Department of Physics and Technology of Low-Dimensional Structures

• Autorzy: Bugajski, M.
• Języki publikacji: EN

Słowa kluczowe

PL

Instytut Technologii Elektronowej; działalność naukowo-badawcza

EN

Institute of Electron Technology; scientific activity

• Czasopismo: Prace Instytutu Technologii Elektronowej
• Rocznik: 2006
• Tom: z. 2
• Strony: 27-42
• Opis fizyczny: Bibliogr. 68 poz., il., wykr.

Twórcy

autor

Bugajski, M.

• Institute of Electron Technology, Al. Lotników 32/46, 02-668 Warsaw, Poland,

Bibliografia

• [P1] BĄK-MISIUK J., ORLIŃSKA K., KANIEWSKI J., SHALIMOV A., LUSAKOWSKA E., MISIUK A., MUSZALSKI J., WIERZCHOWSKI W., WIETESKA K., GRAEFF W.: Structural Characterization of InxGa1-xAs/InP Layers under Different Stresses. Proc. of E-MRS 2005 Spring Meet., Strasbourg, France, 31.05-3.06.2005.
• [P2] BUGAJSKI M., MROZIEWICZ B., REGIŃSKI K., MUSZALSKI J., KOSIEL K., ZBROSZCZYK M., OCHALSKI T., PIWOŃSKI T., WAWER D., SZERLING A., KOWALCZYK E., WRZESIŃSKA H., GÓRSKA M.: High Power QW SCH InGaAs/GaAs Lasers for 980 nm Band. Bull. of the PAS Technical Sciences 2005 No. 53 p. 113.
• [P3] GACA J., WÓJCIK M., TUROS A., STRUPIŃSKI W., JASIK A., ZYNEK J., KOSIEL K., EICHHORN F., PROKERT F.: Studies of the Profile of Chemical Composition and Lateral Uniformity of Quantum Wells Made of AIII BV Semiconductor Compounds. Mat. Elektron. 2005 vol. 33 No. 1/4 (in Polish).
• [P4] GÓRSKA M., WRZESIŃSKA H., SZERLING A., HEJDUK K., ŁYSKO J. M.: HBV Deep Mesa Etching in the InGaAs/InAlAs/AlAs Heterostructure over InP Substrate. Mater. Sci. - Poland 2005 No. 23 p. 1.
• [P5] GÓRSKA M., WRZESIŃSKA H., SZERLING A., HEJDUK K., ŁYSKO J. M.: HBV Deep Messa Etching in the InGaAs/InAlAs/AlAs Heterostructure over InP Substrate. Proc. of the VIII Sci. Conf. "Electron Technology" ELTE 2004, Stare Jabłonki, Poland, 19-22.04.2004. CD ROM 2005 p. 809-814.
• [P6] HEJDUK K., PIERŚCIŃSKI K., RZODKIEWICZ W., MUSZALSKI J., KANIEWSKI J.: Dielectric Coatings for Infrared Detectors. Optica Appl. 2005 vol. 35 No. 3 p. 437-448.
• [P7] HENINI M., BUGAJSKI M.: Advances in Self-Assembled Semiconductor Quantum Dot Lasers. Microelectron. J. 2005 No. 36 p. 950.
• [P8] KAMIŃSKA E., PIOTROWSKA A., GOŁASZEWSKA K., ŁUKASIEWICZ R., SZCZĘSNY A., KOWALCZYK E., JAGODZIŃSKI P., GUZIEWICZ M., KUDŁA A., BARCZ A., JAKIEŁA R.: Thermally Stable Transparent Ru-SiO Schottky Contacts for n-Type GaN and AlGaN. Mater. Res. Soc. Symp. Proc. Vol. 831, 2005 Materials Research Society. E3.41.1-E3.41.6.
• [P9] KAMIŃSKA E., PIOTROWSKA A., KOSSUT J., BARCZ A., BUTKUTE R., DOBROWOLSKI R., DYNOWSKA E., JAKIEŁA R., ŁUKASIEWICZ R., ALESZKIEWICZ M., WOJNAR P., KOWALCZYK E.: Transparent p-Type ZnO Films Obtained by Oxidation of Sputter-Deposited Zn3N2. Solid State Commun. 2005 vol. 135 No. 1-2 p. 11-15.
• [P10] KAMIŃSKA E., PIOTROWSKA A., KOSSUT J., BUTKUTE R., DOBROWOLSKI R., ŁUKASIEWICZ R., BARCZ A., JAKIEŁA R., DYNOWSKA E., PRZEŹDZIECKA E., ALESZKIEWICZ M., KOWALCZYK E.: P-Type Conducting ZnO: Fabrication and Characterization. phys. stat. sol. (c) 2005 vol. 2 No. 3 p. 1119-1124.
• [P11] KANIEWSKI J., MUSZALSKI J., PAWLUCZYK J., PIOTROWSKI J.: Resonant Cavity Enhanced InGaAs Photodiodes for High Speed Detection of 1.55 µm Infrared Radiation. Proc. SPIE 2005 no. 5783.
• [P12] KOSMALA M., REGIŃSKI K., KOSIEL K.: Some Problems of MBE Growth of Epitaxial Structures of Semiconductor Lasers for the Band 980 nm. Optica Appl. 2005 vol. 35 No. 3 p. 399-405.
• [P13] KOWALCZYK E., ORNOCH L., SZERLING A., MROZIEWICZ B.: Thermally Induced Changes of Broad Contact Pulse Operated SQW SCH Laser Spectra. Optica Appl. 2005 vol. 35 no. 3 p. 573-578.
• [P14] KOZŁOWSKA A., WEIK F., TOMM J. W., MALĄG A., LATOSZEK M., WAWRZYNIAK P., TEODORCZYK M., DOBRZAŃSKI L., ZBROSZCZYK M., BUGAJSKI M.: Thermal Properties of High-Power Diode Lasers Investigated by Micro-Thermography. Proc. SPIE, Photonic West 2005.
• [P15] KOZŁOWSKA A., LATOSZEK M., TOMM J. W., WEIK F., ELSAESSER T., ZBROSZCZYK M., BUGAJSKI M., SPELLENBERG B., BASSLER M.: Analysis of Thermal Images from Diode Lasers: Temperature Profiling and Reliability Screening. Appl. Phys. Lett. 2005 vol. 86 p. 203503.
• [P16] KUCHARSKI K., TOMASZEWSKI D., GRODNER M., DUTKIEWICZ W., GRABIEC P., HEJDUK K., KOCIUBIŃSKI A., MALESIŃSKA J., KOKOSZKA A., OBRĘBSKI D., SZYNKA J.: MPW Service for Manufacturing of CMOS ASICs in a National Center of Silicon Micro- and Nano-Technology. Proc. of the VIII Sci. Conf. "Electron Technology" ELTE 2004, Stare Jabłonki, Poland, 19-22.04.2004. CD ROM 2005 p. 361-364.
• [P17] MROZIEWICZ B.: Semiconductor Lasers Are Still of Interest to Science and Industry. Part I. Bipolar Lasers - Technology Is Catching up with the Market. Elektronika 2005 No. 5 p. 30 (in Polish).
• [P18] MROZIEWICZ B.: Semiconductor Lasers Are Still of Interest to Science and Industry. Part II. Unipolar (Quantum Cascade Lasers - New Prospects for Optoelectronics. Elektronika 2005 No. 6 p. 35 (in Polish).
• [P19] MROZIEWICZ B., PIWONSKI T., KOWALCZYK E., SZERLING A., LEWANDOWSKI S. J.: External Cavity Diode Lasers with Ridge-Waveguide Type Broad Contact Semiconductor Optical Amplifiers. Proc. SPIE 2005 No. 5958.
• [P20] OCHALSKI T., GRZEGORCZYK A., RUDZINSKI M., LARSEN P. K., KOWALCZYK E., HOLTZ P. O., BERGMAN P., PASKOV P. P.: Optical Study of AlGaN/GaN Based HEMT Structures. phys. stat. sol. (c) 2005 vol. 2 p. 2791.
• [P21] OCHALSKI T. J., GRZEGORCZYK A., RUDZINSKI M., LARSEN P. K., HOLTZ P. O., BERGMAN P., PASKOV P. P.: Optical Study of AlGaN/GaN Based HEMT Structures Grown on Sapphire and SiC. phys. stat. sol. (a) 2005 vol. 2 p. 1300.
• [P22] OCHALSKI T. J., PIWONSKI T., WAWER D., PIERŚCIŃSKI K., BUGAJSKI M., KOZŁOWSKA A., MALĄG A., TOMM J.: Thermoreflectance and Micro-Raman Measurements of the Temperature Distributions in Broad Contact Laser Diodes. Optica Appl. 2005 vol. 35 no. 3 p. 479-484.
• [P23] ORNOCH L., KOWALCZYK E., MROZIEWICZ B.: Analysis of Thermal Conditions of Pulse Operated SQW SCH Lasers. Optica Appl. 2005 vol. 35 No. 3 p. 591-595.
• [P24] PIERŚCIŃSKI K., OCHALSKI T., BUGAJSKI M.: An Analysis of Mounting Strain in Semiconductor Structures by Means of Spatially Resolved Optical Modulation Techniques. Optica Appl. 2005 vol. 35 No. 3 p. 605-610.
• [P25] PIWOŃSKI T., HOULIHAN J., BUSCH T., HUYET G.: Delay-Induced Excitability. Phys. Rev. Lett. 2005 vol. 95 p. 040601.
• [P26] PIWOŃSKI T., WAWER D., SZYMAŃSKI M., OCHALSKI T., BUGAJSKI M.: Thermoreflectance Study of Temperature Distribution on the Unable Resonator Semiconductor Laser Mirrors. Optica Appl. 2005 vol. 35 No. 3 p. 611-617.
• [P27] PRZESŁAWSKI T., WOLKENBERG A., KANIEWSKI J., REGIŃSKI K., JASIK A.: Magnetic Field Sensors on Undoped In0.53Ga0.47As/InP(SI) Heterostructures Fabricated by MBE and MOCVD. Optica Appl. 2005 vol. 35 No. 3 p. 627-634.
• [P28] RYMUZA Z., WRZESIŃSKA H.: Considerations on Nanomechanical and Tribological Behaviours of Ultrathin Superlattice Films Deposited on Silicon. Tren i Iznos (submit. to print).
• [P29] SHALIMOV A., BĄK-MISIUK J., KANIEWSKI J., MISIUK A., DOMAGALA J., KOWALCZYK E.: Strain State of InAlAs/InP Layers Subjected to High Pressure Treatment. phys. stat. sol. (c) 2005 No. 2 p. 1948-1952.
• [P30] SHALIMOV A., BĄK-MISIUK J., KANIEWSKI J., TRELA J., WIERZCHOWSKI W., WIETESKA K., GRAEFF W.: Defect Structure of InAlAs/InP Layers. J. Alloys a. Compounds 2005 No. 401 p. 221.
• [P31] SZERLING A., KOSIEL K., WÓJCIK-JEDLIŃSKA A., PŁUSKA M., BUGAJSKI M.: Properties and Origin of Oval Defects in Epitaxial Structures Grown by MBE. Optica Appl. 2005 vol. 35 No. 3 p. 537-548.
• [P32] SZERLING A., KOSIEL K., WÓJCIK-JEDLIŃSKA A., PŁUSKA M., BUGAJSKI M.: Investigation of Oval Defects in (In)Ga(Al)As/GaAs Heterostructures by Spatially-Resolved Photoluminescence and Micro-Cathodoluminescence. Mater. Sci. in Semicond. Process. 2006 vol. 9 No. 1-3 p. 25-30
• [P33] WASIAK M., BUGAJSKI M., NAKWASKI W.: Envelope Function Description of Quantum Cascade Laser Electronic States. Optica Appl. 2005 vol. 35 No. 3 p. 651-654.
• [P34] WAWER D., OCHALSKI T. J., PIWOŃSKI T., WÓJCIK-JEDLIŃSKA A., BUGAJSKI M., PAGE H.: Spatially Resolved Thermoreflectance Study of Facet Temperature in Quantum Cascade Lasers. phys. stat. sol. (a) 2005 No. 202 p. 1227.
• [P35] WAWER D., TOMM J. W., PIERŚCIŃSKI K., BUGAJSKI M.: Analysis of High-Power Diode Laser Thermal Properties by Micro-Raman Spectroscopy. Optica Appl. 2005 vol. 35 No. 3 p. 555-560.
• [P36] WOLKENBERG A., PRZESŁAWSKI T.: Comparative Study of Sensor and Material Properties on In0.53Ga0.47As/InP Fabricated by MBE and MOCVD. Electron Technol. - Internet J. 2005/2006 vol. 37/38 p. 1-9. www.ite.waw.pl/etij.
• [P37] WOLKENBERG A., PRZESŁAWSKI T.: Magnetic Field Sensors Built from Slightly Crystallographicaly Mismatched Thin Films of In0.53Ga0.47As/InP(SI) Obtained by MBE and MOCVD. Sensors a. Actuators A Physical (submitt. to publ.).
• [P38] WOLKENBERG A., PRZESŁAWSKI T.: Mean Free Path and Mott Transition in InAsIn0.57Ga0.47A and GaAs MBE Epitaxial Layers. Mater. Sci. & Eng. B (submitt. to publ.).
• [P39] WOLKENBERG A., PRZESŁAWSKI T.: The Comparison of Conductivity Mobility Spectrum Using Multi-Carrier Fitting in InAs, InGaAs and GaAs MBE Epi-Layers. Mater. Sci. & Eng. B (submitt. to publ.).
• [P40] WOLKENBERG A., PRZESŁAWSKI T., KANIEWSKI J., REGIŃSKI K.: Conductivity Analysis of n-GaAs Molecular Beam Epitaxy Layers Using Multi-Carrier Fitting. J. Appl. Phys. 2006 vol. 99 p. 093708-1-8.
• [P41] WRZESIŃSKA H., MAŁYSKA K., RYMUZA Z., RATAJCZYK Ł.: The Effect of Underlayer Material on Scratch Resistance of TiN/CrN Superlattices. Elektronika 2005 No. 2-3 p. 10 (in Polish).
• [P42] WRZESIŃSKA H., MAŁYSKA K., RYMUZA Z.: The Effect of Underlayer Material on Scratch Resistance of TiN/CrN Superlattices. VIII Sci. Conf. "Electron Technology" ELTE 2004, Stare Jabłonki, Poland, 19-22.04.2004. IMiO PW 2005, p. 245-248.
• [P43] WYROBEK J. T., WRZESIŃSKA H., STROM A., RYMUZA Z., NOWEK A.: Nanowear of Ultrathin TiN/NbN Superlattices Deposited on Silicon. Tribology Lett. 2005 No. 18 p. 165.
• [P44] YASTRUBCHAK O., DOMAGALA J. Z., WOSIŃSKI T., KUDŁA A., REGIŃSKI K.: Anisotropic Strain Relaxation in Lattice-Mismatched III-V Epitaxial Layers. phys. stat. sol. (c) 2005 vol. 2 No. 6 p. 1943-1947.
• [P45] ZABOROWSKI M., GRABIEC P., WRÓBLEWSKI W., ROMANOWSKA E., WRZESIŃSKA H.: Planar Pseud-Reference Electrode for pH Measurement. Proc. of the VIII Sci. Conf. "Electron Technology" ELTE 2004, Stare Jabłonki, Poland, 19-22.04.2004. IMiO PW 2005 (in Polish). Conferences
• [C1] BUGAJSKI M.: Physics and UHV Technology of Low Dimensional Structures. Joint Meet. of the German Vacuum Society (DVG) and the Polish Vacuum Society (PTP) "Vacuum Based Science and Technology" & 4th Annual Meet. of the German Vacuum Society DVG. Krakow, Poland, 26-29.10.2005 (inv. lecture).
• [C2] BUGAJSKI M.: Thermoreflectance Study of Facet Heating in High Power Semiconductor Lasers. 2nd ASPECT Workshop on Advanced Spectroscopy 2005. Kazimierz Dolny, Poland, 29.09-2.10.2005 (inv. lecture).
• [C3] BUGAJSKI M., PIWOŃSKI T., WAWER D., OCHALSKI T.: Thermoreflectance Study of Facet Heating in Semiconductor Lasers. 11th Int. Conf. on Defects: Recognition, Imaging and Physics in Semiconductors (DRIP XI). Beijing, China, 15-19.09.2005 (inv. lecture).
• [C4] HEJDUK K., PIERŚCIŃSKI K., RZODKIEWICZ W., MUSZALSKI J., KANIEWSKI J.: Dielectric Coatings for Infrared Detectors. X Sem. "Surface and Thin Film Structures - 2005". Szklarska Poręba, Poland, 17-21.05.2005 (poster).
• [C5] KOSMALA M., REGIŃSKI K., KOSIEL K.: Some Problems of MBE Growth of Epitaxial Structures of Semiconductor Lasers for the Band 980 nm. X Sem. "Surface and Thin Film Structures - 2005". Szklarska Poręba, Poland, 17-21.05.2005 (poster).
• [C6] KOWALCZYK E., ORNOCH L., SZERLING A., MROZIEWICZ B.: Thermally Induced Changes of Broad Contact Pulse Operated SQW SCH Laser Spectra. X Sem. "Surface and Thin Film Structures - 2005". Szklarska Poręba, Poland, 17-21.05.2005 (commun.).
• [C7] MROZIEWICZ B.: Optical Interconnects - a Challenge to Semiconductor Lasers. 12th Int. Conf. MIXDES'2005, Krakow, Poland, 22-25.06.2005 (inv. lecture).
• [C8] MROZIEWICZ B., PIWONSKI T., KOWALCZYK E., SZERLING A., LEWANDOWSKI S. J.: External Cavity Diode Lasers with Ridge-Waveguide Type Broad Contact Semiconductor Optical Amplifiers. SPIE Congress on Optics and Opto-Electronics. Warsaw, Poland, 28.08-2.09.2005 (poster).
• [C9] OCHALSKI T. J.: Analysis of the Temperature Diffusion Length in High Power InGaAs/GaAs Lasers. 2005 MRS Fall Meet. Boston, USA, 28.11-3.12.2005 (poster).
• [C10] OCHALSKI T. J., SZYMAŃSKI M., WAWER D., PIERŚCIŃSKI K., BUGAJSKI M., KOZŁOWSKA A., MALĄG A. : Theoretical Calculation and Thermoreflectance Measurement of the Temperature Distribution in Broad Contact Diode Lasers. 2005 MRS Spring Meet. San Francisco, USA, 28.03-3.04.2005 (poster).
• [C11] OCHALSKI T. J., WAWER D., BUGAJSKI M., KOZŁOWSKA A., MALĄG A.: Thermoreflectance and Micro-Raman Measurements of the Temperature Distributions in Broad Contact Laser Diodes. X Sem. "Surface and Thin Film Structures - 2005”. Szklarska Poręba, Poland, 17-21.05.2005.
• [C12] ORNOCH L., KOWALCZYK E., MROZIEWICZ B.: Analysis of Thermal Conditions of Pulse Operated SQW SCH Lasers. X Sem. "Surface and Thin Film Structures - 2005". Szklarska Poręba, Poland, 17-21.05.2005.
• [C13] PIWOŃSKI T., WAWER D., BUGAJSKI M.: Thermoreflectance Study of Temperature Distribution on the Unable Resonator Semiconductor Laser Mirrors. X Sem. "Surface and Thin Film Structures - 2005". Szklarska Poręba, Poland, 17-21.05.2005 (commun).
• [C14] PRZESŁAWSKI T., WOLKENBERG A., KANIEWSKI J., REGIŃSKI K., JASIK A.: Magnetic Field Sensors on Undoped In0.53Ga0.47As/InP(SI) Heterostructures Fabricated by MBE and MOCVD. X Sem. "Surface and Thin Film Structures - 2005". Szklarska Poręba, Poland, 17-21.05.2005.
• [C15] RYMUZA Z., WRZESIŃSKA H.: Considerations on Nanomechanical and Tribological Behaviours of Ultrathin Superlattice Films Deposited on Silicon. Int. Conf. "Polymeric Composites and Tribology" Polycomtrib 2005. Gomel, Belarus, 18–21.07.2005 (inv. lecture).
• [C16] SZERLING A., KOSIEL K., WÓJCIK-JEDLIŃSKA A., PŁUSKA M., BUGAJSKI M.: Investigation of Oval Defects in (In)Ga(Al)As/GaAs Heterostructures by Spatially-Resolved Photoluminescence and Micro-Cathodoluminescence. 11th Int. Conf. on Defects: Recognition, Imaging and Physics in Semiconductors (DRIP XI). Beijing, China, 15-19.09.2005 (commun.)
• [C17] SZERLING A., KOSIEL K., WÓJCIK-JEDLIŃSKA A., PŁUSKA M., BUGAJSKI M.: Properties and Origin of Oval Defects in Epitaxial Structurtes Grown by MBE. X Sem. "Surface and Thin Film Structures - 2005". Szklarska Poręba, Poland, 17-21.05.2005 (commun.).
• [C18] SZERLING A., KOSIEL K., WÓJCIK-JEDLIŃSKA A., PŁUSKA M., RATAJCZAK J.: Creation and Evaluation of Oval Defects in Crystals Grown by MBE. X Sem. "Surface and Thin Film Structures – 2005". Szklarska Poręba, Poland, 17–21.05.2005 (commun.).
• [C19] WAWER D., TOMM J. W., PIERŚCIŃSKI K., BUGAJSKI M.: Analysis of High-Power Diode Laser Thermal Properties by Micro-Raman Spectroscopy. X Sem. "Surface and Thin Film Structures – 2005". Szklarska Poręba, Poland, 17–21.05.2005.
• [C20] WAWER D., PIERŚCIŃSKI K., OCHALSKI T. J., WÓJCIK-JEDLIŃSKA A., SZYMAŃSKI M., BUGAJSKI M.: Phase Resolved Thermoreflectance Investigation of Broad Area GaAsP/AlGaAs Lasers. 2nd Int. Conf. on Advanced Optoelectronics and Lasers, Jalta, Ukraine, 12–17.09.2005 (lecture).
• [PA1] MROZIEWICZ B.: Heat Sink. Pat. PL 190264 (in Polish).
• [PA2] MROZIEWICZ B.: Laser Diode with Additional Sealing of Side Walls. Pat. Appl. No. P378152 (in Polish.
• [PA3] PRZESŁAWSKI T., WOLKENBERG A.: Thin-Film Heterostructure Sensor of Magnetic Field. Pat. Appl. no P.373852 (in Polish).