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Prace Instytutu Technologii Elektronowej

2007 | z. 1/2 | 27-42
Tytuł artykułu

Department of Physics and Technology of Low-Dimensional Structures

Autorzy
Bugajski, M.
Warianty tytułu
Języki publikacji
EN
Abstrakty
Słowa kluczowe
PL
EN
Wydawca

Czasopismo
Prace Instytutu Technologii Elektronowej
Rocznik
2007
Tom
z. 1/2
Strony
27-42
Opis fizyczny
Bibliogr. 83 poz., il., rys., wykr.
Twórcy
autor
Bugajski, M.
Bibliografia
  • [P1] BAK-MISIUK J., ORLIŃSKA K., KANIEWSKI J., SHALIMOV A., LUSAKOWSKA E., MISIUK A., MUSZALSKI J., WIERZCHOWSKI W., WIETESKA K., GRAEFF W.: Structural Characterization of InxGa1–xAs/InP Layers under Different Stresses. Appl. Surface Sci. 2006 vol. 253 p. 261-265.
  • [P2] BUGAJSKI M., PIWOŃSKI T., WAWER D., OCHALSKI T. J., DIECHEL E., UNGER P., CORBETT B.: Thermoreflectance Study of Facet Heating in Semiconductor Lasers. Mater. Sci. Semicond. Proc. 2006 vol. 9 No. 1-3 p.188-197.
  • [P3] CZERWIŃSKI A., PŁUSKA M., RATAJCZAK J., SZERLING A., KĄTCKI J.: Resistance and Sheet Resistance Measurements Using Electron Beam Induced Current. Appl. Phys. Lett. 2006 vol. 89 No. 24 p. 1-3.
  • [P4] GOLASZEWSKA K., KAMINSKA E., PIOTROWSKA A., RUTKOWSKI J., KOWALCZYK E., PAPIS E., KRUSZKA R., PIOTROWSKI T. T., WAWRO A.: Transparent Ohmic Contact to GaSb/In(Al)GaAsSb Photovoltaic Cells. phys. stat sol. (a) 2007 vol. 204 No. 4 p. 1051-1055.
  • [P5] GOLASZEWSKA K., KAMINSKA E., PIOTROWSKA A., RUTKOWSKI J., KOWALCZYK E., KRUSZKA R., PAPIS E., BODZENA J., KAZMIERCZAK-BALATA A., PIOTROWSKI T.T.: Mid-Infrared Transparent Electrodes for GaSb-Based Photovoltaic Devices. Thin Solid Films (submit. to publ.).
  • [P6] KOSIEL K., KOSMALA M., REGIŃSKI K., BUGAJSKI M.: MBE Technology of Saturable Bragg Reflectors for Mode Locking of Solid State Lasers. Proc. SPIE 2006 vol. 6599 (on line).
  • [P7] KOSIEL K., KOSMALA M., REGIŃSKI K., BUGAJSKI M.: Molecular Beam Epitaxy of Semiconductor Modules of Saturable Bragg Reflectors for Synchronization of Solid-State Laser Modes. Conf. Mat. of 8th Symp. on Laser Technology, Szczecin-Świnoujście, Poland, 25.09.2006, p. 23-285 (in Polish).
  • [P8] KOSIEL K., MUSZALSKI J., SZERLING A., BUGAJSKI M., JAKIEŁA R.: Increased Quantum Efficiency of InGaAs/GaA/Edge Laser – Optimization of Design and Fabrication. Conf. Mat. of 8th Symp. on Laser Technology, Szczecin-Świnoujście, Poland, 25.09.2006, p. 1-6 (in Polish).
  • [P9] KOWALCZYK E., ORNOCH L., MROZIEWICZ B.: Dynamics of Optical and Thermal Processes in Diode-Based Edge Lasers. Conf. Mat. of 8th Symp. on Laser Technology, Szczecin-Świnoujście, Poland, 25.09.2006, p. 87-905 (in Polish).
  • [P10] KOWALCZYK E., ORNOCH L., MROZIEWICZ B.: Wavelength Dynamics of Pulse Operated Diode Lasers. Proc. SPIE 2006 (submit. to publ.).
  • [P11] KOZIČ A., PAŠKEVIČ Č., SUIEDËLIS A., GRADAUSKAS J., ASMONTAS S., SZERLING A., WRZESIŃSKA H.: Asymmetrically Shaped Pseudomorphic Modulation Doped Structure for Microwave Detection. Acta Phys. Pol. A 2006 No. 6 p. 845-849.
  • [P12] KOZLOWSKA A., MALĄG A., POMRAENKE R., RENARD J., LIENAU Ch.: Near-Field Spectroscopic Analysis of the Mode Structure in High-Power Diode Lasers Based on a Double Barrier Separate Confinement Heterostructure. Proc. SPIE 2006 vol. 6368 p. 63680X-1-9.
  • [P13] KOZLOWSKA A., TOMM J. W., MALĄG A.: Microthermographic Investigations of Aging Processes in Diode Lasers. Proc. SPIE 2006 vol. 6368 p. 63680B-1-7.
  • [P14] MROZIEWICZ B., KOWALCZYK E., DOBRZANSKI L., RATAJCZAK J., LEWANDOWSKI S. J.: External Cavity Diode Lasers with E-Beam Written Silicon Diffraction Gratings. Optical a. Quantum Electron. 2007 vol. 39 No. 7 p. 585-595.
  • [P15] MROZIEWICZ B.: Revolution in Technology of LEDs – are the Craford’s and Haitz’s Laws Still in Power? Elektronika 2006 No. 3 p. 34-39 (in Polish).
  • [P16] MROZIEWICZ B.: Optical Interconnects for Electronic Systems of New Generations. Elektronika 2006 No. 6 p. 6-15 (in Polish).
  • [P17] MROZIEWICZ B.: Silicon Photonics – New Prospects. Elektronika 2006 No. 10 p. 35-44 (in Polish).
  • [P18] MROZIEWICZ B., KOWALCZYK E.: Semiconductor Lasers with External Optical Cavity (ECL) – Construction and Technology. Conf. Mat. of 8th Symp. on Laser Technology, Szczecin-Świnoujście, Poland, 25.09.2006, p. 121-1345 (in Polish).
  • [P19] MUSZALSKI J.: Semiconductor Microcavities and Their Device Applications. Elektronika 2006 No. 2 p. 40-44.
  • [P20] MUSZALSKI J., IWASZCZUK K., SZERLING A., MALĄG A.: Spectral Analysis of Multi-Segment Semiconductor Lasers. Conf. Mat. of 8th Symp. on Laser Technology, Szczecin-Świnoujście, Poland, 25.09.2006, p. 111-1155 (in Polish).
  • [P21] OCHALSKI T. J., PIERŚCIŃSKA D., MALĄG A.: Analysis of the Front Facet Temperature in Laser Diode with Non Absorbing Mirror. Mat. Res. Soc. Symp. Proc. 2006 vol. 891 p. EE03-26.
  • [P22] OCHALSKI T. J., PIERŚCIŃSKA D., PIERŚCIŃSKI K., MALĄG A., JASIK A., KOZŁOWSKA A., BUGAJSKI M.: Thermoreflectance Measurements of the Temperature Distributions in Laser Diodes with Non Injected Facet. Mat. Res. Soc. Symp. Proc. 2006 vol. 916 p. DD06-01.
  • [P23] OCHALSKI T. J., PIERŚCIŃSKA D., PIERŚCIŃSKI K., BUGAJSKI M., TOMM J. W., GRUNSKE T., KOZŁOWSKA A.: Complementary Thermoreflectance and Micro-Raman Analysis of Facet Temperatures of Diode Lasers. Appl. Phys. Lett. 2006 vol. 89 No. 7 p. 071104-3.
  • [P24] PETIT M., ROBERT-GOUMET C., BIDEUX L., GRUZZA B., MATOLIN V., ARABASZ S., ADAMOWICZ B., WAWER D., BUGAJSKI M.: Passivation of InP(100) Substrates: First Stages of Nitridation by Thin InN Surface Overlayers Studied by Electron Spectroscopies. Surf. Interface Anal. 2005 vol. 37 p. 615–620. Wiley InterScience (www.interscience.wiley.com). DOI: 10.1002/sia.2045.
  • [P25] PIERŚCIŃSKA D., PIERŚCIŃSKI K., BUGAJSKI M., TOMM J. W.: Thermal Properties of High Power Laser Bars Investigated by Spatially Resolved Thermoreflectance Spectroscopy. phys. stat. sol. (a) 2007 vol. 204 p. 422-429.
  • [P26] PIERŚCIŃSKA D., PIERŚCIŃSKI K., BUGAJSKI M., TOMM J. W.: Thermal Properties of High Power Laser Bars Investigated by Spatially Resolved Thermoreflectance Spectroscopy. Collection of papers from Therminic Workshop 2006.
  • [P27] PRZESŁAWSKI T.: Magnetotransport of the Two-Dimensional Electron Gas in In0.53Ga0.47As/In0.52Al0.48As Heterostructures Grown on (100)InP. Electron Technol. - Internet J. 2007 vol. 39 p. 1-3. www.ite.waw.pl/etij.
  • [P28] REGIŃSKA T., REGIŃSKI K.: Approximate Solution of a Cauchy Problem for the Helmholtz Equation. Inverse Problems 2006 No. 2 p. 975-989.
  • [P29] REGIŃSKA T., REGIŃSKI K.: A Cauchy Problem for the Helmholtz Equation: Application to Analysis of Light Propagation in Solids. Berichtsreihe des Mathematischen Seminars Christian- Albrechts-Universität der Kiel, 2006.
  • [P30] SZERLING A., KOSIEL K., WÓJCIK-JEDLIŃSKA A., PŁUSKA M., BUGAJSKI M.: Investigation of Oval Defects in (In)Ga(Al)As/GaAs Heterostructures by Spatially Resolved Photoluminescence and Micro-Cathodoluminescence. Mater. Sci. in Semicond. Process. 2006 vol. 9 No. 1-3 p. 25-30.
  • [P31] SZYMAŃSKI M., KOZŁOWSKA A., MALĄG A., SZERLING A.: Two-Dimensional Model of Heat Flow in Broad-Area Laser Diode Mounted to the Non-Ideal Heat Sink. J. Phys. D: Appl. Phys. 2007 vol. 40 No. 3 p. 924-929.
  • [P32] SZYMAŃSKI M.: Thermal Management in Semiconductor Lasers. An Analytical Approach. Electron Technol. - Internet J. 2007 vol. 39 p. 1-4. www.ite.waw.pl/etij.
  • [P33] SZYMAŃSKI M.: Two-Dimensional Model of Heat Flow in Broad-Area Laser Diode: Discussion of the Upper Boundary Condition. Microelectron. J. (submit. to publ.).
  • [P34] WAWER D., OCHALSKI T. J., PIERŚCIŃSKI K., SZYMAŃSKI M., BUGAJSKI M., PISKORSKI Ł., GUTOWSKI K., KOZŁOWSKA A., MALĄG A.: Analysis of Facet Heating in Semiconductor Lasers. Proc. SPIE 2007 p. 76-82.
  • [P35] WÓJCIK-JEDLIŃSKA A., BUGAJSKI M.: The Role of Photoluminescence Excitation Spectroscopy in Investigation of Quantum Cascade Laser Properties. Electron Technol. - Internet J. 2005/2006 vol. 37/38 p. 1-4. www.ite.waw.pl/etij.
  • [P36] WOLKENBERG A., PRZESLAWSKI T., KANIEWSKI J., KOWALCZYK E., REGIŃSKI K.: Conductivity Analysis of n-GaAs Molecular Beam Epitaxial Layers Using Multicarrier Fitting. J. Appl. Phys. 2006 vol. 99 p. 093708.
  • [P37] WOLKENBERG A., PRZESŁAWSKI T., KANIEWSKI J., KOWALCZYK E.: The Comparison of Conductivity Mobility Spectrum Using Multi-Carrier Fitting in InAs, InGaAs and GaAs MBE Epi-Layers. J. Appl. Phys. (submit. to publ.).
  • [P38] WOLKENBERG A., PRZESŁAWSKI T., KANIEWSKI J., KOWALCZYK E.: Mean Free Path and Mott Transition in InAs, In0.57Ga0.47As and GaAs MBE Epitaxial Layers. J. Appl. Phys. (submit. to publ.).
  • [P39] WOLKENBERG A., PRZESŁAWSKI T.: Magnetic Field Sensors Built from Slightly Crystallographicaly Mismatched Thin Films of In0.53Ga0.47As/InP(SI) Obtained by MBE and MOCVD. Sensors a. Actuators A 2006 vol. 126 No. 2 p. 292-299.
  • [C1] BUGAJSKI M., GRADKOWSKI K., PIERŚCIŃSKI K., KOSIEL K., OCHALSKI T., HAŁDAŚ G., WASIAK M.: Optical Characterisation of Quantum Cascade Laser Structures. 2nd Int. Workshop on Modulation Spectroscopy of Semiconductor Structures. Wrocław, Poland, 29.06-01.07.2006 (inv. paper).
  • [C2] BUGAJSKI M., MUSZALSKI J., KOSIEL K., OCHALSKI T., PIERŚCIŃSKI K., HAŁDAŚ G.: Physics and Technology of Low Dimensional Optoelectronics Structures and Devices Grown by MBE. Symp. on Photonics Technologies for Framework Programme 7. Wrocław, Poland, 12-14.10.2006 (inv. paper).
  • [C3] BUGAJSKI M., MUSZALSKI J., KOSIEL K., PIERŚCIŃSKI K., WÓJCIK-JEDLIŃSKA A., KALINOWSKI K., GRADKOWSKI K., HAŁDAŚ G., WASIAK M.: Growth and Characterization of Quantum Cascade Laser Structures. Semiconductor Optoelectronics. Int. Rev. Conf. Vienna, Austria, 26-29.11.2006 (inv. paper).
  • [C4] BUGAJSKI M., PIERŚCIŃSKA D., PIERŚCIŃSKI K., TOMM J. W.: Thermoreflectance Study of the Facet Heating in High Power Laser Bars. BRIGHT Workshop, Cambridge, Great Britain, 7.07.2006 (inv. paper).
  • [C5] CIOSEK J., BURDYŃSKA S., PROKOPIUK A., MAJOR B., MAJOR Ł., MINIKAYEV M., PRZESŁAWSKI T., MRÓZ W.: Metastable Phase and Structural Transitions of Superthin Ti/Si and TiN/SiN Multilayers Deposited with ArF Excimer Laser System. Symp. A, Nanostructured Composite Films: Synthesis Characterization Properties, and Applications. E-MRS Fall Meet. 2006, Warsaw, Poland, 4-8.09.2006 (poster).
  • [C6] CZERWIŃSKI A., PŁUSKA M., RATAJCZAK J., SZERLING A., KĄTCKI J.: Novel Quantitative Non-Linear EBIC Method for Characterization of Semiconductor Buried Layers, Paths and Nanostructures. 6th Japanese-Polish Joint Sem. on Materials Analysis (JPJSMA), Ateyama Kokusai, Toyama, Japan, 10-13.09.2006 (inv. paper).
  • [C7] GOLASZEWSKA K., KAMINSKA E., PIOTROWSKA A., RUTKOWSKI J., KOWALCZYK E., PAPIS E., KRUSZKA R., PIOTROWSKI T. T., WAWRO A.: Transparent Ohmic Contact to GaSb/In(Al)GaAsSb Photovoltaic Cells. 8th Int. Workshop on Expert Evaluation & Control of Compound Semiconductor Materials & Technologies, Exmatec’06. Cadiz, Spain, 14-17.05.2006 (poster).
  • [C8] GOLASZEWSKA K., KAMINSKA E., PIOTROWSKA A., RUTKOWSKI J., KOWALCZYK E., KRUSZKA R., PAPIS E., BODZENA J., KAZMIERCZAK-BALATA A., PIOTROWSKI T. T.: Mid-Infrared Transparent Electrodes for GaSb-Based Photovoltaic Devices. 1st Int. Symp. on Transparent Conducting Oxides, Hersonissos, Crete, Greece, 23-25.10.2006 (poster).
  • [C9] HAŁDAŚ G., BUGAJSKI M.: Description of Electronic States in Quantum Cascade Laser (QCL) by the Use of Green Function Method. XXXV Int. Schol on Physics of Semiconducting Compounds. Jaszowiec, Poland, 17-23.06.2006 (poster).
  • [C10] KAMINSKA E., PIOTROWSKA A., PRZEŹDZIECKA E., KOSSUT J., BARCZ A., JAKIELA R., DYNOWSKA E., DOBROWOLSKI W., PASTERNAK I., KOWALCZYK E., BOGUSLAWSKI P.: Transparent p-Type ZnO by Oxidation of Zn-Based Compounds. 1st Int. Symp. on Transparent Conducting Oxides, Hersonissos, Crete, Greece, 23-25.10.2006 (commun.).
  • [C11] KARBOWNIK P. I., SARZAŁA R. P.: Studies of the Feasibility of Fabrication of UV Semiconductor Lasers. Sci. Sem. "Nanostructures and Nanotechnologies". Bezmiechowa, Poland, 6-8.10.2006 (paper, in Polish).
  • [C12] KOSIEL K.: Molecular Beam Epitaxy of Semiconductor Lasers Structures. Sci. Sem. "Nanostructures and Nanotechnologies". Bezmiechowa, Poland, 6-8.10.2006 (paper).
  • [C13] KOSIEL K., KOSMALA M., REGIŃSKI K., BUGAJSKI M.: Molecular Beam Epitaxy of Semiconductor Modules of Saturable Bragg Reflectors for Synchronization of Solid-State Laser Modes. 8th Symp. on Laser Technology, Szczecin-Świnoujście, Poland, 25.09.2006 (poster, in Polish).
  • [C14] KOSIEL K., MUSZALSKI J., SZERLING A., BUGAJSKI M., JAKIEŁA R.: Increased Quantum Efficiency of InGaAs/GaA/Edge Laser – Optimization of Design and Fabrication. 8th Symp. on Laser Technology, Szczecin-Świnoujście, Poland, 25.09.2006 (poster, in Polish).
  • [C15] KOSIEL K., MUSZALSKI J., SZERLING A., BUGAJSKI M., JAKIEŁA R., WÓJCIK-JEDLIŃSKA A.: Increasing of Quantum Efficiency of InGaAs/GaAs GRINSCH Laser by Optimizing the Construction and Technology. Vacuum Based Science and Technology. Darmstadt, Germany, 10-13.10.2006 (commun.).
  • [C16] KOSMALA M., JASIK A.: Design, MBE Fabrication and Characterization of SESAM Structures for Nd:YAG Lasers. Sem. "Nanostructures and Nanotechnologies". Bezmiechowa, Poland, 6-8.10.2006 (commun., in Polish).
  • [C17] KOWALCZYK E., ORNOCH L., MROZIEWICZ B.: Dynamics of Optical and Thermal Processes in Diode-Based Edge Lasers. 8th Symp. on Laser Technology, Szczecin-Świnoujście, Poland, 25.09.2006 (poster, in Polish).
  • [C18] KOWALCZYK E., ORNOCH L., MROZIEWICZ B.: Dynamics of Optical and Thermal Processes in Diode-Based Edge Lasers. Sci. Sem. "Nanostructures and Nanotechnologies". Bezmiechowa, Poland, 6-8.10.2006 (commun., in Polish).
  • [C19] KOZIČ A., SUŽIEDËLIS A., PAŠKEVIČ Č., GRADAUSKAS J., AŠMONTAS S., SZERLING A., WRZESIŃSKA H., URBONAVIČIUS R.: Asymmetrically Shaped Pseudomorphic Modulation Doped Structure for Microwave Detection. XXXV Int. School on Physics of Semiconducting Compounds. Jaszowiec, Poland, 17-23.06.2006 (poster).
  • [C20] KOZLOWSKA A., MALĄG A., POMRAENKE R., RENARD J., LIENAU Ch.: Near-Field Spectroscopic Analysis of the Mode Structure in High-Power Diode Lasers Based on a Double Barrier Separate Confinement Heterostructure. Optics East Conf. "Optoelectronic Devices": Physics, Fabrication, and Application III. Boston, Mass. USA, 1-4.10.2006 (poster).
  • [C21] KOZLOWSKA A., TOMM J. W., MALĄG A.: Microthermographic Investigations of Aging Processes in Diode Lasers. Optics East Conf. "Optoelectronic Devices": Physics, Fabrication, and Application III. Boston, Mass. USA, 1-4.10.2006 (paper).
  • [C22] ŁYSKO J., LATECKI B., PIJANOWSKA D., NIKODEM M., WRZESIŃSKA H., PANAS A.: Measurements of the Dynamics of a Silicon, Thermo-Anemometric Sensor of Microflow. IX Sci. Conf. "Optoelectronic and Electronic Sensors" COE’2006. Kraków-Zakopane, 19-22.06.2006 (poster, in Polish).
  • [C23] MACHOWSKA-PODSIADŁO E., MĄCZKA M., BUGAJSKI M.: Efficient Method for 3-D Self-Consistent Solution of Poisson and Schroedinger Equations for Electrostatically Formed Quantum Dot. XXXV Int. School on Physics of Semiconducting Compounds. Jaszowiec, Poland, 17-23.06.2006 (poster).
  • [C24] MROZIEWICZ B., KOWALCZYK E.: Semiconductor Lasers with External Optical Cavity (ECL) Construction and Properties. 8th Symp. on Laser Technology, Szczecin-Świnoujście, Poland, 25.09.2006 (inv. paper, in Polish).
  • [C25] MUSZALSKI J., IWASZCZUK K., SZERLING A., MALĄG A.: Spectral Analysis of Multi-Segment Semiconductor Lasers. Conf. Mat. of 8th Symp. on Laser Technology, Szczecin-Świnoujście, Poland, 25.09.2006 (poster, in Polish).
  • [C26] OCHALSKI T. J., PIERŚCIŃSKA D., PIERŚCIŃSKI K., MALĄG A., JASIK A., KOZŁOWSKA A., BUGAJSKI M.: Thermoreflectance Measurements of the Temperature Distributions in Laser Diodes with Non Injected Facet. MRS Spring Meet. 2006. San Francisco, USA, 17-21.04.2006 (poster).
  • [C27] OCHALSKI T. J., PIERŚCIŃSKI K., KOSIEL K., BUGAJSKI M.: Differential Photoreflectance Studies of Quantum Cascade Laser Structures. 2nd Int. Workshop on Modulation Spectroscopy of Semiconductor Structures. Wrocław, Poland, 29.06-01.07.2006 (paper ).
  • [C28] PIERŚCIŃSKA D.: Application of Thermoreflectance Spectroscopy to Study Temperature Distributions in High-Power Lasers. Sci. Sem. "Nanostructures and Nanotechnologies". Bezmiechowa, Poland, 6-8.10.2006 (paper, in Polish).
  • [C29] PIERŚCIŃSKA D., BUGAJSKI M.: Application of Thermoreflectance Spectroscopy to Study Temperature Distribution at the Reflector Surface of Semiconductor Lasers. Conf. on Technical Sciences as a Source of Innovation, Wrocław, Poland, 19-21.05.2006 (paper, in Polish).
  • [C30] PIERŚCIŃSKA D., PIERŚCIŃSKI K., BUGAJSKI M., TOMM J. W.: Thermal Properties of High Power Laser Bars Investigated by Spatially Resolved Thermoreflectance Spectroscopy. 2nd Int. Workshop on Modulation Spectroscopy of Semiconductor Structures. Wrocław, Poland, 29.06-01.07.2006 (paper).
  • [C31] PIERŚCIŃSKA D., PIERŚCIŃSKI K., BUGAJSKI M., TOMM J. W.: Thermal Properties of High Power Laser Bars Investigated by Spatially Resolved Thermoreflectance Spectroscopy. 2nd Int. Workshop on Modulation Spectroscopy of Semiconductor Structures. Therminic Workshop 2006, Nice, France, 27-29.09.2006 (paper).
  • [C32] PIERŚCIŃSKA D., PIERŚCIŃSKI K., OCHALSKI T. J., BUGAJSKI M.: Thermal Management in High Power Semiconductor Lasers and Laser Bars. XXXV Int. Schol on Physics of Semiconducting Compounds. Jaszowiec, Poland, 17-23.06.2006 (poster).
  • [C33] PIERŚCIŃSKI K.: Optical Characterization of Semiconductor Structures. Sci. Sem. "Nanostructures and Nanotechnologies". Bezmiechowa, Poland, 6-8.10.2006 (paper, in Polish).
  • [C34] PIERŚCIŃSKI K., KOSIEL K., BUGAJSKI M.: Photoreflectance Study of Quantum Cascade Laser Structures. Sci. Sem. "Nanostructures and Nanotechnologies". Bezmiechowa, Poland, 6-8.10.2006 (paper).
  • [C35] PIERŚCIŃSKI K., OCHALSKI T. J., KOSIEL K., KALINOWSKI K., BUGAJSKI M.: Electroreflectance Study of Quantum Cascade Laser Structures. XXXV Int. Schol on Physics of Semiconducting Compounds. Jaszowiec, Poland, 17-23.06.2006 (poster).
  • [C36] PRUSZYŃSKA-KARBOWNIK E., WASIAK M.: Optical Amplification in Staircase Quantum Wells. Sci. Sem. "Nanostructures and Nanotechnologies". Bezmiechowa, Poland, 6-8.10.2006 (paper, in Polish).
  • [C37] PRUSZYŃSKA-KARBOWNIK E., WASIAK M., NAKWASKI W.: Theoretical Analysis of Red-Shift and Optical Gain in the Step-Like GaInNAs/GaNAs Quantum Well. 8th Int. Conf. on Transparent Optical Networks, ICTON 2006, Nottingham, Great Britain, 18-22.06.2006 (paper).
  • [C38] PRZESŁAWSKI T.: Magnetotransport of the Two-Dimensional Electron Gas in In0.53Ga0.47As/In0.52Al0.48As Heterostructures Grown on (100)InP. Sci. Sem. "Nanostructures and Nanotechnologies". Bezmiechowa, Poland, 6-8.10.2006 (inv. paper).
  • [C39] RZEPIEJEWSKA-MAŁYSKA K., WRZESIŃSKA H., MICHLER J., RYMUZA Z.: Nano-Scale Mechanical Phenomena in Superlattice Ultrathin Nitride Films Deposited on Silicon. PhD Symp. "Science is My Passion", EMPA, St. Gallen, Szwitzerland, 19.10.2006 (poster).
  • [C40] SZERLING A., KOSIEL K., PŁUSKA M., CZERWIŃSKI A., BUGAJSKI M.: Fabrication of Semiconductor Emitters of Infrared Radiation. Sci. Sem. "Nanostructures and Nanotechnologies". Bezmiechowa, Poland, 6-8.10.2006 (paper, in Polish)
  • [C41] SZYMAŃSKI M.: Selected Thermal Issues in Semiconductor Lasers. Sci. Sem. "Nanostructures and Nanotechnologies". Bezmiechowa, Poland, 6-8.10.2006 (lecture, in Polish).
  • [C42] WÓJCIK-JEDLIŃSKA A., BUGAJSKI M., KOSIEL K.: The Role of Photoluminescence Measurements in the Analysing of Properties of Quantum Cascade Laser Structures. Sci. Sem. "Nanostructures and Nanotechnologies". Bezmiechowa, Poland, 6-8.10.2006 (commun.).
  • [C43] WÓJCIK-JEDLIŃSKA A., GRADKOWSKI K., OCHALSKI T., KOSIEL K., BUGAJSKI M.: Photoluminescence Excitation Studies of Quantum Cascade Laser Structures. XXXV Int. School on Physics of Semiconducting Compounds. Jaszowiec, Poland, 17-23.06.2006 (poster).
  • [PA1] MROZIEWICZ B.: A Method to Measure Spatial Distribution of the Intensity of Semiconductor Laser Radiation. Pat. Appl. No. P.378970 (in Polish).
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