Determination of optical constants and thickness of amorphous GaP thin film

• Autorzy: Pimpabute, N. , Burinprakhon, T. , Somkhunthot, W.
• Języki publikacji: EN

Abstrakty

EN

Gallium phosphide (GaP) thin film was prepared by an asymmetric bipolar pulsed-dc magnetron sputtering technique onto glass substrate at room temperature in an Ar atmosphere. A compacted GaP powder was used as a target. The X-ray diffraction patterns show that the film is amorphous. The transmittance of the film was measured in the incident photon wavelength range of 300–2000 nm. The film’s refractive index, thickness and absorption coefficient as a function of wavelength were determined by using Swanepoel’s method. The deduced absorption data indicate that the optical transition in the film is dominated by the indirect type. The corresponding energy of 1.51 eV was obtained for the 563š16 nm thin film.

Słowa kluczowe

EN

pulsed dc sputtering; gallium phosphide film; optical constants; optical band gap

• Czasopismo: Optica Applicata
• Rocznik: 2011
• Tom: Vol. 41, nr 1
• Strony: 257--268
• Opis fizyczny: Bibliogr. 19 poz.

Twórcy

autor

Pimpabute, N.

autor

Burinprakhon, T.

autor

Somkhunthot, W.

• Department of Physics, Faculty of Science, Khon-Kaen University, Khon-Kaen, 40002, Thailand

Bibliografia

• [1] HATAMI F., MASSELINK W.T., LORDI V., HARRIS J.S., Green emission from InP–GaP quantum-dot light-emitting diode, IEEE Photonics Technology Letters 18 (7), 2006, pp. 895–897.
• [2] EPSTEIN A.S., GROVE W.O., Single crystal gallium phosphide solar cells, Advance Energy Conversion 5 (2), 1965, pp. 161–172.
• [3] KUBOTA H., MATSUMOTO T., HARAYU T., FUJIYOSHI T., MIYAGAV R., MIYAHARA K., Amorphous gallium phosphide (a-GaP) pn-diode by ion beam assisted deposition, International PhotovoltaicScience and Engineering Conference 35 (7), 1994, pp. 353–358.
• [4] KUMABE K., MATSUMOTO N., Properties of GaAs and GaP amorphous-film/crystal junctions,Japanese Journal of Applied Physics 18 (9), 1979, pp. 1789–1794.
• [5] KNIGHTS J.C., LUJAN R.A., Plasma deposition of GaP and GaN, Journal of Applied Physics 49 (3),1978, pp. 1291–1293.
• [6] XU JIANHONG, CHEN KUNJI, ZHU ENJUN, Investigation of optical properties of amorphous GaP films,Chinese Physics Letters 8 (4), 1991, pp. 187–190.
• [7] MATSUMOTO N., KUMABE K., Effects of hydrogen incorporation during deposition by sputtering for amorphous gallium phosphide films, Japanese Journal of Applied Physics 18 (5), 1979,pp. 1011–1012.
• [8] REINIG R., ALEX V., FENSKE F., FUHS W., SELLE B., Pulsed dc magnetron-sputtering of microcrystalline silicon, Thin Solid Films 403–404, 2002, pp. 86–90.
• [9] KELLY P.J., ARNELL R.D., Magnetron sputtering: A review of recent developments and applications,Vacuum 56 (3), 2000, pp. 159–172.
• [10] DURMUS H., SAFAK H., KARABIYIK H., Determination of optical constant of materials by two different methods: An application to single crystals Si, Turkish Journal of Physics 24 (6), 2000, pp. 725 –735.
• [11] SWANEPOEL R., Determination of the thickness and optical constants of amorphous silicon, Journal of Physics E: Scientific Instruments 16 (12), 1983, pp. 1214–1222.
• [12] THAKUR A., SHARMA V., SAINI G.S.S., GOYAL N., TRIPATHI S.K., Calculation of optical parameters of a-Ge-Se-Sn thin films, Journal of Optoelectronics and Advanced Materials 7 (4), 2005,pp. 2077–2083.
• [13] NICA V., CHIRA S., MADARE D., Determination of the optical constants and thickness of titanium oxide thin films by Swanepoel method, Fizica Staii Condensate LI–LII, 2005–2006, pp. 184–191.
• [14] BAKRY A.M., Influence of film thickness on the optical properties of hydrogenated amorphous silicon thin films, Egyptian Journal of Solids 31(1), 2008, pp. 11–22.
• [15] POELMAN D., SMET P.F., Methods for the determination of the optical constants of thin films from single transmission measurements: A critical review, Journal of Physics D: Applied Physics 36 (15), 2003, pp. 1850–1857.
• [16] ILKER A., HUSEYIN T., Optical transmission measurements on glow-discharge amorphous silicon nitride films, Turkish Journal of Physics 25 (3), 2001, pp. 215–222.
• [17] SOMKHUNTHOT W., BURINPRAKHON T., THOMAS I., SEETAWAN T., AMORNKITBAMRUNG V., Bipolar pulsed-DC power supply for magnetron sputtering and thin films synthesis, Elektrika 9 (2),2007, pp. 20–26.
• [18] YUE G.H., PENG D.L., YAN P.X., WANG L.S., WANG W., LUO X.H., Structure and optical properties SnS thin film prepared by pulse electrodeposition, Journal of Alloys and Compounds 468 (1–2),2009, pp. 254–257.
• [19] ILICAN S., ZOR M., CAGLAR Y., CAGLAR M., Optical characterization of the CdZn( S1-xSex)2 thin films deposited by spray pyrolysis method, Optica Applicata 36 (1), 2006, pp. 29–37.