Warianty tytułu
Języki publikacji
Abstrakty
Chromium layers were vapor deposited under ultrahigh vacuum onto samples cut out of a single crystal of 6H-SiC(0001) that were Ar+ bombardment modified. The substrates and electrical contacts formed by the Cr adlayer were characterized in situ by current-sensing atomic force microscopy (CS-AFM) and X-ray photoelectron spectroscopy (XPS). Cr/SiC contacts reveal a good I-V characteristic linearity without the use of heavy impurity doping and high-temperature annealing.
Słowa kluczowe
Czasopismo
Rocznik
Tom
Strony
765-772
Opis fizyczny
bibliog.12 poz.,
Twórcy
autor
autor
autor
autor
autor
- Institute of Experimental Physics, University of Wrocław, plac Maxa Borna 9, 50-204 Wrocław, Poland
Bibliografia
- [1] WRIGHT N.G., HORSFALL A. B., VASSILEVSKI K., Prospects for SiC electronics and sensors, Materials Today 11(1–2), 2008, pp. 16–21.
- [2] MATSUNAMI H., Current SiC technology for power electronic devices beyond Si, Microelectronic Engineering 83(1), 2006, pp. 2–4.
- [3] PORTER L.M., DAVIS R.F., A critical review of ohmic and rectifying contacts for silicon carbide,Materials Science and Engineering B 34(2–3), 1995, pp. 83–105.
- [4] SYRKIN A.L., ANDREEV A.N., LEBEDEV A.A., RASTEGAEVA M.G., CHELNOKOV V.E., Surface barrier height in metal-n-6H-SiC structures, Materials Science and Engineering B 29(1–3), 1995,pp. 198–201.
- [5] DAVYDOV S.YU., A simple model for calculating the height of Schottky barriers at contacts of transition metals with silicon carbide polytypes, Physics of the Solid State 46(12), 2004,pp. 2207–2212.
- [6] ADDAMIANO A., Semiconductive Crystals of Silicon Carbide with Improved Chromium-Containing Electrical Contacts, US Patent No. 3 510 733, 1970.
- [7] STARKE U., BRAM CH., STEINER P.-R., HARTNER W., HAMMER L., HEINZ K., MÜLLER K., The (0001)-surface of 6H-SiC: morphology, composition and structure, Applied Surface Science 89(2), 1995, pp. 175–185.
- [8] GRODZICKI M., MAZUR P., ZUBER S., URBANIK G., CISZEWSKI A., Empty core screw dislocations formed on 6H-SiC(0001) during hydrogen etching , Thin Solid Films 516(21), 2008, pp. 7530–7537.
- [9] MAZUR P., ZUBER S., GRODZICKI M., CISZEWSKI A., Effects of Ar+ ion sputtering on morphology and electric conductance of 6H-SiC (0001) surface, Materials Science – Poland 26(2), 2008,pp. 265–269.
- [10] MAZUR P., ZUBER S., GRODZICKI M., CISZEWSKI A., Morphology and electric conductance of ultra-thin Cr contacts on 6H-SiC(0001): AFM and current-sensing AFM study, Vacuum 82(4), 2007,pp. 364–371.
- [11] PEZOLDT J., STOTTKO B., KUPRIS G., ECKE G., Sputtering effects in hexagonal silicon carbide, Materials Science and Engineering B 29(1–3), 1995, pp. 94–98.
- [12] SEYLLER TH., EMTSEV K.V., SPECK F., GAO K.-Y., LEY L., Schottky barrier between 6H-SiC and graphite: Implications for metal/SiC contact formation, Applied Physics Letters 88(24), 2006,p. 242103.
Typ dokumentu
Bibliografia
Identyfikatory
Identyfikator YADDA
bwmeta1.element.baztech-article-BPW7-0012-0096