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Prace Instytutu Technologii Elektronowej

2006 | z. 2 | 83-98
Tytuł artykułu

Department of High Pressure Research of Semiconductors

Autorzy
Misiuk, A.
Warianty tytułu
Języki publikacji
EN
Abstrakty
Słowa kluczowe
PL
EN
Wydawca

Czasopismo
Prace Instytutu Technologii Elektronowej
Rocznik
2006
Tom
z. 2
Strony
83-98
Opis fizyczny
Bibliogr. 89 poz., wykr.
Twórcy
autor
Misiuk, A.
  • Institute of Electron Technology, Al. Lotników 32/46, 02-668 Warsaw, Poland, misiuk@ite.waw.pl
Bibliografia
  • [P1] AKHMETOV V. D., MISIUK A., RICHTER H.: FTIR Study of Precipitation of Implanted Nitrogen in Cz-Si Annealed under High Hydrostatic Pressure. Solid State Phenom. 2005 No. 108-109 p. 157-162.
  • [P2] AKHMETOV V. D., MISIUK A., RICHTER H.: Pressure-Induced Transformations of Nitrogen Implanted in Silicon. phys. stat. sol. (a) 2006 vol. 203 p. 781-785.
  • [P3] ANTONOVA I. V., GULYAEV M. B., SKURATOV V. A., SOOTS R. A., OBODNIKOV V. I., MISIUK A., ZAUMSEIL P.: Pressure-Assisted Lateral Nanostructuring of the Epitaxial Silicon Layers with SeGe Quantum Wells. Solid State Phenom. 2006 vol. 114 p. 291-296.
  • [P4] ANTONOVA I. V., MISIUK A., BARCZ A., RATAJCZAK J.: Electrical and Structural Properties of Multiplayer Structures Formed by Implantation of Nitrogen or Oxygen and Annealed under High Pressure. J. Appl. Phys. 2006 No. 99 p. 33506-1-6
  • [P5] ANTONOVA I. V., MISIUK A., LONDOS C. A.: Electrical Characteristics of SOI-Like Structures Formed in Nitrogen or Oxygen Implanted Silicon Treated under High Pressure. [In] Silicon-on Insulator Technology and Devices XII, PV-2005-03, Ed. G. K. Celler, S. Cristalloveanu, J. G. Fossum, F. Ganiz, K. Izum, Y. W. Kim, 2005, p. 325-330.
  • [P6] ANTONOVA I. V., MISIUK A., LONDOS C., SURMA B., SMAGULOVA S. A., BUKOWSKI A., JUNG W., BARCZ A.: Pressure-Induced Formation of Electrically Active Centres in Irradiated Slilicon: Comparison of Electron and Neutron Irradiation. Vacuum 2005 vol. 77 p. 507-511.
  • [P7] BAK-MISIUK J., MISIUK A., SHALIMOV A., SURMA B., ZAVODINSKY V. G., GNIDENKO A. A., LAMENT-BIAŁEK B., WNUK A: The Structures Prepared by High Temperature-Pressure Treatment of Cz-Si Heavily Implanted with He+. J. Alloys Comp. 2005 No. 401 p. 231-237.
  • [P8] BAK-MISIUK J., MISIUK A., SURMA B., SHALIMOV A., LONDOS C. A.: Influence of Neutron Irradiation on Stress-Induced Oxygen Precipitation in Cz-Si. Solid State Phenom. 2005 No. 108-109 p. 169-174.
  • [P9] BAK-MISIUK J., SHALIMOV A., MISIUK A., HÄRTWIG J.: Defects in Czochralski Silicon Revealed by High Temperature-Pressure Treatment. Synchrotron Radiation in Natural Sci. 2005 No. 1-2 p. 66.
  • [P10] BAK-MISIUK J., SHALIMOV A., MISIUK A., HÄRTWIG J., TRELA J.: Revealing the Structural Disturbances in Czochralski Silicon by High Temperature-Pressure Treatment. J. Alloys Comp. 2005 No. 401 p. 64-68.
  • [P11] EMTSEV V. V., ANDREEV B. A., EMTSEV V. V. JR, OGANESYAN G. A., KRYZHKOV D. I., MISIUK A., LONDOS C. A., POTSIDI M. S.: "New Donors" in Czochralski Grown Silicon Annealed at T > 600oC under Compressive Stress. Solid State Phenom. 2005 No. 108-109 p. 181-186.
  • [P12] JUNG W., MISIUK A., LONDOS C. A.: Pressure Stimulated Creation of Oxygen-Related Defects in Oxygen-Implanted and Neutron-Irradiated Silicon. Vacuum 2005 vol. 78 p. 199-203.
  • [P13] JUNG W., MISIUK A., LONDOS C. A., YANG D., ANTONOVA I. V., PRUJSZCZYK M.: Influence of High Pressure Annealing on Electrical Properties of Surface Layer on Neutron Irradiated or Germanium Doped Cz-Si. Optica Appl. 2005 vol. 35 No. 3 p. 393-398.
  • [P14] JUNG W., MISIUK A., RATAJCZAK J., BARCZ A.: Effect of Heat Treatment at Enhanced Pressure on Electrical and Structural Properties of Silicon Surface Layer Co-Implanted with Hydrogen and Helium Ions. Opto-Electron. Rev. 2005 No. 13 p. 31-34.
  • [P15] KUCYTOWSKI J., WOKULSKA K., MISIUK A., LONDOS C. A.: The Influence of Irradiation with Neutrons on the Lattice Parameters in Si-Cz Single Crystals. 6th Meet. of Synchrotron Radiation Users (KSUPS), Warsaw, Poland, 8-9.09.2005. Bull. of the Polish Synchrotron Radiation Soc. 2005 vol. 4 No. 1-2 p. 30-31 (in Polish).
  • [P16] LONDOS C. A., ANTONARAS G. J., POTSIDI M. S., MISIUK A., ANTONOVA I. V., EMTSEV V. V.: Production and Evolution of Defects in Neutron-Irradiated Si Subjected to Thermal Pre-Treatments under Hydrostatic Pressure. J. Phys.: Condensed Matter. 2005 No. 17 p. S2341-S2349.
  • [P17] LONDOS C. A., ANTONARAS G. D., POTSIDI M. S., MISIUK A., EMTSEV V. V.: The Effect of Thermal Treatments on the Annealing Behaviour of Oxygen-Vacancy Complexes in Irradiated Carbon-Doped Silicon. Solid State Phenom. 2005 No. 108-109 p. 205-210.
  • [P18] MISIUK A.: Buried Nano-Structured Layers in Silicon Implanted with Helium and Subjected to High Temperature-Pressure Treatment. [In] Physics, Chemistry and Application of Nanostructures, Ed. V. E. Borisenko, S. V. Gaponenko, V. S. Gurin, World Sci. 2005, p. 108-111.
  • [P19] MISIUK A.: Effect of High Hydrostatic Pressure during Annealing on Oxygen Containing (Oxygen Implanted) Silicon. Progress in Mater. Sci. Res. (by NOVA) (submit. to publ.).
  • [P20] MISIUK A., BARCZ A., SURMA B., BAK-MISIUK J.: Effect of Pressure on Emission of Hydrogen from Silicon Co-Implanted with Hydrogen and Helium. [In] Hydrogen Materials Science and Chemistry of Carbon Nanomaterials, ICHMS 2005, Ed. D. V. Schur, S. Yu. Zaginaichenko, T. N. Veziroglu, 2005, p. 92-93.
  • [P21] MISIUK A., BAK-MISIUK J., SURMA B., OSINNIY W., SZOT M., STORY T., JAGIELSKI J.: Structure and Magnetic Properties of Si:Mn Annealed under Enhanced Hydrostatic Pressure. J. Alloys Comp. 2006 vol. 423 p. 201-204.
  • [P22] MISIUK A., RATAJCZAK A., KĄTCKI J., ANTONOVA I. V.: Impact of Hydrostatic Pressure during Annealing of Si:O on Creation of SIMOX-Like Structures, Science and Technology of Semiconductor-On-Insulator Structures and Devices Operating in a Harsh Environment, Kluwer Academic Publish, The Netherlands, D. Flandre et al. (eds.), 2005 p. 91-96.
  • [P23] MISIUK A., SHALIMOV A., BAK-MISIUK J., SURMA B., WNUK A., ANTONOVA I. V., ZAVODINSKY V. G., GNIDENKO A. A.: Porous-Like Structures Prepared by Temperature-Pressure Treatment of Heavily Hydrogenated Silicon. phys. stat. sol. (c) 2005 No. 2 p. 3329-3333.
  • [P24] MISIUK A., SHALIMOV A., SURMA B., BAK-MISIUK J., WNUK A.: Effect of Annealing under Enhanced Hydrostatic Pressure on the Microstructure of Cz-Si:H, He. J. Alloys Compounds 2005 No. 401 p. 205-211.
  • [P25] MISIUK A., SURMA B., BAK-MISIUK J.: Stress-Dependent Out-Annealing of Defects in Self-Implanted Silicon. Solid State Phenom. 2005 No. 108-109 p. 351-356.
  • [P26] MISIUK A., SURMA B., BAK-MISIUK J., ANTONOVA I. V., SMAGULOVA S. A.: Effect of Enhanced Pressure during Annealing on the Creation of Defects in Electron-Irradiated Silicon. Vacuum 2005 vol. 77 p. 513-517.
  • [P27] MISIUK A., SURMA B., BAK-MISIUK J., BARCZ A., JUNG W., OSINNIY W., SHALIMOV A.: Effect of Pressure Annealing on Structure of Si:Mn. Mater. Sci. Semicond. Process. 2006 No. 9 p. 270-274.
  • [P28] MISIUK A., SURMA B., BAK-MISIUK J., RAINERI V.: Buried Nano-Structured Layers in High Temperature-Pressure Treated Si:He. Solid State Phenom. 2006 vol. 114 p. 285-290.
  • [P29] MISIUK A., SURMA B., BARCZ A., ORLINSKA K., BAK-MISIUK J., ANTONOVA I. V., DUB S.: Strain and Defect Engineering in Si/Si3N4/Si by High Temperature-Pressure Treatment. Mater. Sci. Eng. B. 2005 vol. 124-125 p. 174-178.
  • [P30] MISIUK A., SURMA B., LONDOS C. A., BAK-MISIUK J., WIERZCHOWSKI W., WIETESKA K., GRAEFF W.: Oxygen Precipitation and Creation of Defects in Neutron Irradiated Cz-Si Annealed under High Pressure. phys. stat. sol. (c) 2005 No. 2 p. 1812-1816.
  • [P31] MISIUK A., SURMA B., ZAVODINSKY V. G., GNIDENKO A. A.: Buried Nano-Layers in Silicon Co-Implanted with H2+/ He+ and Annealed under High Hydrostatic Pressure. Rev. on Advanc. Mater. Sci. 2005 No. 10 p. 73-78.
  • [P32] MISIUK A., YANG D., SURMA B., LONDOS C. A., BAK-MISIUK J.: Defects in Ge-Doped Cz-Si Annealed under High Stress. Mater. Sci. Semicond. Process. 2006 No. 9 p. 82-87.
  • [P33] MURIN L. I., LINDSTRÖM J. L., MARKEVICH V. P., MISIUK A., LONDOS C. A.: Thermal Double-Donor Annihilation and Oxygen Precipitation at around 650oC in Czochralski-Grown Si: Local Vibrational Mode Studies. J. Phys.: Condens. Matter. 2005 No. 17 p. S2237-S2246.
  • [P34] OVSYANNIKOV S. V., SHCHENNIKOV V. V., SHAIDAROVA N. A., SHCHENNIKOV V. V. JR, MISIUK A., YANG D.: High-Pressure Thermopower Characterization of Silicon Single Crystal Substrates (Cz-Si:N). J. Physics D. (submit. to publ.).
  • [P35] SHALIMOV A., BAK-MISIUK J., KANIEWSKI J., MISIUK A., DOMAGALA J., KOWALCZYK E.: Strain State of InAlAs/InP Layers Subjected to High Pressure Treatment. phys. stat. sol. (c) 2005 No. 2 p. 1948-1952.
  • [P36] SHCHENNIKOV V. V. JR, OVSYANNIKOV S. V., SHCHENNIKOV V. V., SHAIDAROVA N. A., MISIUK A., SMIRNOV S. V., YANG D.: Variations of High-Pressure Thermoelectric and Mechanical Properties of Si Single Crystals under Doping with N and P-T Pre-Treatment. Mater. Sci. Eng. A (submit. to publ.).
  • [P37] STEINMAN E. A., TERESHCHENKO A. N., VDOVIN V. I., MISIUK A.: Dislocation Related PL of Multi-Step Annealed Cz-Si Samples. Solid State Phenom. 2005 No. 108-109 p. 773-778.
  • [P38] SURMA B., MISIUK A., WNUK A., LONDOS C. A., BUKOWSKI A.: Optical Studies of Defects Generated in Neutron-Irradiated Cz-Si during HP-HT Treatment. Cryst. Res. Technol. 2005 vol. 40 p. 471-476.
  • [P39] TYSCHENKO I. E., TALOCHKIN A. B., VANDYSHEV E. N., CHERKOV A. G., MISIUK A.: The Properties of Hydrostatically Strained Ge and Si Nanocrystals in Silicon Dioxide Matrix. Solid State Phenom. 2005 No. 108-109 p. 39-44.
  • [P40] TYSCHENKO I. E., ZHURAVLEV K. S., CHERKOV A. G., MISIUK A., POPOV V. P.: Cavity Effect in Hydrogen Ion Implanted Silicon-On-Insulator Structures. Solid State Phenom. 2005 No. 108-109 p. 477-482.
  • [P41] WIERZCHOWSKI W. K., MISIUK A., WIETESKA K., BAK-MISIUK J., JUNG W., SHALIMOV A., GRAEFF W., PRUJSZCZYK M.: Defect Structure of Czochralski Silicon Co-Implanted with Helium and Hydrogen and Treated at High Temperature-Pressure. Semicond. Phys. Quantum Electron. 2005 vol. 8 No. 2 p. 7-11.
  • [P42] WIETESKA K., WIERZCHOWSKI W., MISIUK A., SURMA B., GRAEFF W., ANTONOVA I. V., PRUJSZCZYK M.: Synchrotron Topographic and Photoluminescence Investigations of Porous Layer in HT-HP Treated Silicon Implanted with Deuterium Ions. phys. stat. sol. (c) 2005 No. 2 p. 3471-3475.
  • [P43] WIETESKA K., WIERZCHOWSKI W., ŻYMIERSKA D., AULEYTNER J., GRAEFF W., MISIUK A., CHOIŃSKI J.: Synchrotron Studies of HP-HT Treated Silicon Implanted with 42 MeV Nitrogen Ions. Synchrotron Radiation in Natural Sci. 2005 No. 1-2 p. 40-41.
  • [P44] ZAVODINSKY V. G., GNIDENKO A. A., MISIUK A., BAK-MISIUK J.: Ab inito Simulation of High Pressure Influence on He-H Interaction in Silicon. Vacuum 2005 vol. 78 p. 247–249.
  • [C1] AKHMETOV V. D., MISIUK A., RICHTER H.: FTIR Study of Precipitation of Implanted Nitrogen in Cz-Si Annealed under High Hydrostatic Pressure. 11th Int. Autumn Meet., GADEST 2005. Giens Peninsula, France, 25-30.09.2005 (poster).
  • [C2] ANTONOVA I. V., GULYAEV M. B., SKURATOV V. A., MISIUK A., ZAUMSEILL P.: Pressure-Assistance Lateral Nanostructuring of the Epitaxial Silicon Layers with SeGe Quantum Wellposter E-MRS 2005 Fall Meet. Warsaw, Poland, 5-9.09.2005 (poster).
  • [C3] ANTONOVA I. V., MISIUK A., LONDOS C. A.: Electrical Behavior of SOI- Like Structures Formed under High Pressure in Nitrogen or Oxygen Implanted Silicon. 20th AIRAPT – 43rd EHPRG Conf. Karlsruhe, Germany, 27.06-1.07.2005 (poster).
  • [C4] BAK-MISIUK J., MISIUK A., SURMA B., SHALIMOV A., LONDOS C. A.: Influence of Neutron Irradiation on Stress-Induced Oxygen Precipitation in Cz-Si. 11th Int. Autumn Meet. GADEST 2005. Giens Peninsula, France, 25-30.09.2005 (poster).
  • [C5] BAK-MISIUK J., SHALIMOV A., LUSAKOWSKA E., ORLIŃSKA K., VAGOVIČ P., MISIUK A., ZHURAVLEV K. S., BAKAROV A. K., TOROPOV A. I.: Defect Structure of Be Doped AlxGa1-xAs/GaAs Layers. 23rd Int. Conf. on Defects in Semiconductors ICDS – 23. Awaji Island, Japan, 24-29.07.2005 (poster).
  • [C6] BAK-MISIUK J., SHALIMOV A., MISIUK A., HÄRTWIG J.: Defects in Czochralski Silicon Revealed by High Temperature-Pressure Treatment. 6th Polish Meet. of Synchrotron Radiation Users (KSUPS). Warsaw, Poland, 8-9.09.2005 (poster, in Polish).
  • [C7] BAK-MISIUK J., SHALIMOV A., MISIUK A., KANIEWSKI J., MUSZALSKI J.: Transformation of Defects in Heteroepitaxial InGaAs Layers Grown on InP Substrate. X Int. Conf. on Physics and Technology of Thin Films. Ivano-Frankivsk, Ukraine, 16-21.05.2005 (commun.).
  • [C8] BAK-MISIUK J., SHALIMOV A., MISIUK A., KANIEWSKI J., MUSZALSKI J., WIERZCHOWSKI W., WIETESKA K., GRAEFF W.: Defect Structure of In(GaAl)As/InP Layers Subjected to High Pressure Treatment. E-MRS 2005 Spring Meet. Strasbourg, France, 31.05-3.06.2005 (poster).
  • [C9] BAK-MISIUK J., SHALIMOV A., ORLIŃSKA K., MISIUK A., KANIEWSKI J., LUSAKOWSKA E., MUSZALSKI J., WIERZCHOWSKI W., WIETESKA K., GRAEFF W.: Structural Changes in In(Ga,Al)As/ /InP System Annealed under High Hydrostatic Pressure. 47 Crystallography Workshop. Wrocław, Poland, 30.06-1.07.2005 (abstr., poster).
  • [C10] EFROS B., SHISHKOVA N., MISIUK A., PRUDNIKOV A.: Property and Structure Study of System SI-O (SIOX) in DAC at Submega Barr Pressure. 11th Int. Autumn Meet. GADEST 2005. Giens Peninsula, France, 25-30.09.2005 (poster).
  • [C11] EMTSEV V. V., ANDREEV B. A., EMTSEV V. V. JR, OGANESYAN G. A., KRYZHKOV D. I., MISIUK A., LONDOS C. A., POTSIDI M. S.: "New Donors" in Czochralski Grown Silicon Annealed at T > 600oC under Compressive Stress. 11th Int. Autumn Meet. GADEST 2005. Giens Peninsula, France, 25-30.09.2005 (poster).
  • [C12] GNIDENKO A. A., ZAVODINSKY V. G., MISIUK A., BAK-MISIUK J.: Helium-Hydrogen Interaction in Silicon. 23rd Int. Conf. on Defects in Semiconductors ICDS – 23. Awaji Island, Japan, 24-29.07.205 (poster).
  • [C13] GNIDENKO A. A., ZAVODINSKY V. G., MISIUK A., BAK-MISIUK J.: First-Principles Calculation of He-H Interaction in C-Si. XL Zakopane, Poland School of Physics, Int. Symp.: Breaking Frontiers: Submicron Structures in Physics and Biology. Zakopane, Poland, 20-25.05.2005 (poster).
  • [C14] JUNG W., MISIUK A., ANTONOVA I. V., LONDOS C. A., YANG D., PRUJSZCZYK M.: The Influence of High Pressure Annealing on Electrical Properties of Surface Layer of Si Irradiated with Neutrons or Germanium Doped. X Sem. "Surface and Thin Film Structures – 2005". Szklarska Poręba, Poland, 17-21.05.2005 (poster).
  • [C15] KUCYTOWSKI J., WOKULSKA K., MISIUK A., LONDOS C. A.: The Influence of Irradiation with Neutrons on the Lattice Parameters in Si-Cz Single Crystals. 6th Polish Meet. of Synchrotron Radiation Users (KSUPS). Warsaw, Poland, 8-9.09.2005 (poster, in Polish).
  • [C16] LAMENT-BIAŁEK B., WNUK A., SURMA B., MISIUK A.: Influence of Annealing under High Pressure on Amorphous Silicon Layer in Cz-Si Heavily Implanted with H2+. X Sem. "Surface and Thin Film Structures – 2005". Szklarska Poręba, Poland, 17-21.05.2005 (commun.).
  • [C17] LONDOS C. A., ANTONARAS G. J., POTSIDI M. S., MISIUK A., ANTONOVA I. V., EMTSEV V. V.: The Effect of Thermal Treatments on the Annealing Behavior of Oxygen-Vacancy Complexes in Irradiated Carbon-Doped Silicon. 11th Int. Autumn Meet. GADEST 2005, Giens Peninsula, France, 25-30.09.2005 (poster).
  • [C18] MISIUK A.: Buried Nano-Layers Prepared in Single Crystalline Silicon by Co-Implantation of Cz-Si with Hydrogen/Helium and Treatment under High Hydrostatic Pressure. 2nd Int. Conf. Nano- materials and Nanotechnologies NN 2005. Crete, Greece, 14-18.06.2005 (abstr., commun.)
  • [C19] MISIUK A., BARCZ A., SURMA B., ANTONOVA I. V., DUB S.: Strain and Defect Engineering in Si/Si3/N4/Si by High Temperature-Pressure Treatment. E-MRS 2005 Spring Meet. Strasbourg, France, 31.05-3.06.2005 (poster).
  • [C20] MISIUK A., BAK-MISIUK J., ORLIŃSKA K., BARCZ A., SURMA B., PRUJSZCZYK M.: Structure of Silicon Implanted with Nitrogen and Annealed under Elevated Hydrostatic Pressure. 47 Crystallography Workshop. Wrocław, Poland, 30.06-1.07.2005 (poster, in Polish).
  • [C21] MISIUK A., BAK-MISIUK J., SURMA B.: Nanostructures Prepared from Heavily Hydrogen Doped Silicon by Annealing under High Pressure. X Int. Conf. on Physics and Technology of Thin Films. Ivano-Frankivsk, Ukraine, 16-21.05.2005 (commun.).
  • [C22] MISIUK A., BAK-MISIUK J., SURMA B., BARCZ A., JAGIELSKI J.: Effect of Pressure Annealing on Structural of Magnetic Si:Mn. 11th Int. Conf. on Defects: Recognition, Imaging and Physics in Semiconductors (DRIP XI). Beijing, China, 15-19.09.2005 (poster).
  • [C23] MISIUK A., CIOSEK J., BAK-MISIUK J., SURMA B., RATAJCZAK J., SHALIMOV A., ZAVODINSKY V. G., KUDŁA A.: Influence of Enhanced Temperature Pressure on Structural Transformations in Pre-Annealed Cz-Si. E-MRS 2005 Fall Meet. Warsaw, Poland, 5-9.09.2005 (poster).
  • [C24] MISIUK A., DUB S., SURMA B., SHCHENNIKOV V. V.: Structural Transformations in Pre-Annealed Czochralski Silicon Treated under Enhanced Temperature-Pressure. 20th AIRAPT – 43rd EHPRG Conf. Karlsruhe, Germany, 27.06-1.07.2005 (poster).
  • [C25] MISIUK A., SHALIMOV A., BAK-MISIUK J., SURMA B., PRUJSZCZYK M., JAGIELSKI J.: Structure and Related Properties Si:Mn Annealed under Enhanced Hydrostatic Pressure. E-MRS 2005 Fall Meet. Warsaw, Poland, 5-9.09.2005 (commun.).
  • [C26] MISIUK A., SURMA B., BAK-MISIUK J.: Buried Nano-Structured Layers in High Temperature Pressure Treated Cz-Si:He. E-MRS 2005 Fall Meet. Warsaw, Poland, 5-9.09.2005 (commun.).
  • [C27] MISIUK A., SURMA B., BAK-MISIUK J.: Stress-Dependent Out-Annealing of Defects in Self-Implanted Silicon. 11th Int. Autumn Meet. GADEST 2005. Giens Peninsula, France, 25-30.09.2005 (poster).
  • [C28] MISIUK A., SURMA B., BAK-MISIUK J., ANTONOVA I. V.: The Structures Prepared by Annealing of Nitrogen Implanted Silicon (Si:N) under High Hydrostatic Pressure. 23rd Int. Conf. on Defects in Semiconductors ICDS – 23. Awaji Island, Japan, 24-29.07.2005 (abstr., poster).
  • [C29] MISIUK A., TYSCHENKO I. E.: Optical Properties of Ge and Si Nanocrystals Prepared by High Pressure Processing of Silicon Dioxide Implanted with Germanium/Silicon. Nanotechnologies and Nanomaterials, Exhibition-Seminar. Warsaw, Poland, 25-27.10.2005 (commun.).
  • [C30] MISIUK A., YANG D., SURMA B: Defects in Ge-Doped Cz-Si Annealed under High Stress. 11th Int. Conf. on Defects: Recognition, Imaging and Physics in Semiconductors (DRIP XI). Beijing, China, 15-19.09.2005 (commun.).
  • [C31] MISIUK A., ZHURAVLEV K. S., WIŚNIEWSKI Z., BURBAEV T. M., KURBATOV V. A., PRUJSZCZYK M.: Tailoring of Photoluminescence of Czochralski Silicon by High Temperature-Pressure Treatment. 20th AIRAPT – 43rd EHPRG Conf. Karlsruhe, Germany, 27.06-1.07.2005 (abstr., commun.).
  • [C32] ORLINSKA K., ADIKIMENAKIS A., VAGOVIČ P., MISIUK A.: Deffect Structure of Silicon Crystals Implanted with Nitrogen – a Study of Si:N Annealed under High Hydrostatic Pressure. E-MRS 2005 Fall Meet. Warsaw, Poland, 5-9.09.2005 (poster.).
  • [C33] OVSYANNIKOV S. V., SHAIDAROVA N. A., SHCHENNIKOV V. V. JR, SHAMIN S. N., MISIUK A., ANTONOVA I. V., YANG D. D., SHCHENNIKOV V. V.: Micro-Characterisation of Si Wafers by High-Pressure Termopower Technique. 23rd Int. Conf. on Defects in Semiconductors ICDS – 23. Awaji Island, Japan, 24-29.07.205 (poster).
  • [C34] OVSYANNIKOV S. V., SHCHENNIKOV V. V., SHAIDAROVA N. A., SHCHENNIKOV V. V. JR, MISIUK A., YANG D.: Dependence of High-Pressure Thermoelectric and Mechanical Properties of Cz-Si on Nitrogen Doping and P-T Pre-Treatment. 20th AIRAPT – 43rd EHPRG Conf. Karlsruhe, Germany, 27.06-1.07.2005 (commun.).
  • [C35] OVSYANNIKOV S. V., SHCHENNIKOV V. V., SHAIDAROVA N. A., SHCHENNIKOV V. V. JR, MISIUK A., YANG D., SHAMIN S. N.: Characterisation of Oxygen Defects in Si by High-Pressure Thermopower Technique. 11th Int. Conf. on Defects: Recognition, Imaging and Physics in Semiconductors (DRIP XI). Beijing, China, 15-19.09.2005 (poster).
  • [C36] RZODKIEWICZ W., KUDŁA A., MISIUK A., SURMA B., BĄK-MISIUK J.: Structural Characterization of Self-Implanted Si after HT-HP Treatment. E-MRS 2005 Spring Meet. Strasbourg, France, 31.05-3.06.2005 (poster).
  • [C37] SHCHENNIKOV V. V. JR, OVSYANNIKOV S. V., SHCHENNIKOV V. V., SHAIDAROVA N. A., MISIUK A., YANG D.: Variations of High-Pressure Thermoelectric and Mechanical Properties of Si Single Crystals under Doping with N and Pre-Treatment. 10th Int. Symp. on Physics of Materials ISPMA 10. Prague, Czech Republic, 30.08-2.09.05 (poster).
  • [C38] STEINMAN E. A., TERESHCHENKO A. N., VDOVIN V. I., MISIUK A.: Dislocation Related PL of Multi-Step Annealed Cz-Si Samples. 11th Int. Autumn Meet., GADEST 2005, Giens Peninsula, France, 25-30.09.2005 (poster).
  • [C39] TYSCHENKO I. E., TALOCHKIN A. B., VANDYSHEV E. N., CHERKOV A. G., MISIUK A.: The Properties of Hydrostatically Strained Ge and Si Nanocrystals in Silicon Dioxide Matrix. 11th Int. Autumn Meet., GADEST 2005. Giens Peninsula, France, 25-30.09.2005 (commun.).
  • [C40] TYSCHENKO I. E., ZHURAVLEV K. S., CHERKOV A. G., MISIUK A., POPOV V. P.: Cavity Effect in Hydrogen Ion Implanted Silicon-On-Insulator Structures. 11th Int. Autumn Meet., GADEST 2005. Giens Peninsula, France, 25-30.09.2005 (poster).
  • [C41] VAGOVIČ P., BAK-MISIUK J., MISIUK A., SHALIMOV A., ORLINSKA K., KOVACEVIČ I., PIVAČ B., PRUJSZCZYK M.: Defects in [Gamma] Irradiated Cz-Si Annealed under High Pressure. XX Congress of the Int. Union of Crystallography. Florence, Italy, 23-31.08.05 (poster).
  • [C42] VARYUKHIN B., EFROS B., IVCHENKO V., EFROS N., POPOVA E., MISIUK A.: Atomic Structure of Ultra Fine Grained Metals after Intensive External Influences at Study High Pressures. 20th AIRAPT – 43rd EHPRG Conf. Karlsruhe, Germany, 27.06-1.07.2005 (poster).
  • [C43] WIETESKA K., WIERZCHOWSKI W., SURMA B., MISIUK A., YANG D., GRAEFF W.: X-Ray Topographic and Photoluminescence Studies of HT-HP Treated Nitrogen Doped Silicon Crystals. 20th AIRAPT – 43rd EHPRG Conf. Karlsruhe, Germany, 27.06-1.07.2005 (poster).
  • [C44] WIETESKA K., WIERZCHOWSKI W., ŻYMIERSKA D., AULEYTNER J., GRAEFF W., MISIUK A., CHOIŃSKI J.: Synchrotron Studies of HP-HT Treated Silicon Implanted with 42 MeV Nitrogen Ions. 6th Polish Meet. of Synchrotron Radiation Users (KSUPS). Warsaw, Poland, 8-9.09.2005 (poster).
  • [PA1] MISIUK A., RATAJCZAK J., ANTONOVA I. V., POPOV V. P.: A Method to Fabricate Semiconductor Structures. Pat. RP No. P.335497 (in Polish).
Typ dokumentu
Bibliografia
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Identyfikator YADDA
bwmeta1.element.baztech-article-BWA0-0034-0005
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