Department of the MOS System Studies

• Autorzy: Przewłocki, H. M.
• Języki publikacji: EN

Słowa kluczowe

PL

Instytut Technologii Elektronowej; działalność naukowo-badawcza

EN

Institute of Electron Technology; scientific activity

• Czasopismo: Prace Instytutu Technologii Elektronowej
• Rocznik: 2006
• Tom: z. 2
• Strony: 185-202
• Opis fizyczny: Bibliogr. 58 poz., wykr.

Twórcy

autor

Przewłocki, H. M.

• Institute of Electron Technology, Al. Lotników 32/46, 02-668 Warsaw, Poland,

Bibliografia

• [P1] BIENIEK T., BECK R. B., JAKUBOWSKI A., KUDŁA A.: Formation of Ultrathin Oxide Layers by Low Temperature Oxidation in r.f. Plasma. Elektronika 2005 No. 2-3 p. 9-10 (in Polish).
• [P2] BIENIEK T., BECK R. B., JAKUBOWSKI A., KUDŁA A.: Formation of Ultrathin Oxide Layers by Low Temperature Oxidation in r.f. Plasma (13.56 MHz). Proc. of the VIII Sci. Conf. "Electron Technology" ELTE 2004. Stare Jabłonki, Poland, 19-22.04.2004. IMiO PW 2005 p. 69-72 (in Polish).
• [P3] BIENIEK T., BECK R. B., JAKUBOWSKI A., KUDŁA A.: Ultra-Shallow Nitrogen Plasma Implantation for Ultra-Thin Silicon Oxynitride (SiOxNy) Layer Formation. J. of Telecom. a. Inform. Technol. 2005 No. 1 p. 70-75.
• [P4] BIENIEK T., BECK R. B., JAKUBOWSKI A., KUDŁA A.: Formation of Ultrathin Oxide Layers by Low Temperature Oxidation in r.f. Proc. of the VIII Sci. Conf. "Electron Technology" ELTE 2004. Stare Jabłonki, Poland, 19-22.04.2004. CD ROM 2005 p. 329-332 (in Polish).
• [P5] CIOSEK J., PASZKOWICZ W., KUDŁA A., PANKOWSKI P., STANISŁAWEK U.: Zr-Silicate Co-Evaporated Thin Films. Proc. SPIE (submit. to publ.).
• [P6] GUTT T.: Impedance Measurements of Ultra-Thin Dielectric MOS Capacitors. Proc. of the VIII Sci. Conf. "Electron Technology" ELTE 2004. Stare Jabłonki, Poland, 19-22.04.2004. IMiO PW 2005 p. 337-340.
• [P7] GUTT T.: Conductance Spectroscopic Analysis of Traps at SiC-SiO2 Interface on Various Substrates. Proc. of the IV Domestic. Conf. on Electronics KKE. Surface and Thin Film Structures. Darłówko Wschodnie, Poland, 12-15.06.2005. vol. 2/2, p. 397-402 (in Polish).
• [P8] GUTT T.: Conductance Spectroscopic Analysis of Traps at SiC-SiO2 Interface on Various Substrates. Conf. on Microelectronics ,Electronics and Electronic Technologies. Proc. of the 28th Int. Convention. Sem. Opatija, Croatia, 30.05-3.06.2005, p. 61-64.
• [P9] HEJDUK K., PIERŚCIŃSKI K., RZODKIEWICZ W., MUSZALSKI J., KANIEWSKI J.: Dielectric Coatings for Infrared Detectors. Optica Appl. 2005 vol. 35 No. 3 p. 437-448.
• [P10] JAROSZEWICZ B., DOMAŃSKI K., TOMASZEWSKI D., JANUS P., KUDŁA A., LATECKI B., KOCIUBIŃSKI A., NIKODEM M., KĄTCKI J., WZOREK M., MARCZEWSKI J., GRABIEC P.: Application of Ion Implantation for Mono-Si Piezoresistors Manufacturing in Silicon MEMS Technology. Vacuum 2005 vol. 78 No. 2-4 p. 263-267.
• [P11] KAMIŃSKA E., PIOTROWSKA A., GOŁASZEWSKA K., ŁUKASIEWICZ R., SZCZĘSNY A., KOWALCZYK E., JAGODZIŃSKI P., GUZIEWICZ M., KUDŁA A., BARCZ A., JAKIELA R.: Thermally Stable Transparent Ru-SiO Schottky Contacts for n-Type GaN and AlGaN. Mater. Res. Soc. Symp. Proc. 2005 vol. 831 p. E3.41.1-E3.41.6.
• [P12] KUDŁA A., BOROWICZ L.: Determination of the Optical Properties of Thin Metal Layers in MOS Structures with Spectroscopic Ellipsometry and Interferometric Microscopy. Proc. of the VII School - Conf. "Computer Aided Metrology" MWK-2005. Waplewo, Poland, 17-20.05. 2005. vol. II p. 271-278 (in Polish).
• [P13] KUDŁA A., BOROWICZ L., ZABOROWSKi M.: Determination of the Optical Properties of Thin Metal Layers in MOS Structures with Spectroscopic Ellipsometry and Interferometric Microscopy. Proc. of the Woollam Ellipsometer User Seminar. Darmstadt, Germany, 10-12.10.2005. L.O.T. ORIEL 2005.
• [P14] KUDŁA A., PISKORSKI K., PRZEWŁOCKI H. M., BOROWICZ L., BRZEZIŃSKA D.: Photoelectrical Measurements of the Local Values of the Effective Contact Potential Difference in the MOS Structure. Proc. of the VII Conf. School "Computer Aided Metrology" MWK-2005. Waplewo, Poland, 17-20.05.2005. vol. III. p. 35-44 (in Polish).
• [P15] KUDŁA A., PRZEWŁOCKI H. M., BRZEZIŃSKA D., BOROWICZ L.: Photoelectrical Measurements of the Local Values of the Effective Contact Potential Difference in the MOS Structure. J. of Telecom. a. Inform. Technol. 2005 vol. 1 p. 112-114.
• [P16] LEŚKO M., PRZEWŁOCKI H. M.: Investigation of the Influence of Temperature on Electrical Parameters of MOS Devices. Elektronika 2005 No. 2-3 p. 56-57 (in Polish).
• [P17] LEŚKO M., PRZEWŁOCKI H. M.: Investigation of the Influence of Temperature on Electrical Parameters of MOS Devices. Proc. of the VIII Sci. Conf. "Electron Technology" ELTE 2004. Stare Jabłonki, Poland, 19-22.04.2004. IMiO PW 2005 p. 173-176 (in Polish).
• [P18] LEŚKO M., PRZEWŁOCKI H. M., RZODKIEWICZ W.: Investigation of the Influence of Temperature on Electrical Parameters of MOS Devices. Optica Appl. (submit. to publ.).
• [P19] PAPIS E., PIOTROWSKA A., KAMIŃSKA E., PIOTROWSKI T. T., KUDŁA A., SZADE J., WINIARSKI A., WAWRO A.: Electrochemical Sulphur Passivation of InGaAsSb and AlGaAsSb Surfaces. Proc. of the IV Int. Workshop on Semiconductor Surface Passivation SSP'2005, Ustroń, Poland, 10-14.09.2005. Abstract of oral contribution. 2005 p. 32.
• [P20] PIOTROWSKA A., PAPIS E., GOŁASZEWSKA K., ŁUKASIEWICZ R., KAMIŃSKA E., PIOTROWSKI T. T., KRUSZKA R., KUDŁA A., RUTKOWSKI J., SZADE J., WINIARSKI A., WAWRO A., ALESZKIEWICZ M.: Improved Performance of GaSb-Based MIR Photodetectors through Electrochemical Passivation in Sulphur Containing Solution. Mater. Res. Soc. Symp. Proc. 2005 vol. 829 p. B6.8.1-B6.8.6.
• [P21] PISKORSKI K., KUDŁA A., PRZEWŁOCKi H. M.: Estimation of the Accuracy of the Barrier Height Determination Methods in MOS Structures. Proc. of the VIII Sci. Conf. "Electron Technology" ELTE 2004. Stare Jabłonki, Poland, 19-22.04.2004. CD ROM 2005 p. 429-432 (in Polish).
• [P22] PISKORSKI K., KUDŁA A., RZODKIEWICZ W., PRZEWŁOCKI H. M.: Comparison of the Barrier Height Measurements by the Powell Method with the Photoelectric Effective Contact Potential Difference Measurement Results. J. of Telecom. a. Inform. Technol. 2005 vol. 1 p. 120-123.
• [P23] PISKORSKI K., PRZEWŁOCKI H. M.: Distribution of Potential Barrier Height Local Values at Al-SiO2 and Si-SiO2 Interfaces of the Metal-Oxide-Semiconductor (MOS) Structures. Proc. of the IV Domestic. Conf. on Electronics KKE. Darłówko Wschodnie, Poland, 2-15.06.2005. vol. 2/2 p. 313-318 (in Polish).
• [P24] PISKORSKI K., PRZEWŁOCKi H. M.: Distribution of Potential Barrier Height Local Values at Al-SiO2 and Si-SiO2 Interfaces of the Metal-Oxide-Semiconductor (MOS) Structures. Conf. on Microelectronics, Electronics and Electronic Technologies. Proc. of the 28th Int. Convention. Opatija, Croatia, 30.05-3.06.2005, p. 68-72.
• [P25] PISKORSKI K., PRZEWŁOCKI H. M.: Distribution of Potential Barrier Height Local Values at Al-SiO2 and Si-SiO2 Interfaces of the Metal-Oxide-Semiconductor (MOS) Structures. Bull. of Polish Academy Science 2006 vol. 54 p. 461-468.
• [P26] PRZEWŁOCKI H. M.: Studies of Structures Fabricated on SiC Substrates Carried Out in ITE. Proc. of the IV Domestic. Conf. on Electronics KKE. Darłówko Wschodnie, Poland, 12-15.06.2005. vol. 2/2 p. 611-612 (in Polish).
• [P27] PRZEWŁOCKI H. M., KUDŁA A., BRZEZIŃSKA D., MASSOUD H. Z.: Variability of the Local [Phi]MS Values over the Gate Area of MOS Devices. J. of Telecom. a. Inform. Technol. 2005 vol. 1 p. 34-39.
• [P28] PRZEWŁOCKI H. M., KASSUR A., KUDŁA A., GUTT T., LIS D., RZODKIEWICZ W., PISKORSKI K., LEŚKO M., BOROWICZ L., BRZEZIŃSKA D., SAWICKI Z.: Department of the MOS Systems Studies. Annual Report 2004. ITE Warsaw 2004, p. 169-183 (in Polish).
• [P29] PRZEWŁOCKI H. M., KASSUR A., KUDŁA A., GUTT T., LIS D., RZODKIEWICZ W., PISKORSKI K., LEŚKO M., BOROWICZ L., BRZEZIŃSKA D., SAWICKI Z.: Department of MOS System Studies. In: Institute of Electron Technology. Scientific Activity 2004. Prace ITE 2005 No. 1/2 p. 159-174.
• [P30] RZODKIEWICZ W., BOROWICZ L.: Application of Interferences Methods for Determination of Curvature Radius in MOS Structures. Proc. of the X Sem. "Surface and Thin Film Structures – 2005". Szklarska Poręba, Poland, 17-21.05.2005. Optica Appl. 2005 vol. 35 No. 3 p. 523-527.
• [P31] RZODKIEWICZ W., KUDŁA A., MISIUK A., SURMA B., BĄK-MISIUK J.: Structural Characterization of Self-Implanted Si after HT-HP Treatment. Mater. Sci. a. Eng. B 2005 vol. 124-125 p. 170-173.
• [P32] RZODKIEWICZ W., KUDŁA A., RATAJCZAK J., PISKORSKI K., ULYASHIN A.: Optical and Microstructural Studies of Hydrogenated Cz-Si in HT-HP Process. Proc. of the VIII Sci. Conf. "Electron Technology" ELTE 2004. Stare Jabłonki, Poland, 19-22.04.2004. IMiO PW 2005 p. 205-208 (in Polish).
• [P33] RZODKIEWICZ W., KUDŁA A., SAWICKI Z., PRZEWŁOCKI H. M.: Effects of Stress Annealing on the Electrical and the Optical Properties of MOS Devices. J. of Telecom. a. Inform. Technol. 2005 No. 1 p. 115-119.
• [P34] RZODKIEWICZ W., PANAS A., PRZEWŁOCKI H. M.: Studies of Compaction and Decompaction of SiO2 Layers on Silicon Substrates by Inter- ferometry and Spectroscopic Ellipsometry. J. Appl. Surface Sci. (submit. to publ.).
• [P35] SOCHACKI M., ŁUKASIEWICZ R., RZODKIEWICZ W., WERBOWY A., SZMIDT J., STARYGA E.: Silicon Dioxide and Silicon Nitride as a Passivation and Edge Termination for 4H-SiC Schottky Diodes. Diamond a. Related Mater. 2005 No. 14 p. 1138-1141.
• [P36] SOCHACKI M., ŁUKASIEWICZ R., SZMIDT J., RZODKIEWICZ W., LEŚKO M., WIATROSZAK M.: Silicon Dioxide and Silicon Nitride as a Passivation and Edge Termination for 4H-SiC Schottky Diodes. Proc. of the VIII Sci. Conf. "Electron Technology" ELTE 2004. Stare Jabłonki, Poland, 19-22.04.2004. IMiO PW 2005 p. 209-212 (in Polish).
• [P37] WIĘCŁAW-SOLNY L., JARZĘBSKI A. B., MROWIEC-BIAŁOŃ J., TUREK W., UJMA Z., KUDŁA A., GIBAS M., ŻAK J.: Fabrication of Nafion- and Heteropoly Acid-Containing Thin Catalytic Films without Failure. Appl. Catalysis A: General 2005 No. 285 p. 79-85.
• [P38] YASTRUBCHAK O., DOMAGALA J. Z., WOSIŃSKI T., KUDŁA A., REGIŃSKI K.: Anisotropic Strain Relaxation in Lattice-Mismatched III-V Epitaxial Layers. phys. stat. sol. (c) 2005 vol. 2 No. 6 p. 1943-1947.
• [C1] CIOSEK J., PASZKOWICZ W., KUDŁA A., PANKOWSKI P., STANISŁAWEK U.: Zr-Silicate Co-Evaporated Thin Films. Optical Systems Design 2005. Jena, Germany, 12-16.09.2005 (poster).
• [C2] GUTT T.: Conductance Spectroscopic Analysis of Traps at SiC-SiO2 Interface on Various Substrates. IV Domestic Conf. on Electronics KKE. Darłówko Wschodnie, Poland, 12-15.06.2005 (paper, in Polish).
• [C3] GUTT T.: Conductance Spectroscopic Analysis of Traps at SiC-SiO2 Interface on Various Substrates. Conf. on Microelectronics Electronics and Electronic Technologies. 28th Int. Convention. Sem. Opatija, Croatia, 30.05-3.06.2005.
• [C4] HEJDUK K., PIERŚCIŃSKI K., RZODKIEWICZ W., MUSZALSKI J., KANIEWSKI J.: Dielectric Coatings for Infrared Detectors. X Sem. "Surface and Thin Film Structures - 2005". Szklarska Poręba, Poland, 17-21.05.2005 (poster).
• [C5] KUDŁA A., BOROWICZ L.: Determination of the Optical Properties of Thin Metal Layers in MOS Structures with Spectroscopic Ellipsometry and Interferometric Microscopy. VII Conf. School "Computer Aided Metrology" MWK-2005. Waplewo, Poland, 17-20.05. 2005 (paper, in Polish).
• [C6] KUDŁA A., BOROWICZ L., ZABOROWSKI M.: Determination of the Optical Properties of Thin Metal Layers in MOS Structures with Spectroscopic Ellipsometry and Interferometric Microscopy. Conf. "Optical Metrology". Munich, Germany, 11-18.06.2005.
• [C7] KUDŁA A., BOROWICZ L., ZABOROWSKI M.: Determination of the Optical Properties of Thin Metal Layers in MOS Structures with Spectroscopic Ellipsometry and Interferometric Microscopy. Woollam Ellipsometer User Seminar. Darmstadt, Germany, 10-12.10.2005. L.O.T. ORIEL 2005.
• [C8] KUDŁA A., PISKORSKI K., PRZEWŁOCKI H. M.: Photoelectrical Investigation of MOS Structures with Optically Thick Al and Poly-Si Gates. E-MRS 2005 Spring Meet., Strasbourg, France, 31.05-3.06.2005 (commun.).
• [C9] KUDŁA A., PISKORSKI K., PRZEWŁOCKI H. M., BOROWICZ L., BRZEZIŃSKA D.: Photoelectrical Investigation of MOS Structures with Optically Thick Al and Poly-Si Gates. VII Conf. School "Computer Aided Metrology" MWK-2005. Waplewo, Poland, 17-20.05.2005 (paper, in Polish).
• [C10] LEŚKO M., PRZEWŁOCKI H. M., RZODKIEWICZ W.: Investigation of the Influence of Temper- ature on Electrical Parameters of MOS Devices. X Sem. "Surface and Thin Film Structures - 2005". Szklarska Poręba, Poland, 17-21.05.2005.
• [C11] PAPIS E., PIOTROWSKA A., GOLASZEWSKA K., ŁUKASIEWICZ R., PIOTROWSKI T. T., KAMIŃSKA E., KRUSZKA R., KUDLA A., RUTKOWSKI J., SZADE J., WINIARSKI A., WAWRO A.: Properties of InGaAsSb and AlGaAsSb Surfaces under Sulphide Treatments Studies Using XPS and VASE Techniques. Int. Congress of Optics and Optoelectronics, Warsaw, Poland, 28.08-2.09.2005 (poster).
• [C12] PAPIS E., PIOTROWSKA A., KAMIŃSKA E., PIOTROWSKI T. T., KUDŁA A., SZADE J., WINIARSKI A., WAWRO A.: Electrochemical Sulphur Passivation of InGaAsSb and AlGaAsSb Surfaces. IV Int. Workshop on Semiconductor Surface Passivation SSP'2005, Ustroń, Poland, 10-14.09.2005.
• [C13] PISKORSKI K., PRZEWŁOCKI H. M.: Distribution of Potential Barrier Height Local Values at Al-SiO2 and Si-SiO2 Interfaces of the Metal-Oxide-Semiconductor (MOS) Structures. Conf. on Microelectronics, Electronics and Electronic Technologies. 28th Int. Convention. Opatija, Croatia, 30.05-3.06.2005.
• [C14] PISKORSKI K., PRZEWŁOCKI H. M.: Distribution of Potential Barrier Height Local Values at Al-SiO2 and Si-SiO2 Interfaces of the Metal-Oxide-Semiconductor (MOS) Structures. IV Domestic Conf. on Electronics KKE. Darłówko Wschodnie, Poland, 12-15.06.2005 (paper, in Polish).
• [C15] PRZEWŁOCKI H. M.: Studies of Structures Fabricated on SiC Substrates Carried Out in ITE. IV Domestic Conf. on Electronics KKE. Darłówko Wschodnie, Poland, 12-15.06.2005 (paper, in Polish).
• [C16] PRZEWŁOCKI H. M.: New Approach to Internal Photoemission and New MOS Structure Measurement Methods. Chalmers University of Technology, Göteborg, Sweden, 6.10.2005 (inv. lecture).
• [C17] PRZEWŁOCKI H. M.: Silicon – Overcoming the Limitations. Chalmers University of Technology, Göteborg, Sweden, 7.10.2005 (inv. lecture).
• [C18] RZODKIEWICZ W., BOROWICZ L.: Application of Interferences Methods for Determination of Curvature Radius in MOS Structures. X Sem. "Surface and Thin Film Structures – 2005". Szklarska Poręba, Poland, 17-21.05.2005.
• [C19] RZODKIEWICZ W., KUDŁA A., MISIUK A., SURMA B., BĄK-MISIUK J.: Structural Characterization of Self-Implanted Si after HT-HP Treatment. E-MRS 2005 Spring Meet. Strasbourg, France, 31.05-3.06.2005 (poster).
• [C20] RZODKIEWICZ W., PANAS A., PRZEWŁOCKI H. M.: Studies of Compaction and Decompaction of SiO2 Layers on Silicon Substrates by Interferometry and Spectroscopic Ellipsometry. E-MRS 2005 Spring Meet. Strasbourg, France, 31.05-3.06.2005 (poster).