Electrically active defects in SiC Schottky barrier diodes

• Autorzy: Gelczuk, Ł. , Dąbrowska-Szata, M. , Synowiec, Z.
• Języki publikacji: EN

Abstrakty

EN

The electrical properties of deep-level defects in real packaged SiC Schottky barrier rectifiers were studied by deep level transient spectroscopy (DLTS). One deep-level trap with an activation energy in the 0.29-0.30 eV range was revealed to be present in all the tested samples. The electrical characteristics of the trap indicate it is probably attributed to dislocations or to metastable defects, which can be responsible for discrepancies observed in I-V characteristics (see Ref. [2]).

Słowa kluczowe

EN

SiC; Schottky diode; deep-level defect; DLTS

• Czasopismo: Materials Science Poland
• Rocznik: 2011
• Tom: Vol. 29, No. 1
• Strony: 70--75
• Opis fizyczny: Bibliogr. 15 poz.,

Twórcy

autor

Gelczuk, Ł.

autor

Dąbrowska-Szata, M.

autor

Synowiec, Z.

• Wrocław University of Technology Faculty of Microsystem Electronics and Photonics Janiszewskiego 11/17 50-372 Wrocław Poland

Bibliografia

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