A study of the gas specificity of porous silicon sensors for organic vapours

• Autorzy: Choi, S. H. , Cheng, H. , Park, S. H. , Kim, H. J. , Kim, Y. Y. , Lee, K. W.
• Języki publikacji: EN

Abstrakty

EN

A porous silicon sensor was investigated as a means to determine the response specificity for organic vapours. Porous silicon layers were fabricated by electrochemical anodization of p-type crystalline silicon in an HF ethanol solution under various conditions. The porous silicon sensors were placed in a gas chamber with various organic vapours, and the changes in electrical resistance under constant voltage of each sensor were used as detection signals. The sensors recorded various changes in resistivity for various organic vapours.

Słowa kluczowe

EN

porous silicon; response pattern; gas sensor; gas specificity

• Czasopismo: Materials Science Poland
• Rocznik: 2009
• Tom: Vol. 27, No. 2
• Strony: 603--610
• Opis fizyczny: Bibliogr. 18 poz.

Twórcy

autor

Choi, S. H.

autor

Cheng, H.

autor

Park, S. H.

autor

Kim, H. J.

autor

Kim, Y. Y.

autor

Lee, K. W.

• Department of Physics, Kongju National University, 314-701 Chungnam, Republic of Korea

Bibliografia

• [1] CANHAM L.T., Appl. Phys. Lett., 57 (1990), 1046.
• [2] CANHAM L.T., Properties of Porous Silicon, INSPEC, London, 1997.
• [3] VIAL J.C., DERRIEN J., Porous Silicon Science and Technology, Springer-Verlag, Berlin, 1995.
• [4] HIRSCHMAN K.D., TSYBESKOV L., DUTTAGUPTA S.P., FAUCHET P.M., Nature, 384 (1996), 338.
• [5] SZENTPÁLI B., NOHÁCSY T., BÁRSONY I., Curr. Appl. Phys., 6 (2006), 174.
• [6] RAVI KUMAR REDDY R., BASU I., BHATTACHARYA E., CHADHA A., Curr. Appl. Phys., 3 (2003), 155.
• [7] BARATTO C., FAGLIA G., SBERVEGLIERI G., GABURRO Z., PANCHERI L., OTON C., PAVESI L., Sensors, 2 (2002), 121.
• [8] OUYANG H., STRIEMER C.C., FAUCHET P.M., Appl. Phys. Lett., 88 (2006), 163108.
• [9] PANCHERI L., OTON C.J., GABURRO Z., SONCINI G., PAVESI L., Sens. Actuators B, 89 (2003), 237.
• [10] SALEM M.S., SAILOR M.J., HARRAZ F.A., SAKKA T., OGATA Y.H., J. Appl. Phys., 100 (2006), 083520.
• [11] SALGADO G.G., BECERRIL T.D., SANTIESTEBAN H.J., ANDRÉS E.R., Opt. Mater., 29 (2006), 51.
• [12] STEFANO L.D., ROTIROTI L., RENDINA I., MORETTI L., SCOGNAMIGLIO V., ROSSI M., D’AURIA S., Biosens. Bioelectron., 21 (2006), 1664.
• [13] PÉREZ E.X., MARSAL L.F., FERRÉ-BORRULL J., TRIFONOV T., PALLARÈS J., Physica E, 38 (2007), 172.
• [14] XU Y.Y., LI X.J., HE J.T., HU X., WANG H.Y., Sens. Actuators B, 105 (2005), 219.
• [15] MARTÍN-PALMA R.J., TORRES-COSTA V., ARROYO-HERNÁNDEZ M., MANSO M., PÉREZ-RIGUEIRO J., MARTÍNEZ-DUART J.M., Microelectron. J., 35 (2004), 45.
• [16] BARATTO C., COMINI E., FAGLIA G., SBERVEGLIERI G., FRANCIA G.D., FILIPPO F.D., FERRARA V.L., QUERCIA L., LANCELLOTTI L., Sens. Actuators. B, 65 (2000), 257.
• [17] HARPER J., SAILOR M.J., Langmuir, 13 (1997), 4652.
• [18] Standard Committee on Sensors, Standard of Electronic Industries Association of Korea EIAK GC-6220 (2000), p. 6.