Influence of dielectric coverage on photovoltaic conversion of silicon solar cells obtained by epitaxial lateral overgrowth

• Autorzy: Cieslak, K. , Gulkowski, S. , Olchowik, J. M.
• Języki publikacji: EN

Abstrakty

EN

This work presents an analysis of the influence of SiO2 dielectric coverage of a Si substrate on the solar-cell efficiency of Si thin layers obtained by epitaxial lateral overgrowth (ELO). The layers were obtained by liquid phase epitaxy (LPE). All experiments were carried out under the following conditions: initial temperature of growth: 1193 K; temperature difference ^T = 60 K; ambient gas: Ar; metallic solvent: Sn+Al; cooling rates: 0.5 K/min and 1 K/min. To compare the influence of the interior reflectivity of photons, we used two types of dielectric masks in a shape of a grid etched in SiO2 along the <110> and <112> directions on a p+ boron-doped (111) silicon substrate, where silicon dioxide covered 70 % and 80 % of the silicon surface, respectively. The results obtained in this work depict the correlation between the interior efficiency and percentage of SiO2 coverage of the substrate of the ELO solar cells.

Słowa kluczowe

EN

liquid phase epitaxy; thin film solar cells; epitaxial lateral overgrowth

• Czasopismo: Materials Science Poland
• Rocznik: 2012
• Tom: Vol. 30, No. 3
• Strony: 274--277
• Opis fizyczny: Bibliogr. 7 poz.

Twórcy

autor

Cieslak, K.

autor

Gulkowski, S.

autor

Olchowik, J. M.

• Institute of Environmental Protection Engineering, Lublin University of Technology, Nadbystrzycka 38, 20-618 Lublin, Poland

Bibliografia

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• [3] OLCHOWIK J.M., GULKOWSKI S., CIESLAK K.,ZABIELSKI K., JOZWIK I., RUDAWSKA A., Journal ofNon-Crystalline Solids 354 (2008) 4423.
• [4] CAMPBELL P.R., PhD thesis, University of New SouthWales, June, 1989.
• [5] NISHINAGA T., Journal of Crystal Growth 237-239(2002), 1410.
• [6] LUQUE A., HEGEDUS S., Handbook of PhotovoltaicScience and Engineering; Wiley 2003.
• [7] JOZWIK I., OLCHOWIK J.M., Journal of Crystal Growth294 (2006), 367.