Warianty tytułu
Języki publikacji
Abstrakty
In this paper, we present the results of photoreflectance (PR) investigation of an Al0.45Ga0.55As/GaAs superlattice (SL). The modulation spectra have revealed a number of features at both room and low temperature (10 K) which could be associated with the optical transitions between the minibands of the superlattice. Based on calculations within the effective mass approximation they have been identified as transitions between the miniband edges, i.e., the so-called ? and ? points, respectively, including the high index transitions and those related to the light holes. Tuning the structure parameters around the nominal ones treated as semi-free in the theoretical considerations allowed the growth accuracy of such a complex system to be verified.
Słowa kluczowe
Czasopismo
Rocznik
Tom
Strony
897-902
Opis fizyczny
bibliogr. 22 poz.,
Twórcy
autor
autor
autor
autor
autor
autor
autor
- Institute of Physics, Wrocław University of Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland
Bibliografia
- [1] NAKAYAMA N., FUJITA T., NISHIMURA H., Photoreflectance study of folded above-barrier states in (InAs)1/(GaAs)m strained-layer superlattices, Superlattices and Microstructures 17(1), 1995, pp. 31.34.
- [2] CAO S.M., WILLANDER M., TOROPOV A.A., SHUBINA T.V., MEL�fTSER B.Y., SHAPOSHNIKOV S.V., KOP�fEV P.S., BERGMAN J.P., HOLTZ P.O., MONEMAR B., Characterization of Al0.4Ga0.6 As/GaAs aperiodic superlattices by photoluminescence spectroscopy at 2 K, Superlattices and Microstructures 20(2), 1996, pp. 229.235.
- [3] TAMURA K., HIRAKAWA K., SHIMADA Y., Drude absorption and electron localization in GaAs/AlGaAs superlattices, Physica B: Condensed Matter 272(1.4), 1999, pp. 183.186.
- [4] MITYAGIN Y.A., MURZIN V.N., TELENKOV M.P., Resonant tunneling in weakly coupled GaAs/AlGaAs superlattices in a transverse magnetic field: A probe of electronic distribution function, Physica E: Low-dimensional Systems and Nanostructures 32(1.2), 2006, pp. 297.300.
- [5] SMRCKA L., GONCHARUK N.A., SVOBODA P., VASEK P., KRUPKO Y., WEGSCHEIDER W., Electron magnetotransport in GaAs/AlGaAs superlattices with weak and strong inter-well coupling, Microelectronics Journal 39(3.4), 2008, pp. 411.413.
- [6] FAIST J., CAPASSO F., SIVCO D.L., SIRTORI C., HUTCHINSON A.L., CHO A.Y., Quantum cascade laser, Science 264(5158), 1994, pp. 553.556.
- [7] SIRTORI C., KRUCK P., BARBIERI S., COLLOT P., NAGLE J., BECK M., FAIST J., OESTERLE U., GaAs/AlxGa1.x as quantum cascade lasers, Applied Physics Letters 73(24), 1998, pp. 3486.3488.
- [8] PAGE H., BECKER C., ROBERTSON A., GLASTRE G., ORTIZ V., SIRTORI C., 300 K operation of a GaAs--based quantum-cascade laser at �É = 9 �Ę m, Applied Physics Letters 78(22), 2001, pp. 3529.3531. 902 M. MOTYKA et al.
- [9] KOSIEL K., KUBACKA-TRACZYK J., KARBOWNIK P., SZERLING A., MUSZALSKI J., BUGAJSKI M., ROMANOWSKI P., GACA J., WOJCIK M., Molecular-beam epitaxy growth and characterization of mid-infrared quantum cascade laser structures, Microelectronics Journal 40(3), 2009, pp. 565.569.
- [10] KOSIEL K., MUSZALSKI J., SZERLING A., BUGAJSKI M., JAKIE.A R., Improvement of quantum efficiency of MBE grown AlGaAs/InGaAs/GaAs edge emitting lasers by optimisation of construction and technology, Vacuum 82(4), 2008, pp. 383.388.
- [11] POLLAK F.H., Handbook on Semiconductors, [Ed.] T.S. Moss, Vol. 2, Elsevier Science, Amsterdam 1994, pp. 527.635.
- [12] GLEMBOCKI O.J., SHANABROOK B.V., Photoreflectance Spectroscopy of Microstructures, [Eds.] D.G. Seiler, C.L. Littler, Semiconductors and Semimetals, Vol. 36, Academic Press, New York 1992, p. 221.
- [13] MISIEWICZ J., KUDRAWIEC R., RYCZKO K., S.K G., FORCHEL A., HARMAND J.C., HAMMAR M., Photoreflectance investigations of the energy level structure in GaInNAs-based quantum wells, Journal of Physics: Condensed Matter 16(31), 2004, pp. S3071.S3094.
- [14] KUDRAWIEC R., S.K G., SITAREK P., RYCZKO K., MISIEWICZ J., WANG T., FORCHEL A., Three beam photoreflectance as a powerful method to investigate semiconductor heterostructures, Thin Solid Films 450(1), 2004, pp. 71.74.
- [15] MISIEWICZ J., SITAREK P., S.K G., KUDRAWIEC R., Semiconductor heterostructures and device structures investigated by photoreflectance spectroscopy, Materials Science-Poland 21(3), 2003, pp. 263.320.
- [16] MOTYKA M., KUDRAWIEC R., S.K G., MISIEWICZ J., KRESTNIKOV I.L., MIKHRIN S., KOVSH A., Room temperature contactless electroreflectance characterization of InGaAs/InAs/GaAs quantum dot wafers, Semiconductor Science and Technology 21(10), 2006, pp. 1402.1407.
- [17] MOTYKA M., KUDRAWIEC R., MISIEWICZ J., HUMMER M., ROsNER K., LEHNHARDT T., MULLER M., FORCHEL A., Photoreflectance and photoluminescence study of Ga0.76In0.24Sb/GaSb single quantum wells: Band structure and thermal quenching of photoluminescence, Journal of Applied Physics 103(11), 2008, p. 113514.
- [18] KUDRAWIEC R., MOTYKA M., MISIEWICZ J., HUMMER M., ROsNER K., LEHNHARDT T., MULLER M., FORCHEL A., Room temperature contactless electroreflectance of the ground and excited state transitions in Ga0.76In0.24 As0.08Sb0.92/GaSb single quantum wells of various widths, Applied Physics Letters 92(4), 2008, p. 041910.
- [19] KUDRAWIEC R., PASZKIEWICZ B., MOTYKA M., MISIEWICZ J., DERLUYN J., LORENZ A., CHENG K., DAS J., GERMAIN M., Contactless electroreflectance evidence for reduction in the surface potential barrier in AlGaN/GaN heterostructures passivated by SiN layer, Journal of Applied Physics 104(9), 2008, p. 096108.
- [20] KUDRAWIEC R., YUEN H.B., BANK S.R., BAE H.P., WISTEY M.A., HARRIS J.S., MOTYKA M., MISIEWICZ J., On the Fermi level pinning in as-grown GaInNAs(Sb)/GaAs quantum wells with indium content of 8%.32%, Journal of Applied Physics 104(3), 2008, p. 033526.
- [21] GELCZUK .., MOTYKA M., MISIEWICZ J., D.BROWSKA-SZATA M., Deep traps and optical properties of partially strain-relaxed InGaAs/GaAs heterostructures, Materials Science and Engineering B 147(2.3), 2008, pp. 166.170.
- [22] VURGAFTMAN I., MEYER J.R., Band parameters for nitrogen-containing semiconductors, Journal of Applied Physics 94(6), 2003, pp. 3675.3696.
Typ dokumentu
Bibliografia
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Identyfikator YADDA
bwmeta1.element.baztech-article-BPW7-0012-0113