Department of Materials and Semiconductor Structures Research

• Autorzy: Czerwiński, A.
• Języki publikacji: EN

Słowa kluczowe

PL

Instytut Technologii Elektronowej; działalność naukowo-badawcza

EN

Institute of Electron Technology; scientific activity

• Czasopismo: Prace Instytutu Technologii Elektronowej
• Rocznik: 2006
• Tom: z. 2
• Strony: 148-161
• Opis fizyczny: Bibliogr. 37 poz., rys., wykr.

Twórcy

autor

Czerwiński, A.

• Institute of Electron Technology, Al. Lotników 32/46, 02-668 Warsaw, Poland,

Bibliografia

• [P1] ANTONOVA I. V., MISIUK A., BARCZ A., RATAJCZAK A.: Electrical and Structural Properties of Multilayer Structures Formed by Implantation of Nitrogen or Oxygen and Annealed under High Pressure. J. Appl. Phys. (submit. to publ.)
• [P2] CIOSEK J., RATAJCZAK J.: Influence of Temperature-Pressure Treatment on the Heavily Hydrogenated Silicon Surface. Appl. Surf. Sci. 2006 vol. 252 p. 6115-6118.
• [P3] CZERWIŃSKI A., PŁUSKA M., RATAJCZAK J., KĄTCKI J.: In-situ EBIC Measurements of Local-Thickness in Semiconductor Devices. J. of Microscopy 2006 vol. 224 p. 86-88.
• [P4] GÓRSKA M., WRZESIŃSKA H., SZERLING A., HEJDUK K., RATAJCZAK J., ŁYSKO J. M.: HBV Deep Mesa Etching in the InGaAs/InAlAs/AlAs Heterostructure on InP Substrate. Mater. Sci.-Poland 2005 No. 23 p. 221-226.
• [P5] JAROSZEWICZ B., DOMAŃSKI K., TOMASZEWSKI D., JANUS P., KUDLA A., LATECKI B., KOCIUBIŃSKI A., NIKODEM M., KĄTCKI J., WZOREK M., MARCZEWSKI J., GRABIEC P.: Application of Ion Implantation for Mono-Si Piezoresistors Manufacturing in Silicon MEMS Technology. Vaccum 2005 No. 78 p. 263-267.
• [P6] JUNG W., MISIUK A., RATAJCZAK J., BARCZ A.: Effect of Heat Treatment at Enhanced Pressure on Electrical and Structural Properties of Silicon Surface Layer Co-Implanted with Hydrogen and Helium Ions. Opto-Electron. Rev. 2005 No. 13 p. 31-34.
• [P7] LU J., CZERWINSKI A., KORDAS L., ZHAO W., ROZGONYI G.: Characterization of Threading Dislocations in Strained-Si/SiGe Heterostructures Using Preferential Two-Step Etching and MOS-EBIC. 2005 Int. Conf. on Characterization and Metrology for ULSI Technology, AIP Conf. Proc. No. 788, Subseries: Material Science and Application, American Institute of Physics 2005 p. 633-637.
• [P8] ŁASZCZ A., KĄTCKI J., RATAJCZAK J., CIEŻ M., PŁUSKA M.: Electron Microscopy Characterisation of ZnS:Cu:Cl Phosphorus. Proc. of Microscopy of Semiconducting Mater. 2005, p. 495-498.
• [P9] ŁASZCZ A., KĄTCKI J., RATAJCZAK J., XIAOHUI TANG, DUBOIS E.: TEM Characterisation of Erbium Silicide Formation Process Using a Pt/Er Stack on a Thin Silicon-On-Insulator Substrate. J. of Microscopy 2006 vol. 224 p. 38-41.
• [P10] MISIUK A., RATAJCZAK A., KĄTCKI J., ANTONOVA I. V.: Impact of Hydrostatic Pressure During Annealing of Si:O on Creation of SIMOX-Like Structures. "Science and Technology of Semiconductor-On-Insulator Structures and Devices Operating in a Harsh Environment", Kluwer Academic Publish, The Netherlands, D. Flandre et al. (eds.), 2005 p. 91-96.
• [P11] PŁUSKA M., CZERWIŃSKI A., RATAJCZAK J., KĄTCKI J., RAK R.: Elimination of SEM-Image Periodic Distortions with Digital Signal Processing Methods. J. of Microscopy 2006 vol. 224 p. 89-92.
• [P12] PROCHWICZ W., CIEŻ M., KĄTCKI J., ŁASZCZ A., ŁUKASIK A. M., RATAJCZAK J., PORADA Z.: The Influence of Supply Voltage Parameters on Ageing Process of Thick-Film Electroluminescent Light Sources. Proc. of the 29th Int. Conf. of IMAPS Poland. Koszalin-Darłówko, Poland, 19-21.09.2005, p. 239–242.
• [P13] RZODKIEWICZ W., KUDŁA A., RATAJCZAK J., PISKORSKI K., ULYASHIN A.: Optical and Microstructural Studies of Hydrogenated Cz-Si Treated in HT-HP. Process. Proc. of the VIII Sci. Conf."Electron Technology" ELTE 2004, Stare Jabłonki, Poland, 19-22.04.2004. IMiO PW 2005 p. 205-208.
• [P14] SZERLING A., KOSIEL K., JEDLIŃSKA-WÓJCIK A., PŁUSKA M., BUGAJSKI M.: Investigation of Oval Defects in (In)Ga(Al)As/GaAs Heterostructures by Spatially-Resolved Photoluminescence and Micro-Cathodoluminescence. Mater. Sci. in Semicond. Process. 2006 vol. 9 p. 25-30.
• [P15] SZERLING A., KOSIEL K., JEDLIŃSKA-WÓJCIK A., PŁUSKA M., BUGAJSKI M.: Properties and Origin of Oval Defects in Epitaxial Structures Grown by MBE. Optica Appl. 2005 vol. 35 No. 3 p. 537-548.
• [P16] WZOREK M., KĄTCKI J., PŁUSKA M., RATAJCZAK J., JAROSZEWICZ B., DOMAŃSKI K., GRABIEC P.: Buried Amorphous-Layer Impact on Dislocation Densities in Silicon. J. of Microscopy 2006 vol. 224 p. 104-107.
• [P17] WZOREK M., KĄTCKI J., RATAJCZAK J., JAROSZEWICZ B., DOMAŃSKI K., GRABIEC P.: TEM Study of Silicon Implanted with Fluorine and Boron Applied to Piezoresistors Manufacturing. Proc. of the XIV Int. Conf. on Microscopy of Semiconducting Materials. Oxford, United Kingdom, 11-14.04.2005, p. 363-366.
• [C1] CIOSEK J., MISIUK A., RATAJCZAK J.: Influence of Temperature-Pressure Treatment on the Heavily Hydrogenated Silicon Surface. Int. Workshop on Surface Physics ECOSS-23 Satellite, Advanced and Bio-Materials. Polanica Zdrój, 10-13.09.2005.
• [C2] CIOSEK J., MISIUK A., BĄK-MISIUK J., SHALIMOV A., SURMA B., RATAJCZAK J., ZAVODINSKY V.: Heavily Hydrogenated Silicon Structure Modification by High Temperature-Pressure Treatment. BUTT 2005. Minsk, Belarus, 28-30.09.2005.
• [C3] CZERWIŃSKI A., PŁUSKA M., RATAJCZAK J., KĄTCKI J.: In-situ EBIC Measurements of Local-Thickness in Semiconductor Devices. XII Int. Conf. on Electron Microscopy of Solids (EM'2005). Kazimierz Dolny, Poland, 5-9.06.2005 (poster).
• [C4] LU J., CZERWINSKI A., KORDAS L., ZHAO W., ROZGONYI G.: Characterization of Threading Dislocations in Strained-Si/SiGe Heterostructures Using Preferential Two-Step Etching and MOS-EBIC. 2005 Int. Conf. on Characterization and Metrology for ULSI Technology. Richardson, Texas, USA, 15-18.03.2005 (commun.).
• [C5] ŁASZCZ A., KĄTCKI J., RATAJCZAK J., CIEŻ M., PŁUSKA M.: Electron Microscopy Characterisation of ZnS:Cu:Cl Phosphours. XIV Int. Conf. on Microscopy of Semiconducting Materials. Oxford, United Kingdom, 11-14.04.2005 (poster).
• [C6] ŁASZCZ A., KĄTCKI J., RATAJCZAK J., CZERWINSKI A., DUBOIS E., LARRIEU G., WALLART X.: TEM Characterisation of Accumulation Low Schottky Barrier MOSFET with PtSi Contacts. Autumn School on Materials Science and Electron Microscopy 2005 – Microscopy of Tomorrow's Industrial Materials. Berlin, Germany, 3-8.10.2005 (commun.).
• [C7] ŁASZCZ A., KĄTCKI J., RATAJCZAK J., XIAOHUI TANG, DUBOIS E.: TEM Characterisation of Erbium Silicide Formation Process Using a Pt/Er Stack on a Thin Silicon-On-Insulator Substrate. XII Int. Conf. on Electron Microscopy of Solids (EM'2005). Kazimierz Dolny, Poland, 5-9.06.2005 (poster).
• [C8] PŁUSKA M., CZERWIŃSKI A., RATAJCZAK J., KĄTCKI J., RAK R.: Elimination of SEM-Image Periodic Distortions with Digital Signal Processing Methods. XII Int. Conf. on Electron Microscopy of Solids (EM'2005). Kazimierz Dolny, Poland, 5-9.06.2005 (poster).
• [C9] PŁUSKA M.: Elimination of Periodic Distortion in a Scanning Electron Microscope Using Digital Signal Processing. Conf. on Metrology MKM 2005. Zielona Góra, Poland, 5-7.09.2005 (paper, in Polish).
• [C10] PŁUSKA M., RATAJCZAK J., CZERWIŃSKI A., KĄTCKI J., RAK R.: Software Methods for Identification and Compensation of Electron Beam Vibration in SEM. Autumn School on Materials Science and Electron Microscopy 2005 – Microscopy of Tomorrow's Industrial Materials. Berlin, Germany, 3-8.10.2005 (commun.).
• [C11] PROCHWICZ W., CIEŻ M., KĄTCKI J., ŁASZCZ A., ŁUKASIK A. M., RATAJCZAK J., PORADA Z.: The Influence of Supply Voltage Parameters on Ageing Process of Thick-Film Electroluminescent Light Sources. 29 Int. Conf. of IMAPS Poland. Koszalin-Darłówko, Poland, 19-21.09.2005 (poster).
• [C12] SKOCZYLAS P. A., PISKORSKI M., PIOTROWSKA A. B., GOŁASZEWSKA K., PIOTROWSKI T. T., KĄTCKI J., RATAJCZAK J., JUNG W., PRZESŁAWSKI T., WAWRO A., WÓJCIK M., GACA J.: GaAlAsSb/GaInAsSb/GaSb Structures for Thermophotovoltaic Cells. Int. Congress on Optics and Optoelectronics. Warsaw, Poland 2005 (poster).
• [C13] SZERLING A., KOSIEL K., JEDLIŃSKA-WÓJCIK A., PŁUSKA M., BUGAJSKI M.: Investigation of Oval Defects in (In)(Ga)AlAs/GaAs Heterostructures by Spatially-Resolved Photoluminescence and Micro-Cathodoluminescence. 11th Int. Physics in Semiconductors (DRIP XI). Beijing, China, 15-19.09.2005 (commun.).
• [C14] SZERLING A., KOSIEL K., WÓJCIK-JEDLIŃSKA A., PŁUSKA M., BUGAJSKI M.: Properties and Origin of Oval Defects in Epitaxial Structurtes Grown by MBE. X Sem. "Surface and Thin Film Structures – 2005". Szklarska Poręba, Poland, 17-21.05.2005 (commun.).
• [C15] WZOREK M., KĄTCKI J., PŁUSKA M., RATAJCZAK J., JAROSZEWICZ B., DOMAŃSKI K., GRABIEC P.: Buried Amorphous-Layer Impact on Dislocation Densities in Silicon. XII Int. Conf. on Electron Microscopy of Solids (EM'2005). Kazimierz Dolny, Poland, 5-9.06.2005 (poster).
• [C16] WZOREK M., KĄTCKI J., PŁUSKA M., RATAJCZAK J., JAROSZEWICZ B., DOMAŃSKI K., GRABIEC P.: TEM Study of Silicon Implanted with Fluorine and Boron Applied to Piezoresistors Manufacturing. XIV Int. Conf. on Microscopy of Semiconducting Materials. Oxford, United Kingdom, 11-14.04.2005 (poster).
• [C17] WZOREK M., KĄTCKI J., PŁUSKA M., RATAJCZAK J., JAROSZEWICZ B., DOMAŃSKI K., GRABIEC P.: The Impact of a Buried Amorphous Layer on Dislocation Densities in Silicon. Autumn School on Materials Science and Electron Microscopy 2005 – Microscopy of Tomorrow’s Industrial Materials. Berlin, Germany, 3-8.10.2005 (commun.).
• [PA1] CZERWIŃSKI A., PŁUSKA M., RATAJCZAK J., KĄTCKI J.: A Method to Measure the Current of Electron Beam for Quantitative Technique of Electron-Beam Induced Current. Pat. Appl. No. P.378464 (in Polish).
• [PA2] MISIUK A., RATAJCZAK A., ANTONOVA I. V., POPOV V. P.: A Method to Fabricate a Semiconductor Structure. Pat. RP No. P.335497 (in Polish).
• [PA3] PŁUSKA M., CZERWIŃSKI A., RATAJCZAK J., KĄTCKI J.: A Method to Eliminate Periodical Distortion in Scanning Electron Microscope. Pat. Appl. No. P.378546 (in Polish).