Analysis of thermal conditions of pulse operated single quantum well separate confinement heterostructure (SQW SCH) lasers

• Autorzy: Ornoch, L. , Kowalczyk, E. , Mroziewicz, B.
• Konferencja: Surface Physics and Thin-Films Structure Seminar ; 17-21.05.2005 ; Szklarska Poręba, Poland
• Języki publikacji: EN

Abstrakty

EN

Junction temperature affects laser diode performance in many ways. Magnitude of the light output power, a center wavelength of the spectrum and diode reliability are all strongly dependent on the junction temperature. A simple electrical method to measure laser diode junction temperature has been developed. It is based on the measurement of the junction voltage change, which is due to the change of its temperature and is induced by supplying the laser with DC current in parallel to the pulsed driving current. Junction temperature dynamics in the pulse operated GaAs based SQW SCH quantum well broad contact lasers designed for emission at 980 nm was studied and results are presented. Additionally, junction cooling in these lasers as a function of time was also assessed.

Słowa kluczowe

EN

junction temperature dynamics; laser

• Czasopismo: Optica Applicata
• Rocznik: 2005
• Tom: Vol. 35, nr 3
• Strony: 591-595
• Opis fizyczny: Bibliogr. 4 poz., wykr.

Twórcy

autor

Ornoch, L.

• Institute of Electron Technology, al. Lotników 32/46, 02-668 Warszawa, Poland

autor

Kowalczyk, E.

• Institute of Electron Technology, al. Lotników 32/46, 02-668 Warszawa, Poland

autor

Mroziewicz, B.

• Institute of Electron Technology, al. Lotników 32/46, 02-668 Warszawa, Poland

Bibliografia

• [1] Laff R.A., Comerford L.D., Crow J.D., Brady M.J., Thermal performance and limitations of silicon-substrate packaged GaAs laser arrays, Applied Optics 17(5), 1978, pp. 778-84.
• [2] Dyment J.C., Cheng Y.C., SpringThorpe A.J., Temperature dependence of spontaneous peak wavelength in GaAs and Ga]_^l^s electroluminescent layers, Journal of Applied Physics 46(4), 1975, pp. 1739-43.
• [3] Mansanares A.m., Roger J.P., Fournier D., Baccara A.C., Temperature field determination of InGaAsP/InP lasers by photothermal microscopy: evidence for weak nonradiative processes at the facets, Applied Physics Letters 64(1), 1994, pp. 4-6.
• [4] Tang W.C., Rosen H. J., Vettiger P., Webb D.J., Comparison of the facet heating behavior between AlGaAs single quantum-well lasers and double-heterojunction lasers, Applied Physics Letters 60(9), 1992, pp. 1043-5.