Department of Semiconductor Processing for Photonics

• Autorzy: Piotrowska, A.
• Języki publikacji: EN

Słowa kluczowe

PL

Instytut Technologii Elektronowej; działalność naukowo-badawcza

EN

Institute of Electron Technology; scientific activity

• Czasopismo: Prace Instytutu Technologii Elektronowej
• Rocznik: 2007
• Tom: z. 1/2
• Strony: 56-76
• Opis fizyczny: Bibliogr. 40 poz., rys., tab., wykr.

Twórcy

autor

Piotrowska, A.

• Institute of Electron Technology, Al. Lotników 32/46, 02-668 Warsaw, Poland,

Bibliografia

• [P1] GOŁASZEWSKA K., KAMIŃSKA E., PIOTROWSKA A., RUTKOWSKI J., KOWALCZYK E., KRUSZKA R., PAPIS E., BODZENTA J., KAŹMIERCZAK-BAŁATA A., PIOTROWSKI T. T., WAWRO A.: Mid-Infrared Transparent Contacts for GaSb-Based Photovoltaic Devices. Thin Solid Films (submit. to publ.).
• [P2] GOŁASZEWSKA K., KAMIŃSKA E., PIOTROWSKA A., RUTKOWSKI J., KOWALCZYK E., PAPIS E., KRUSZKA R., PIOTROWSKI T. T., WAWRO A.: Transparent Ohmic Contacts to GaSb/In(Al)GaAsSb Photovoltaic Cells. phys. stat. sol. (a) 2007 vol. 204 No. 4 p. 1051-1055.
• [P3] GRABECKI G., WRÓBEL J., ZAGRAJEK P., FRONC K., ALESZKIEWICZ M., DIETL T., PAPIS E., KAMIŃSKA E., PIOTROWSKA A., SPRINGHOLZ G., BAUER G.: PbTe – A New Medium for Quantum Ballistic Devices. Physica E 2006 vol. 34 No. 1-2 p. 560-563.
• [P4] GUZIEWICZ M., PIOTROWSKA A., KAMIŃSKA E., GRASZA K., DIDUSZKO R., STONERT A., TUROS A., SOCHACKI M., SZMIDT J.: Ta-Si-C Contacts to n-SiC for High Temperatures Devices: Mater. Sci. a. Eng. B 2006 vol. 135/3 p. 289-293.
• [P5] KAMIŃSKA E., PRZEŹDZIECKA E., PIOTROWSKA A., KOSSUT J., DYNOWSKA E., JAKIEŁA R., DOBROWOLSKI W., BOGUSŁAWSKI P., PASTERNAK I., ŁUSAKOWSKA E.: Towards Efficient p-Type Doping ZnO with Group-V Atoms: N Versus As and Sb. Proc. of the 28th Int. Conf. on the Physics of Semiconductors. Vienna, Austria, 24-28.07.2006 (CD ROM).
• [P6] KUCHUK A. V., KLADKO V. P., MACHULIN V. F., PIOTROWSKA A.: Technology and Comparative Investigation of Ternary W-TiN and Ta(Ti)-SiN Thin Film Diffusion Barriers. Mat. of 18th Int. Symp."Thin Films for Optics and Nano-Electronics" ISTFONE-18, 2006 vol. 2 p. 68-72.
• [P7] MAZINGUE T., ESCOUBAS L., SPALLUTO L., FLORY F., JACQUOUTON P., PERRONE A., KAMIŃSKA E., PIOTROWSKA A., MIHAILESCU I., ATANASOV P.: Optical Characterizations of ZnO, SnO2, and TiO2 Thin Films for Butane Detection. Appl. Opt. 2006 vol. 45 No. 7 p. 1425-1435.
• [P8] PAPIS-POLAKOWSKA E.: Surface Treatments of GaSb and Related Materials for the Processing of Mid-Infrared Semiconductor Devices. Electron Technol. Internet J. 2005/2006 vol. 37/38 p. 1-34. www.ite.waw.pl/etij
• [P9] PAPIS-POLAKOWSKA E., PIOTROWSKA A., KAMIŃSKA E., GOŁASZEWSKA-MALEC K., KRUSZKA R., PIOTROWSKI T. T., RZODKIEWICZ W., SZADE J., WINIARSKI A., WAWRO A.: Sulphur Passivation of GaSb, InGaAsSb and AlGaAsSb Surfaces. phys. stat. sol. (c) 2007 vol. 4 p. 1448-1453.
• [P10] PŁACZEK-POPKO E., NOWAK A., KARCZEWSKA G., WOJTOWICZ T., WIATER M., GUZIEWICZ M., GUMIENNY Z.: Investigation of the Quantum Confinement Effects in DcTe Dots by Electrical Measurements. Proc. of the 28th Int. Conf. on the Physics of Semiconductors. Vienna, Austria, 24-28.07.2006 (CD ROM).
• [P11] PRZEŹDZIECKA E., KAMIŃSKA E., KORONA K. P., DYNOWSKA E., DOBROWOLSKI W., JAKIEŁA R., PACUSKI W., KŁOPOTOWSKI L., KOSSUT J.: Optical Properties of p-Type ZnO and ZnMnO Doped by N and/or As Acceptors. Proc. of the 28th Int. Conf. on the Physics of Semiconductors. Vienna, Austria, 24-28.07.2006 (CD ROM).
• [P12] PRZEŹDZIECKA E., KAMIŃSKA E., KIECANA M., SAWICKI M., KŁOPOTOWSKI Ł., PACUSKI W., KOSSUT J.: Magneto-Optical Properties of the Diluted Magnetic Semiconductor p-Type ZnMnO. Solid St. Commun. 2006 vol. 139 p. 541-544.
• [C1] GOŁASZEWSKA K., KAMIŃSKA E., PIOTROWSKA A., RUTKOWSKI J., KOWALCZYK E., KRUSZKA R., PAPIS E., BODZENTA J., KAŹMIERCZAK-BAŁATA A., PIOTROWSKI T. T., WAWRO A.: Mid-Infrared Transparent Contacts for GaSb-Based Photovoltaic Devices. 1st Int. Symp. on Transparent Conducting Oxides. Crete, Greece, 23-25.10.2006 (poster).
• [C2] GOŁASZEWSKA K., KAMIŃSKA E., PIOTROWSKA A., RUTKOWSKI J., KOWALCZYK E., PAPIS E., KRUSZKA R., PIOTROWSKI T. T., WAWRO A.: Transparent Ohmic Contacts to GaSb/In(Al)GaAsSb Photovoltaic Cellposter 8th Int. Workshop on Expert Evaluation & Control of Compound Semiconductor Materials & Technologies, Exmatec’06. Cadiz, Spain, 14-17.05.2006 (poster).
• [C3] GRABECKI G., WRÓBEL J., FRONC K., ALESZKIEWICZ M., DIETL T., PAPIS E., KAMIŃSKA E., PIOTROWSKA A., SPRINGHOLZ G., BAUER G.: Quantum Ballistic Phenomena in Hybrid Nanostructures of Paraelectric PbTe. XXXV Int. Schol on Physics of Semiconducting Compounds. Jaszowiec, Poland, 17-23.06.2006 (commun.).
• [C4] GRABECKI G., WRÓBEL J., ZAGRAJEK P., FRONC K., ALESZKIEWICZ M., DIETL T., PAPIS E., KAMIŃSKA E., PIOTROWSKA A., SPRINGHOLZ G., BAUER G.: Quantum Nanostructures of Paraelectric PbTe. 14th Int. Winterschool on New Developments in Solid State Physics, Charges Spins in Nanostructures: Basics and Devices. Salzburg, Austria, 13-17.02.2006 (inv. lect.).
• [C5] GUZIEWICZ E., KOPALKO K., DYNOWSKA E., ŁUSAKOWSKA E., GODLEWSKI M. M., GUZIEWICZ M., PHILLIPS M. R., GODLEWSKI M.: White Light Emission from ZnSe Films Grown on a GaAs Substrate by Atomic Layer Epitaxy. Baltic Conf. on Atomic Layer Deposition. Oslo, Norway, 19-20.06.2006 (paper).
• [C6] GUZIEWICZ M., PIOTROWSKA A., KAMIŃSKA E., GRASZA K., DIDUSZKO R., STONERT A., TUROS A., SOCHACKI M., SZMIDT J.: Ta-Si-C Contacts to n-SiC for High Temperatures Devices. The E-MRS 2006 Spring Meet. (E-MRS - IUMRS - ICEM 06), Nice, France, 29.05-2.06.2006 (poster).
• [C7] KAMIŃSKA E., PIOTROWSKA A., PRZEŹDZIECKA E., KOSSUT J., BARCZ A., JAKIELA R., DYNOWSKA E., DOBROWOLSKI W., PASTERNAK I., KOWALCZYK E., BOGUSLAWSKI P.: Transparent p-Type ZnO by Oxidation of Zn-Based Compounds. 1st Int. Symp. on Transparent Conducting Oxides. Creete, Greece, 23-25.10.2006 (commun.).
• [C8] KAMIŃSKA E., PIOTROWSKA A., SZCZĘSNY A.: Processing Issues for GaN-Based Devices Targeting High Temperature Application. Workshop on Gallium Nitride Devices: from Basics to Applications. 16th Int. Conf. MIKON’2006. Krakow, Poland, 22-26.05.2006 (inv. paper).
• [C9] KAMIŃSKA E., PIOTROWSKA A., SZCZĘSNY A., GUZIEWICZ M., GOŁASZEWSKA K., KRUSZKA R.: AlGaN/GaN HEMT Targeting High Temperature Applications. XXXV Int. Schol on Physics of Semiconducting Compounds. Jaszowiec, Poland, 17-23.06.2006 (poster).
• [C10] KAMIŃSKA E., PRZEŹDZIECKA E., PIOTROWSKA A., KOSSUT J., DYNOWSKA E., BARCZ A. JAKIEŁA R., DOBROWOLSKI W., PASTERNAK I., BOGUSŁAWSKI P.: p-Type Doping in ZnO. XXXV Int. School on the Physics of Semiconducting Compounds. Jaszowiec, Poland, 17-23.06.2006 (inv. paper).
• [C11] KAMIŃSKA E., PRZEŹDZIECKA E., PIOTROWSKA A., KOSSUT J., DYNOWSKA E., JAKIEŁA R., DOBROWOLSKI W., BOGUSŁAWSKI P., PASTERNAK I., ŁUSAKOWSKA E.: Towards Efficient p-Type Doping ZnO with Group-V Atoms: N Versus As and Sb. 28th Int. Conf. on the Physics of Semiconductors. Vienna, Austria, 24-28.07.2006 (poster).
• [C12] KAMIŃSKA E., PRZEŹDZIECKA E., PIOTROWSKA A., KOSSUT J., BOGUSŁAWSKI P., DOBROWOLSKI W., DYNOWSKA E., JAKIEŁA R., PASTERNAK I., ŁUSAKOWSKA E.: Properties of p-Type ZnO Grown by Oxidation of Zn-Group-V Compounds. MRS 2006 Fall Meet. Boston, USA, 26.11-1.12.2006 (commun.).
• [C13] KRUSZKA R., KAMIŃSKA E., PIOTROWSKA A., GOŁASZEWSKA K., GUZIEWICZ M., PASTERNAK I., ŁUSAKOWSKA E., ATHANASEKOS L., MADAMOPOULOS N., VAINOS N.: Patterning of Thin Oxide Layers for Optical Coating and Gas Sensors. 1st Int. Symp. on Transparent Conducting Oxides. Crete, Greece, 23-25.10.2006 (poster).
• [C14] KUCHUK A. V., KLADKO V. P., MACHULIN V. F., PIOTROWSKA A.: Technology and Comparative Investigation of Ternary W-TiN and Ta(Ti)-SiN Thin Film Diffusion Barriers. Kharkiv Nano-Technology Assembly. Kharkhov, Ukraine, 2-6.10.2006 (commun.).
• [C15] KUCHUK A. V., KLADKO V. P., PIOTROWSKA A.: Nanocomposite Ta-,Ti-SiN Thin Films: Synthesis, Properties, and Applications in High Temperature Electronics. Conf. "Trends in Nano-Technology – TNT 2006". Grenoble, France, 4-8.09.2006 (poster).
• [C16] KWIETNIEWSKI N., GUZIEWICZ M., PIOTROWSKA A., KAMIŃSKA E., GOŁASZEWSKA K., RATAJCZAK R., TUROS A., DIDUSZKO R.: Schottky Contacts to 6H-SiC using Ir and IrO2. 6th Europ. Conf. on Silicon Carbide and Related Materials, ECSCRM 2006. Newcastle, Great Britain, 3-7.09.2006 (poster).
• [C17] KWIETNIEWSKI N., RZODKIEWICZ W., FIREK P., WERBOWY A., OLSZYNA A.: Investigation of the Optical Properties BaTiO3 Ferroelectrics Thin Films by Spectroscopic Ellipsometry. 7th Symp. Diagnostics & Yield, Advanced Silicon Devices and Technologies for ULSI Era. Warsaw, Poland, 25-28.06.2006 (poster).
• [C18] NOWAK A., PLACZEK-POPKO E., WOJTOWICZ T., WIATER M., GUZIEWICZ M., GUMIENNY Z., KARCZEWSKI G.: Electrical Properties of CdTe Quantum Dots. XXXV Int. School on the Physics of Semiconducting Compounds. XXXV Int. Schol on Physics of Semiconducting Compounds. Jaszowiec, Poland, 17-23.06.2006 (poster).
• [C19] PAPIS-POLAKOWSKA E., PIOTROWSKA A., KAMIŃSKA E., GOŁASZEWSKA K., KRUSZKA R., PIOTROWSKI T. T., RZODKIEWICZ W., SZADE J., WINIARSKI A., WAWRO A.: Sulphur Passivation of GaSb, InGaAsSb and AlGaAsSb Surfaces. 8th Int. Workshop on Expert Evaluation & Control of Compound Semiconductor Materials & Technologies, Exmatec’06. Cadiz, Spain, 14-17.05.2006 (commun.).
• [C20] PŁACZEK-POPKO E., NOWAK A., KARCZEWSKA G., WOJTOWICZ T., WIATER M., GUZIEWICZ M., GUMIENNY Z.: Investigation of the Quantum Confinement Effects in DcTe Dots by Electrical Measurements. 28th Int. Conf. on the Physics of Semiconductors. Vienna, Austria, 24-28.07.2006 (poster).
• [C21] PRZEŹDZIECKA E., KAMIŃSKA E., KORONA K. P., DYNOWSKA E., DOBROWOLSKI W., PASTERNAK I., JAKIEŁA R., PACUSKI W., KŁOPOTOWSKI Ł., SAWICKI M., KIECANA M., KOSSUT J.: Optical Properties of p-Type ZnO and ZnMnO Doped by N and/or As Acceptors. XXXV Int. School on Physics of Semiconducting Compounds. Jaszowiec, Poland, 17-23.06.2006 (poster).
• [C22] PRZEŹDZIECKA E., KAMIŃSKA E., KORONA K. P., DYNOWSKA E., DOBROWOLSKI W., PASTERNAK I., JAKIEŁA R., PACUSKI W., KŁOPOTOWSKI Ł., MYCIELSKI A., KOSSUT J.: Optical Properties of p-Type ZnO and ZnMnO Doped by N and/or As Acceptors. 28th Int. Conf. on the Physics of Semiconductors. Vienna, Austria, 24-28.07.2006 (commun.).
• [C23] PRZEŹDZIECKA E., KAMIŃSKA E., KORONA K. P., DYNOWSKA E., DOBROWOLSKI W., PASTERNAK I., JAKIEŁA R., PACUSKI W., KŁOPOTOWSKI L., SAWICKI M., KIECANA M., KOSSUT J.: Optical Properties of p-Type ZnO Doped by N and/or As and Sb Acceptors. E-MRS 2006 Fall Meet. Warsaw, Poland, 4-6.09.2006 (poster).
• [C24] PRZEŹDZIECKA E., KAMIŃSKA E., PASTERNAK I., DYNOWSKA E., DOBROWOLSKI W. D, JAKIEŁA R., BARCZ A., KŁOPOTOWSKI Ł., KORONA K. P., KOSSUT J.: Optical Properties of p-Type ZnO: (N, As, Sb). E-MRS 2006 Fall Meet. Warsaw, Poland, 4-6.09.2006 (commun.).
• [PA1] GOŁASZEWSKA K., KAMIŃSKA E., PIOTROWSKA A., KRUSZKA R.: A Method to Fabricate Transparent Ohmic Contact for a Photovoltaic Device. Pat. Appl. No. P.379721 (in Polish).
• [PA2] KRUSZKA R., GUZIEWICZ M.: A Method of Plasma Etching of Mesas and Patterning of Semiconductor Structures Made from AIIIBV Compounds and Etching Mask. Pat. Appl. No. P.379780 (in Polish).
• [PA3] PAPIS-POLAKOWSKA E., PIOTROWSKA A., KAMIŃSKA E.: A Method to Obtain a Multi-Component Semiconductor Structure. Pat. Appl. No. P.380004 (in Polish).
• [PA4] PAPIS-POLAKOWSKA E., PIOTROWSKA A., KAMIŃSKA E., KRUSZKA R.: A Method to Fabricate a Detector on a GaSb Substrate. Pat. Appl. No. P.380005 (in Polish).