Czasopismo
2009
|
Vol. 39, nr 4
|
865-874
Tytuł artykułu
Autorzy
Wybrane pełne teksty z tego czasopisma
Warianty tytułu
Języki publikacji
Abstrakty
In the present paper, we discuss the influence of point defects on electrical and optical characteristics of ZnO thin films grown by the atomic layer deposition (ALD) method. The films were grown on glass substrates at low temperature (100-200 °C). We used diethylzinc (DEZn) and deionized water as precursors. Room temperature photoluminescence (RT PL) spectra, secondary ion mass spectroscopy (SIMS), electron dispersive X-ray (EDX) analysis and Hall effect measurements were made for as-grown ZnO layers and for the annealed ones (in air at 300 and 400 °C as well as in N2 atmosphere at 400 °C). The air-annealed ZnO films reveal a substantial reduction of a carrier concentration (up to 4 orders of magnitude - from 1019 to 1015 cm-3) combined with changes in intensity of the defect-related luminescence bands. PL related to deep defects is shifted towards the lower energy range (red light emission) after annealing (in air and nitrogen-rich conditions).
Czasopismo
Rocznik
Tom
Strony
865-874
Opis fizyczny
bibliogr. 34 poz.,
Twórcy
autor
autor
autor
autor
autor
autor
autor
autor
autor
- Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland
Bibliografia
- [1] OZGUR U., ALIVOV YA.I., LIU C., TEKE A., RESHCHIKOV M.A., DOGAN S., AVRUTIN V., CHO S.-J., MORKOC H., A comprehensive review of ZnO materials and devices, Journal of Applied Physics 98(4), 2005, p. 041301.
- [2] KLINGSHIRN C., ZnO: from basics towards applications, Physica Status Solidi (b) 244(9), 2007, pp. 3027.3073.
- [3] KARPINA V.A., LAZORENKO V.I., LASHKAREV C.V., DOBROWOLSKI V.D., KOPYLOVA L.I., BATURIN V.A., PUSTOVOYTOV S.A., KARPENKO A.JU., EREMIN S.A., LYTVYN P.M., OVSYANNIKOV V.P., MAZURENKO E.A., Zinc oxide . analogue of GaN with new perspective possibilities, Crystal Research and Technology 39(11), 2004, pp. 980.992.
- [4] NORTON D.P., HEO Y.W., IVILL M.P., IP K., PEARTON S.J., CHISHOLM M.F., STEINER T., ZnO: growth, doping and processing, Materials Today 7(6), 2004, pp. 34.40.
- [5] PEARTON S.J., NORTON D.P., IP K., HEO Y.W., STEINER T., Recent progress in processing and properties of ZnO, Superlattices and Microstructures 34(1.2), 2003, pp. 3.32.
- [6] ALVIN SHI G., SABOKTAKIN M., STAVOLA M., PEARTON S.J., gHidden hydrogen in as-grown ZnO, Applied Physics Letters 85(23), 2004, pp. 5601.5603.
- [7] MONAKHOV E.V., CHRISTENSEN J.S., MAKNYS K., SVENSSON B.G., KUZNETSOV A.YU., Hydrogen implantation into ZnO for n+-layer formation, Applied Physics Letters 87(19), 2005, p. 191910.
- [8] SEUNG YEOP MYONG, SANG IL PARK, KOENG SU LIM, Improvement of electrical stability of polycrystalline ZnO thin films via intentional post-deposition hydrogen doping, Thin Solid Films 513(1.2), 2006, pp. 148.151.
- [9] VAN DE WALLE C.G., Hydrogen as a cause of doping in zinc oxide, Physical Review Letters 85(5), 2000, pp. 1012.1015.
- [10] IP K., HEO Y.W., BAIK K.H., NORTON D.P., PEARTON S.J., REN F., Carrier concentration dependence of Ti/Al/Pt/Au contact resistance on n-type ZnO, Applied Physics Letters 84(4), 2004, pp. 544.546.
- [11] KRAJEWSKI T., GUZIEWICZ E., GODLEWSKI M., WACHNICKI .., KOWALIK I.A., WOJCIK-G.ODOWSKA A.,UKASIEWICZ M., KOPALKO K., OSINNIY V., GUZIEWICZ M., The influence of growth temperature and precursors�f doses on electrical parameters of ZnO thin films grown by atomic layer deposition technique, Microelectronics Journal 40(2), 2009, pp. 293.295.
- [12] GODLEWSKI M., GUZIEWICZ E., SZADE J., WOJCIK-G.ODOWSKA A., WACHNICKI .., KRAJEWSKI T., KOPALKO K., JAKIE.A R., YATSUNENKO S., PRZE.DZIECKA E., KRUSZEWSKI P., HUBY N., TALLARIDA G., FERRARI S., Vertically stacked non-volatile memory devices . material considerations, Microelectronic Engineering 85(12), 2008, pp. 2434.2438.
- [13] .UKA G., KRAJEWSKI T., WACHNICKI .., SZCZEPANIK A., FIDELUS J.D., SZCZERBAKOW A., .USAKOWSKA E., KOPALKO K., GUZIEWICZ E., GODLEWSKI M., Hybrid organic/ZnO p-n junctions with n-type ZnO grown by atomic layer deposition, Acta Physica Polonica A 114(5), 2008, pp. 1229.1234.
- [14] LUGLI P., Technical University of Munich . private communication.
- [15] TRIBOULET R., PERRIERE J., Epitaxial growth of ZnO films, Progress in Crystal Growth and Characterization of Materials 47(2.3), 2003, pp. 65.138.
- [16] SUNYEOL JEON, SEOKHWAN BANG, SEUNGJUN LEE, SEMYUNG KWON, WOOHO JEONG, HYEONGTAG JEON, HO JUNG CHANG, HYUNG-HO PARK, Structural and electrical properties of ZnO thin films deposited by atomic layer deposition at low temperatures, Journal of the Electrochemical Society 155(10), 2008, pp. H738.H743.
- [17] RORO K.T., KASSIER G.H., DANGBEGNON J.K., SIVARAYA S., WESTRAADT J.E., NEETHLING J.H., LEITCH A.W.R., BOTHA J.R., Temperature-dependent Hall effect studies of ZnO thin films grown by metalorganic chemical vapour deposition, Semiconductor Science and Technology 23(5), 2008, p. 055021.
- [18] SUNTOLA T., Handbook of Crystal Growth, Part 3b . Growth Mechanisms and Dynamics, D.T.J Hurle, Elsevier, Amsterdam, Lausanne, New York 1994, pp. 605.663.
- [19] VAN DER PAUW L.J., A method of measuring specific resistivity and Hall effect of discs of arbitrary shape, Philips Research Reports 13(1), 1958, pp. 1.9.
- [20] VAN DER PAUW L.J., A method of measuring the resistivity and Hall coefficient on lamellae of arbitrary shape, Philips Technical Review 20(8), 1958/59, pp. 220.224.
- [21] GUZIEWICZ E., KOWALIK I.A., GODLEWSKI M., KOPALKO K., OSINNIY V., WOJCIK A., YATSUNENKO S., .USAKOWSKA E., PASZKOWICZ W., GUZIEWICZ M., Extremely low temperature growth of ZnO by atomic layer depsition, Journal of Applied Physics 103(3), 2008, p. 033515.
- [22] YAMADA A., SANG B., KONAGAI M., Atomic layer deposition of ZnO transparent conducting oxides, Applied Surface Science 112, 1997, pp. 216.222.
- [23] TADATSUGU MINAMI, Present status of transparent conducting oxide thin-film development for indium-tin oxide (ITO) substitutes, Thin Solid Films 516(17), 2008, pp. 5822.5828.
- [24] TEKE A., OZGUR U., DOGAN S., GU X., MORKOC H., NEMETH B., NAUSE J., EVERITT H.O., Excitonic fine structure and recombination dynamics in single-crystalline ZnO, Physical Review B 70(19), 2004, p. 195207.
- [25] TAM K.H., CHEUNG C.K., LEUNG Y.H., DJURI.I. A.B., LING C.C., BELING C.D., FUNG S., KWOK W.M., CHAN W.K., PHILLIPS D.L., DING L., GE W.K., Defects in ZnO nanorods prepared by a hydrothermal method, Journal of Physical Chemistry B 110(42), 2006, pp. 20865.20871.
- [26] GOMI M., OOHIRA N., OZAKI K., KOYANO M., Photoluminescent and structural properties of precipitated ZnO fine particles, Japanese Journal of Applied Physics 42(2A), 2003, pp. 481.485.
- [27] HEO Y.W., NORTON D.P., PEARTON S.J., Origin of green luminescence in ZnO thin film grown by molecular-beam epitaxy, Journal of Applied Physics 98(7), 2005, p. 073502.
- [28] WU X.L., SIU G.G., FU C.L., ONG H.C., Photoluminescence and cathodoluminescence studies of stoichiometric and oxygen-deficient ZnO films, Applied Physics Letters 78(16), 2001, pp. 2285.2287.
- [29] VANHEUSDEN K., SEAGER C.H., WARREN W.L., TALLANT D.R., VOIGT J.A., Correlation between photoluminescence and oxygen vacancies in ZnO phosphors, Applied Physics Letters 68(3), 1996,
- [30] van DIJKEN A., MEULENKAMP E.A., VANMAEKELBERGH D., MEIJERINK A., The kinetics of the radiative and nonradiative processes in nanocrystalline ZnO particles upon photoexcitation, Journal of Physical Chemistry B 104(8), 2000, pp. 1715.1723.
- [31] HUBY N., FERRARI S., GUZIEWICZ E., GODLEWSKI M., OSINNIY V., Electrical behavior of zinc oxide layers grown by low temperature atomic layer deposition, Applied Physics Letters 92(2), 2008, p. 023502.
- [32] GUZIEWICZ E., GODLEWSKI M., KRAJEWSKI T., WACHNICKI .., SZCZEPANIK A., KOPALKO K., WOJCIK- G.ODOWSKA A., PRZE.DZIECKA E., PASZKOWICZ W., .USAKOWSKA E., KRUSZEWSKI P., HUBY N., TALLARIDA G., FERRARI S., ZnO grown by atomic layer deposition . a material for transparent electronics and organic heterojunctions, Journal of Applied Physics 105(12), 2009, p. 122413.
- [33] HUBY N., TALLARIDA G., KUTRZEBA M., FERRARI S., GUZIEWICZ E., WACHNICKI .., GODLEWSKI M., New selector based on zinc oxide grown by low temperature atomic layer deposition for vertically stacked non-volatile memory devices, Microelectronic Engineering 85(12), 2008, pp. 2442.2444.
- [34] KATSIA E., HUBY N., TALLARIDA G., KUTRZEBA-KOTOWSKA B., PEREGO M., FERRARI S., KREBS F.C., GUZIEWICZ E., GODLEWSKI M., OSINNIY V., .UKA G., Poly(3-hexylthiophene)/ZnO hybrid pn junctions for microelectronics applications, Applied Physics Letters 94(14), 2009, p. 143501.
Typ dokumentu
Bibliografia
Identyfikatory
Identyfikator YADDA
bwmeta1.element.baztech-article-BPW7-0012-0109