Determine Distributions of Flatband Voltage Local Values over the Gate Area of MOS Structure. 29th Int. Convention MIPRO 2006 – Conf. on Microelectronics, Electronics and Electronic Technologies (MEET). Opatija, Croatia, 22-26.05.2006 (paper).
• [C9] PISKORSKI K., PRZEWŁOCKI H. M.: Distribution of Potential Barrier Height Local Values at Al-SiO2 and Si-SiO2 Interfaces of the Metal-Oxide-Semiconductor (MOS) Structures. V Domestic Conf. on Electronics KKE’06. Darłówko, Poland, 12-14.06.2006 (paper, in Polish).
• [C10] PISKORSKI K., PRZEWŁOCKI H. M.: Distribution of Potential Barrier Height Local Values at Al-SiO2 and Si-SiO2 Interfaces of the Metal-Oxide-Semiconductor (MOS) Structures. 7th Symp. Diagnostics & Yield, Advanced Silicon Devices and Technologies for ULSI Era. Warsaw, Poland, 25-28.06.2006 (poster).
• [C11] PRZEWŁOCKI H. M.: New Applications of Internal Photoemission to Determine Basic MOS System Parameters. Int. Workshop on NanoCMOS. Tokyo, Mishima, Japan, 25.01-13.02.2006 (inv. lecture).
• [C12] PRZEWŁOCKI H. M.: Problems in C(V) and G(V) Characterization of MOS Structures. SOITEC Sem. Grenoble, France, 4-5.05.2006 (inv. lecture).
• [C13] PRZEWŁOCKI H. M.: The New Generation of the Photoelectric Measurement Methods of MOS Structure Parameters. 13th Int. Conf. "Mixed Design of Integrated Circuits and Systems" MIXDES’2006, Gdynia, Poland, 22-24.06.2006 (inv. lecture).
• [C14] RZODKIEWICZ W., BOROWICZ L., PISKORSKI K.: Application of Ellipsometric and Interference Methods in MOS Structures Investigations. Int. Conf. on Nanoscience and Technology. Basel, Switzerland, 30.07-4.08.2006 (poster).
• [C15] RZODKIEWICZ W., BOROWICZ L.: Ellipsometric Investigation of the SiO2 Refractive Index and Thickness in the Neighborhood of Gate in MOS Structures. 4th Int. Conf. on Optics and Photonics 2006 - Photon’06. Manchester, Great Britain, 4-7.09.2006 (poster).
• [C16] RZODKIEWICZ W., BOROWICZ P., BOROWICZ L., KUDŁA A.: Investigations of the Local Values of SiO2 Thickness and Refractive Index in the Vicinity of Gate in MOS Structures. Application Oriented Woollam Ellipsometry Sem. Darmstadt, Germany, 24–25.10.2006. ftp://web240f2:useful [e-mail].
• [C17] RZODKIEWICZ W., KUDŁA A., BOROWICZ L.: Ellipsometric Investigations of the Local Values of SiO2 Refractive Index in the Neighborhood of Aluminum Gate. 4th Workshop Ellipsometry. Berlin, Germany, 20-22.02.2006 (poster).
• [C18] RZODKIEWICZ W., PANAS A.: Ellipsometric and Raman Spectroscopy Studies of Compaction and Decompaction of Si-SiO2 Systems. 7th Symp. Diagnostics & Yield, Advanced Silicon Devices and Technologies for ULSI Era. Warsaw, Poland, 25-28.2006 (poster).