Sb-contained thin films: structural and electric properties

• Autorzy: Bilozertseva, V. I. , Khlyap, H. M. , Shkumbatyuk, P. S. , Dyakonenko, N. L. , Krivonos, S. S.
• Konferencja: 8th International Conference on Intermolecular and Magnetic Interaction in Matter, Nałeczów 8-10 September 2005
• Języki publikacji: EN

Abstrakty

EN

First results of experimental study of the structure of Sb 2Se3 and NaSbSe2 thin films by means of transmission electron microscopy and electron diffraction methods are reported. Structural and morphological peculiarities of crystal growth in films are discussed. Some electrical properties, in particular, current-voltage characteristics in metal-semiconductor (MS) structures: In/Sb2Se 3 and In/NaSbSe2, are presented.

Słowa kluczowe

PL

półprzewodnik; cienkie warstwy; struktura; charakterystyka prądowo-napięciowa; związki antymonu; wzrost kryształów

EN

chalcogenide semiconductor; thin films; structure; current-voltage characteristics

• Czasopismo: Materials Science Poland
• Rocznik: 2006
• Tom: Vol. 24, No. 4
• Strony: 929--934
• Opis fizyczny: Bibliogr. 8 poz.

Twórcy

autor

Bilozertseva, V. I.

autor

Khlyap, H. M.

autor

Shkumbatyuk, P. S.

autor

Dyakonenko, N. L.

autor

Krivonos, S. S.

• National Technical University Kharkiv Polytechnical Institute, 21 Frunze str., Kharkiv 61002, Ukraine,

Bibliografia

• [1] BILOZERTSEVA V.I., BASAKUTSA V.A., PANCHENKO L.N., Cryst. Res. Technol., 34 (1999), 677.
• [2] BILOZERTSEVA V.I., BASAKUTSA V.A., GAPOCHENKO S.D., LEMESHEVSKAYA YE.T., MUSSIL V.V., Proceedings SPIE 5024 (2003), 84.
• [3] BASAKUTSA V.A., ZOZULYA L.P., LUZHNAYA N.P., GNIDASH N.I., Inorg. Mater. (Russia), 12 (1976), 1533.
• [4] BASAKUTSA V.A., LASAREV V.B., GNIDASH N.I., PODJCHAJA E.N, TRIPELL A.F., Inorg. Mater. (Russia) 23 (1988), 1255.
• [5] LASAREV V.B., BERUL S.L., SALOV A.V., Ternary Semiconductor Compound in systems AI-BV-CVI, Nauka, Moscow, 1982.
• [6] KHLYAP H., BILOZERTSEVA V., OVCHARENKO S., DYAKONENKO N., Thin Solid Films, 453–454 (2004), 154.
• [7] SZE S. M., Physics of Semiconductor Devices, Wiley, New York, 1981.
• [8] VISHNYAKOV N. V., VIKHROV S.P., MISHUSTIN V.G., APACHEV A.P., UTOCHKIN I.G., POPOV A.A., Semiconductors (Russia), 39 (2005), 1189.