Department of Fundamental Problems of Electronics

• Autorzy: Świderski, J.
• Języki publikacji: EN

Słowa kluczowe

PL

Instytut Technologii Elektronowej; działalność naukowo-badawcza

EN

Institute of Electron Technology; scientific activity

• Czasopismo: Prace Instytutu Technologii Elektronowej
• Rocznik: 2006
• Tom: z. 2
• Strony: 133-147
• Opis fizyczny: Bibliogr. 89 poz., wykr.

Twórcy

autor

Świderski, J.

• Institute of Electron Technology, Al. Lotników 32/46, 02-668 Warsaw, Poland,

Bibliografia

• [P1] ANTONOVA I. V., MISIUK A., LONDOS C., SURMA B., SMAGULOVA S., BUKOWSKI A., JUNG W., BARCZ A.: Pressure-Induced Formation of Electrically Active Centers in Irradiated Silicon: Comparison of Electron and Neutron Irradiation. Vacuum 2005 vol. 77 p. 507-511.
• [P2] BRUZZI M., ADEY J., AL-AJILI A., ALEXANDROW P., ALFIERI G., ALLPORT P. P., BARCZ A. ET AL.: Radiation-Hard Semiconductor Detectors for Super LHC. Nucl. Instr. a. Meth. A 2005 vol. 541 No. 1-2 p. 189-201.
• [P3] CIOSEK J.: Resonant Cavity Photodetector for Communication Range. Proc. SPIE (submit. to publ.).
• [P4] CIOSEK J., RATAJCZAK J.: Influence of Temperature-Pressure Treatment on the Heavily Hydrogenated Silicon Surface. Appl. Surf. Sci. 2006 vol. 252 p. 6115-6118.
• [P5] CIOSEK J., MISIUK A., SURMA B., SHCHENNIKOV V. V.: Influence of Enhanced Temperature and Pressure on Structural Transformations in Pre-Annealed Cz-Si. phys. stat. sol. (a) 2006 vol. 203 No. 9 p. 2254-2259.
• [P6] CIOSEK J., PASZKOWICZ W., KUDŁA A., PANKOWSKI P., STANISŁAWEK U.: Zr-Silicate Thin Films. Proc. SPIE (submit. to publ.).
• [P7] DOBOSZ D., GOŁASZEWSKA K., ZYTKIEWICZ Z., KAMIŃSKA E., PIOTROWSKA A., PIOTROWSKI T., BARCZ A., JAKIEŁA R.: Properties of ZrN Films as Substrate Masks in Liquid Phase Epitaxial Lateral Overgrowth of Compounds Semiconductors. Cryst. Res. Technol. 2005 vol. 40 No. 4-5 p. 492-497.
• [P8] FRETWURST E., ADEY J., AL-AJILI A., ALFIERI G., ALLPORT P. P., ARTUSO M., ASSOUAK S., AVSET B., BARBASH L., BARCZ A., BATES R. ET AL.: Recent Advancements in the Development of Radiation Hard Semiconductor Detectors for S-LHC. Nucl. Instr. a. Meth. A. 2005 vol. 552 No. 1-2 p. 7-19.
• [P9] JAKIEŁA R., BARCZ A., WEGNER E., ZAGOJSKI A.: Diffusion and Activation of Zn Implanted into InP:S. Vacuum 2005 vol. 78 No. 2-4 p. 417-422.
• [P10] JUNG W., MISIUK A., LONDOS C. A.: Pressure Stimulated Creation of Oxygen-Related Defects in Oxygen-Implanted and Neutron-Irradiated Silicon. Vacuum 2005 vol. 78 No. 2-4 p. 199-203.
• [P11] JUNG W., MISIUK A., LONDOS C. A., YANG D., ANTONOVA I. V., PRUJSZCZYK M.: Influence of High Pressure Annealing on Electrical Properties of Surface Layer of Neutron Irradiated or Germanium Doped Czochralski-Grown Silicon. Optica Appl. 2005 vol. 35 No. 3 p. 393-398.
• [P12] JUNG W., MISIUK A., RATAJCZAK J., BARCZ A.: Effect of Heat Treatment at Enhanced Pressure on Electrical and Structural Properties of Silicon Surface Layer Co-Implanted with Hydrogen and Helium Ions. Opto-Electron. Rev. 2005 vol. 13 No. 1 p. 31-34.
• [P13] KAMIŃSKA E., KOSSUT J., PIOTROWSKA A., PRZEŹDZIECKA E., DOBROWOLSKI W., DYNOWSKA E., BUTKUTE R., BARCZ A., JAKIEŁA R., ALESZKIEWICZ M., JANIK E., KOWALCZYK E.: Transparent p-Type ZnO by Oxidation of Zn-Based Compound. AIP Conf. Proc. 2005 vol. 772 p. 185-186.
• [P14] KAMIŃSKA E., PIOTROWSKA A., GOŁASZEWSKA K., ŁUKASIEWICZ R., SZCZĘSNY A., KOWALCZYK E., JAGODZIŃSKI P., GUZIEWICZ M., KUDŁA A., BARCZ A., JAKIELA R.: Thermally Stable Transparent Ru-SiO Schottky Contacts for n-Type GaN and AlGaN. Mater. Res. Soc. Symp. Proc. Vol. 831, 2005 Mater. Res. Soc. E3.41.1-E3.41.6.
• [P15] KAMIŃSKA E., PIOTROWSKA A., KOSSUT J., BARCZ A., BUTKUTE R., DOBROWOLSKI R., DYNOWSKA E., JAKIEŁA R., ŁUKASIEWICZ R., ALESZKIEWICZ M., WOJNAR P., KOWALCZYK E.: Transparent p-Type ZnO Films Obtained by Oxidation of Sputter-Deposited Zn3N2. Solid State Commun. 2005 vol. 135 No. 1-2 p. 11-15.
• [P16] KAMIŃSKA E., PIOTROWSKA A., KOSSUT J., BUTKUTE R., DOBROWOLSKI R., ŁUKASIEWICZ R., BARCZ A., JAKIEŁA R., DYNOWSKA E., PRZEŹDZIECKA E., ALESZKIEWICZ M., KOWALCZYK E.: P-Type Conducting ZnO: Fabrication and Characterization. phys. stat. sol. (c) 2005 vol. 2 No. 3 p. 1119-1124.
• [P17] KAMIŃSKA E., PIOTROWSKA A., SZCZĘSNY A., ŁUKASIEWICZ R., KUCHUK A., GOŁASZEWSKA K., KRUSZKA K., BARCZ A., JAKIEŁA R., DYNOWSKA E., STONERT A., TUROS A.: Thermally Stable Ru-Si-O Gate Electrode for AlGaN/GaN HEMT. phys. stat. sol. (c) 2005 vol. 2 No. 3 p. 1060-1064.
• [P18] KAMUDA K., KALITA W., KOŁODZIEJSKI J.: Aspects of Electromagnetic Compatibility in Data Transmission Systems with CAN Bus. Zesz. Nauk. Politechniki Łódzkiej Elektryka 2005 vol. 103 No. 962 p. 189-196 (in Polish).
• [P19] KAMUDA K., KALITA W., KOŁODZIEJSKI J.: The Analysis of Signal Propagation in Transmission Lines in the Configuration of CAN-Bus Controller. Proc. Conf. CAN in Automation 2005 p. 1-8.
• [P20] KANIEWSKA M., ENGSTRÖM O., BARCZ A., PACHOLAK-CYBULSKA M.: Deep Levels Induced by InAs/GaAs Quantum Dots. Mater. Sci & Eng. C 2006 vol. 26 p. 871-875.
• [P21] KANIEWSKA M., ENGSTRÖM O., BARCZ A., PACHOLAK-CYBULSKA M.: Electrical Activity of Deep Levels in the Presence of InAs/GaAs Quantum Dots. Mater. Sci. in Semicond. Process. 2006 vol. 9 p. 36-40.
• [P22] KANIEWSKA M., KRUKOVSKY S. I., ZAYACHUK D.: Deep Levels in Yb-Al Co-Doped GaAs Grown by LPE. Mater. Sci. in Semicond. Process. 2006 vol. 9 p. 366-370.
• [P23] KOŁODZIEJSKI J.: Immunity of Digital Integrated Circuits to External Electrical Hazards. Zesz. Nauk. Wydz. ETI PGd. Seria: Technologie Informacyjne 2005 No. 3 p. 921-930 (in Polish).
• [P24] KOŁODZIEJSKI J.: Selected Problems of Electromagnetic Compatibility. Proc. of V Polish EMC Workshop. Wrocław, Poland, 29.06-1.07.2005, p. 17-26 (in Polish).
• [P25] KOŁODZIEJSKI J. F.: Electrostatic Discharge – Technical and Standardization Aspects. Zesz. Nauk. Politechniki Łódzkiej Elektryka 2005 vol. 103 No. 962 p. 17-28 (in Polish).
• [P26] KOŁODZIEJSKI J., SZCZĘSNY J.: Signal Integrity and Electromagnetic Compatibility. Selected Problems of Electromagnetic Compatibility. Proc. of V Polish EMC Workshop. Wrocław, Poland, 29.06-1.07.2005, p. 27-36 (in Polish).
• [P27] KOŁODZIEJSKI J., GRYBOŚ P.: Low Voltage Differential Signalling LVDS. Elektronika 2005 No. 5 p. 52-55 (in Polish).
• [P28] KOZŁOWSKI M., MARCIAK-KOZŁOWSKA J.: Attophysics of Thermal Phenomena in Carbon Nanotubes. arXiv: cond-mat/0511445, 2005, p. 1-13.
• [P29] KOZŁOWSKI M., MARCIAK-KOZŁOWSKA J.: Habitable Sphere and Fine Structure Constant. http://lanl.arxiv.org/physics/0506085.
• [P30] KOZŁOWSKI M., MARCIAK-KOZŁOWSKA J.: Klein-Gordon-Equation with Casimir Potential for Attosecond Laser Interaction with Matter. arXiv: quant-ph/ 0511179, 2005, p.1-11.
• [P31] KOZŁOWSKI M., MARCIAK-KOZŁOWSKA J.: Space-Time Engineering with LASETRON Pulses. Lasers in Eng. 2005 vol. 15 No. 1-2 p. 23-31.
• [P32] KOZŁOWSKI M., MARCIAK-KOZŁOWSKA J.: Stability of Matter in the Accelerating Spacetime. Hadronic J. Suppl. 2005 vol. 18 p. 457-464.
• [P33] KOZŁOWSKI M., MARCIAK-KOZŁOWSKA J.: The Mirror Universes. http://lanl.arxiv.org/gr-qc/0505116 (2005).
• [P34] KOZŁOWSKI M., MARCIAK-KOZŁOWSKA J.: Thermal Proceeses using Attosecond Laser Pulses. Springer, USA, 2006.
• [P35] KOZŁOWSKI M., MARCIAK-KOZŁOWSKA J.: Wave-Diffusion Transition in Microtubules. arXiv:q-bio.BM/0511033, 2005, p. 1-12.
• [P36] KRUPA D., BASZKIEWICZ J., RAJCHEL B., BARCZ A., SOBCZAK J. W., BILIŃSKI A.: Effect of Sodium-Ion Implantation on the Corrosion Resistance and Bioactivity of Titanium. Vacuum 2005 vol. 78 No. 2-4 p. 161-166.
• [P37] KRUPA D., BASZKIEWICZ J., KOZUBOWSKI J., BARCZ A., SOBCZAK J. W., BILIŃSKI A., LEWANDOWSKA I., RAJCHEL B.: Effect of Dual Ion Implantation of Calcium and Phosphorus on the Properties of Titanium. Biomaterials 2005 vol. 26 p. 2847-2856.
• [P38] MARCIAK-KOZŁOWSKA J., KOZŁOWSKI M.: Dirac Type Thermal Equation for Thermal Process Induced by Attosecond Laser Pulses. Lasers in Eng. 2005 vol. 15 No. 1-2 p. 55-62.
• [P39] MARCIAK-KOZŁOWSKA J., KOZŁOWSKI M.: Interaction of Ultrashort Laser Pulses with Carbon Nanotubes. Lasers in Eng. 2006 vol. 16 No. 1-2 p. 39-50.
• [P40] MARCIAK-KOZŁOWSKA J., KOZŁOWSKI M.: On the Casimir Effect in the Microelectromechanical Systems MEMS. http://lanl.arxiv.org/cond-mat/0506226 (2005).
• [P41] MARCIAK-KOZŁOWSKA J., KOZŁOWSKI M.: Proca Equation for Laser Pulses Interaction with Matter. http://lanl.arxiv.org/cond-mat/0510578.
• [P42] MARCIAK-KOZŁOWSKA J., KOZŁOWSKI M.: Schrödinger-Newton Wave Mechanics. The Model. Hadronic J. 2005 vol. 28 p. 209-220.
• [P43] MARCIAK-KOZŁOWSKA J., KOZŁOWSKI M.: The Green Function for Thermal Waves Induced by Attosecond Laser Pulses in One and Three Dimensions. Lasers in Eng. 2005 vol. 15 No. 1-2 p. 1-7.
• [P44] MARCIAK-KOZŁOWSKA J., KOZŁOWSKI M.: Thermal Conduction in One Dimensional Structures Heated by Ultra-Short Laser Pulses. Lasers in Eng. 2005 vol. 15 p. 173-178.
• [P45] MARCIAK-KOZŁOWSKA J., KOZŁOWSKI M.: Thermal Processes Induced in Carbon Nanotubes by Attosecond Laser Pulses. http://lanl.arxiv.org/abs/cond-mat/0510141.
• [P46] MARCIAK-KOZŁOWSKA J., KOZŁOWSKI M.: Thermal Waves Induced by Laser Pulses in Quantum Corrals. Lasers in Eng. 2005 vol. 15 p. 257-265.
• [P47] MARCIAK-KOZŁOWSKA J., KOZŁOWSKI M.: Thermal Wave Packets Induced by Attosecond Laser Pulses. Lasers in Eng. 2005 vol. 15 No. 5-6 p. 257-265.
• [P48] MARCIAK-KOZŁOWSKA J., KOZŁOWSKI M., PELC M.: Engineering of the Polarization of a Quantum Vacuum Using Ultra-Short Laser Pulses. Lasers in Eng. 2005 vol. 15 p. 234-241.
• [P49] MARCIAK-KOZŁOWSKA J., KOZŁOWSKI M., PELC M.: Heisenberg Uncertainty Principle for Thermal Response of the Microtubules Excited by Ultra-Short Laser Pulses. http://lanl.arxiv.org/q-bio.BM/0501031 (2005).
• [P50] MARCIAK-KOZŁOWSKA J., KOZŁOWSKI M., PELC M.: Klein-Gordon Thermal Equation for Microtubules Excited by Ultra-Short Laser Pulses. Lasers in Eng. 2006 vol. 16 No. 3/4.
• [P51] MARCIAK-KOZŁOWSKA J., KOZŁOWSKI M., PELC M.: Klein-Gordon Thermal Equation with Casimir Potential for Ultra-Short Laser Pulses. Lasers in Eng. 2006 vol. 16 No. 3/4.
• [P52] MARCIAK-KOZŁOWSKA J., KOZŁOWSKI M., PELC M.: p-Meson as the Quanta of Non-Newtonian Hadronic Fluid. http://lanl.arxiv.org/nucl-th/0504060 (2005).
• [P53] MISIUK A., BARCZ A., SURMA B., BĄK-MISIUK J.: Effect of Pressure on Emission of Hydrogen from Silicon Co-Implanted with Hydrogen and Helium. Proc. ICHMS 2005.
• [P54] MISIUK A., BARCZ A., SURMA B., BĄK-MISIUK J., WNUK A.: Microstructure of Czochralski Silicon Co-Implanted with Helium and Hydrogen and Treated at High Temperature and Pressure. Opto-Electron. Rev. 2004 vol. 12(4) p. 383-387.
• [P55] MISIUK A., BĄK-MISIUK J., ORLIŃSKA K., BARCZ A., SURMA B., PRUJSZCZYK M.: The Structure of Silicon Implanted with Nitrogen and Annealed under High Hydrostatic Pressure. Proc. of 47th Crystallographic Sem. Wrocław, Poland, 30.06-1.07.2005, p. 1-2 (in Polish).
• [P56] MISIUK A., SURMA B., BARCZ A., ORLIŃSKA K., BĄK-MISIUK J., ANTONOVA I. V.: Strain and Defect Engineering in Si/Si3N4/Si by High Temperature-Pressure Treatment. Mater. Sci. & Eng. B 2005 vol. 124-125 p. 174-178.
• [P57] MOLL M., ADEY J., AL-AJILI A., ALFIERI G., ALLPORT P. P., ARTUSO M., BARCZ A. ET. AL.: Development of Radiation Tolerant Semiconductor Detectors for the Super-LHC. Nucl. Instr. a. Meth. A 2005 vol. 546 No. 1-2 p. 99-107.
• [P58] PELC M., MARCIAK-KOZŁOWSKA J., KOZŁOWSKI M.: Proca Thermal Equation for Attosecond Laser Pulses Interaction with Matter. Lasers in Eng. 2005 vol. 15 No. 5-6 p. 347-354.
• [P59] SZERMER M., KOŁODZIEJSKI J., SZCZĘSNY J.: Dynamic Stability of Sigma/Delta ADCs and Their Immunity to Electromagnetic Disturbances. Proc. of EMC COMPO’05.
• [P60] ŚWIDERSKI J.: Support for Innovation and Technology Transfer in the Area of Electrical Engineering. Mater. of International Day of Electrical Engineering. Warsaw, Poland, 10.06.2005 (in Polish).
• [P61] WIERZCHOWSKI W. K., MISIUK A., WIETESKA K., BĄK-MISIUK J., JUNG W., SHALIMOV A., GRAEFF W., PRUJSZCZYK M.: Defect Structure of Czochralski Silicon Co-Implanted with Helium and Hydrogen and Treated at High Temperature-Pressure. Semicond. Phys. a. Quantum Electron. Phys. Quantum Electron. 2005 vol. 8 No. 2 p. 7-11.
• [P62] ZABOROWSKI M., GRABIEC P., BARCZ A.: Manufacturing of Pt-Electrode by Wet Etching. Microelectron. Eng. 2005 vol. 82 No. 3-4 p. 283-288.
• [C1] CIOSEK J.: Resonant Cavity Photodetector for Communication Range. SPIE Int. Congress on Optics and Optoelectronics. Warsaw, Poland, 28.08-2.09.2005 (poster).
• [C2] CIOSEK J., MISIUK A., RATAJCZAK J.: Influence of Temperature – Pressure Treatment on the Heavily Hydrogenated Silicon Surface. Int. Workshop on Surface Physics IWSP 2005. Polanica Zdrój, Poland, 10-13.09 2005.
• [C3] CIOSEK J., PASZKOWICZ W., KUDŁA A., PANKOWSKI P., STANISŁAWEK U.: Zr-Silicate Co-Evaporated Thin Films. Optical Systems Design 2005. Jena, Germany, 12-16.09.2005 (poster).
• [C4] JUNG W., MISIUK A., ANTONOVA I. V., LONDOS C. A., YANG D., PRUJSZCZYK M.: The Influence of High Pressure Annealing on Electrical Properties of Surface Layer of Si Irradiated with Neutrons or Germanium Doped. X Sem. "Surface and Thin Film Structures – 2005". Szklarska Poręba, Poland, 17-21.05.2005 (poster).
• [C5] KAMIŃSKA E., PRZEŹDZIECKA E., PIOTROWSKA A., KOSSUT J., BARCZ A., JAKIEŁA R., DOBROWOLSKI W., ŁUKASIEWICZ R.: Effect of Atmosphere on the ThermallyActivated Diffusion of Ga and As across ZnTe/GaAs Interface. XXXIV Int. School on the Physics of Semiconducting Compounds 2005. Ustroń Jaszowiec, Poland, 4-10.06.2005 (poster).
• [C6] KAMIŃSKA E., PRZEŹDZIECKA E., PIOTROWSKA A., KOSSUT J., DYNOWSKA E., DOBROWOLSKI W., BARCZ A., JAKIEŁA R., LUSAKOWSKA E., RATAJCZAK J.: ZnO-Based p-n Junction with p-Type ZnO by ZnTe Oxidation. MRS Fall Meet. 2005. Boston, USA, 28.11-2.12.2005.
• [C7] KAMUDA K., KALITA W., KOŁODZIEJSKI J.: Aspects of Electromagnetic Compatibility in Data Transmission Systems with CAN Bus. IV Domestic. Symp. "Electromagnetic Compatibility in Electrotechnics and Electronics". Łódź, Poland, 6-7.10.2005 (paper, in Polish).
• [C8] KAMUDA K., KALITA W., KOŁODZIEJSKI J.: The Analysis of Signal Propagation in Transmission Lines in the Configuration od CAN-Bus Controller. Int. CAN Conf. Rome, Italy, 2005.
• [C9] KANIEWSKA M., ENGSTRÖM O., BARCZ A., PACHOLAK-CYBULSKA M.: Deep Levels Induced by InAs/GaAs Quantum Dots. E-MRS 2005 Spring Meet. Strasbourg, France, 31.05-3.06.2005.
• [C10] KANIEWSKA M., ENGSTRÖM O., BARCZ A., PACHOLAK-CYBULSKA M.: Electrical Activity of Deep Levels in the Presence of InAs/GaAs Quantum Dots. DRIP XI 2005, Beijing, China.
• [C11] KANIEWSKA M., KRUKOVSKY S. I., ZAYACHUK D.: Deep Levels in Yb-Al Co-Doped GaAs Grown by LPE. DRIP XI 2005. Beijing, China.
• [C12] KOŁODZIEJSKI J.: Analog Properties of Digital Signals and Random Signals in Digital Circuits – Selected Issues. 4th Sem. "Measurement of Random Signals", Gdańsk, Poland, 2005 (paper, in Polish).
• [C13] KOŁODZIEJSKI J. F.: Electrostatic Discharge – Technical and Standardization Aspects. IV Domestic. Symp. "Electromagnetic Compatibility in Electrotechnics and Electronics". Łódź, Poland, 6-7.10.2005 (paper, in Polish).
• [C14] KOŁODZIEJSKI J., SZCZĘSNY J.: Signal Integrity and Electromagnetic Compatibility. Selected Problems of Electromagnetic Compatibility. Proc. of V Polish EMC Workshop. Wrocław, Poland, 29.06-1.07.2005 (paper, in Polish).
• [C15] MISIUK A., BARCZ A., SURMA B., ANTONOVA I. V., DUB S.: Strain and Defect Engineering in Si/Si3N4/Si by High Temperature-Pressure Treatment. E-MRS 2005 Spring Meet. Strasbourg, France, 31.05-3.06.2005 (poster, in Polish).
• [C16] MISIUK A., BĄK-MISIUK J., ORLIŃSKA K., BARCZ A., SURMA B., PRUJSZCZYK M.: The Structure of Silicon Implanted with Nitrogen and Annealed under High Hydrostatic Pressure. 47th Crystallography Workshop. Wrocław, Poland, 30.06-1.07.2005 (poster, in Polish).
• [C17] MISIUK A., BĄK-MISIUK J., SURMA B., BARCZ A., JAGIELSKI J., JUNG W., OSINNIYG W., SHALIMOV A.: Effect of Pressure Annealing on Structure of Magnetic Si:Mn. DRIP XI 2005. Beijing, China, 15-19.09.2005 (poster).
• [C18] MISIUK A., CIOSEK J., BAK-MISIUK J., SURMA B., RATAJCZAK J., SHALIMOV A., ZAVODINSKY V. G., KUDŁA A.: Influence of Enhanced Temperature Pressure on Structural Transformations in Pre-Annealed Cz-Si. E-MRS 2005 Fall Meet. Warsaw, Poland, 5-9.09.2005 (poster).
• [C19] SKOCZYLAS P. A., PISKORSKI M., PIOTROWSKA A., GOŁASZEWSKA K., PIOTROWSKI T. T., KĄTCKI J., RATAJCZAK J., JUNG W., PRZESŁAWSKI T., WAWRO A., WÓJCIK M., GACA J.: GaAlAsSb/GaInAsSb/GaSb Structures for Thermophotovoltaic Cells. SPIE Int. Congress on Optics and Optoelectronics. Warsaw, Poland, 28.08-2.09.2005 (poster).
• [C20] SZERMER M., KOŁODZIEJSKI J., SZCZĘSNY J.: Dynamic Stability of Sigma/Delta ADCs and Their Immunity to Electromagnetic Disturbances. 5th Int. Workshop on Electromagnetic Compatibility of Integrated Circuits. Munich, Germany, 2005.
• [C21] ŚWIDERSKI J.: Support for Innovation and Technology Transfer in the Area of Electrical Engineering. International Day of Electrical Engineering. Warsaw, Poland, 10.06.2005 (inv. lecture, in Polish).
• [C22] ZABOROWSKI M., GRABIEC P., BARCZ A.: Manufacturing of Pt-Electrode by Wet Etching. Conf. Mater. for Advanced Metallization MAM'2005, Dresden, Germany, 6-9.03.2005 (poster).
• [PA1] PUŁTORAK J.: Semiconductor Source of Electroluminescent Radiation Pat. Appl. No. P.376612 (in Polish).
• [PA2] KĄTCKI J., ŚWIDERSKI J.: Vibration Micro-Transporter. Pat. RP No. P.334694 (in Polish).
• [PA3] PUŁTORAK J.: Electroluminescent Heterojunction Device. Pat. RP No. 18926 (in Polish).
• [PA4] PUŁTORAK J.: Electroluminescent Semiconductor Device. Pat. RP No. 189417 (in Polish).
• [PA5] PIOTROWSKI T., TWAROWSKI J.: Method to Measure Resistivity of Semiconductors. Pat. RP No. P337563.