Amorphous phase formation of Zr-Cu thin films fabricated by magnetron co-sputtering

• Autorzy: Li, L. X. , Zhang, D. T. , Li, M. , Wang, H. X.
• Języki publikacji: EN

Abstrakty

EN

ZrxCu1-x amorphous films were prepared on Si(111) substrates by magnetron co-sputtering of pure Zr and Cu targets. It was found that the amorphous forming ability of the films increased with x when x was smaller than 65. It was therefore different from their bulk counterparts, which only for x = 35 and 50 were reported to have high glass forming ability during casting. The structures of the films were sensitive to the substrate temperature and the sputtering pressure of argon. X-ray diffraction and atomic force microscopic analyses of the Zr65Cu35 amorphous films annealed at various temperatures confirmed that the crystallization temperature was approximately 573 K.

Słowa kluczowe

EN

Zr-Cu thin film; magnetron sputtering; amorphous film; crystallization

• Czasopismo: Materials Science Poland
• Rocznik: 2009
• Tom: Vol. 27, No. 2
• Strony: 539--545
• Opis fizyczny: Bibliogr. 22 poz.

Twórcy

autor

Li, L. X.

autor

Zhang, D. T.

autor

Li, M.

autor

Wang, H. X.

• College of Physics and Chemistry, Henan Polytechnic University, Jiaozuo, 454000 China

Bibliografia

• [1] CLEMENT W., WILLENS R.H., DUWEZ P., Nature, 187 (1960), 869.
• [2] WANG W.H., DONG C., SHEK C.H., Mater. Sci. Eng. R, 44 (2004), 45.
• [3] KRAMER J., Physics, 106 (1937), 675.
• [4] AMATO J.C., Appl. Phys. Lett., 85 (2004),103.
• [5] WANG Y.T., XI X.K., FANG Y.K., ZHAO D.Q., PAN M.X., HAN B.S., WANG W.H., WANG W.L., Appl. Phys. Lett., 85 (2004), 5989.
• [6] LEE H.J., RAMIREZ A.G., Appl. Phys. Lett., 85 (2004), 1146.
• [7] TANG M.B., ZHAO D.Q., PAN M.X., WANG W.H., Chin. Phys. Lett., 21 (2004), 901.
• [8] WANG D., LI Y., SUN B., Appl. Phys. Let., 84 (2004), 4029.
• [9] YU P., BAI H., WANG W., J. Mater. Res., 21 (2006), 1674.
• [10] KENOUFI A., BAILEY N.P., SCHIOTZ J., Adv.Eng. Mater., 9 (2007), 505.
• [11] XU D.H., LOHWONGWATANA B., DUAN G., JOHNSON W.L., GARLAND C., Acta Mater., 52 (2004), 2621.
• [12] DAS J., TANG M.B., KIM K.B., THEISSMANN R., BAIER F., WANG W.H., J. Phys. Rev. Lett., 94 (2005), 205501.
• [13] MUSIL J., ZEMAN P., Vacuum, 52 (1999), 269.
• [14] MUSIL J., DANIEL R., Surf. Coat. Techn., 166 (2003), 243.
• [15] KARPE N., BTTIGER J., KROG J.P., NORDSTRÖM A., RAPP Ö., Thin Solid Films, 275 (1996), 82.
• [16] DUDONIS J., BRUCAS R., MINIOTAS A., Thin Solid Films, 275 (1996), 164.
• [17] LU Z.P. , LIU C.T., Intermetall., 12 (2004),1035.
• [18] TURNBULL D., Contemp. Phys., 10 (1969), 473.
• [19] MA D., TAN H., ZHANG Y., LI Y., Mater Trans., 44 (2003), 2007.
• [20] WANG D., LI Y., SUN B.B., SUI M.L., LU K., MA E., Appl. Phys. Lett., 84 (2004), 4029.
• [21] VAUTH S., MAYR S.G., Appl. Phys. Lett., 86 (2005), 061913.
• [22] FAUPEL F., FRANK W., MACHT M.P., MEHRER H., NAUNDORF V., RATZKE K., SOCHOBER H.R., SHARMA S.K., TEICHLER H., Rev. Mod. Phys., 75 (2003), 237.