Effects of Ar+ ion sputtering on morphology and electric conductance of 6H-SiC (0001) surface

• Autorzy: Mazur, P. , Zuber, S. , Grodzicki, M. , Ciszewski, A.
• Języki publikacji: EN

Abstrakty

EN

The paper reports surface modification of SiC by Ar+ ion sputtering. Observations were performed with an ultra high vacuum atomic force microscope operating in the contact mode. The surface morphology and topography were investigated with simultaneous measurement of local changes in electric conductance. We show that the Ar+ ion bombardment of the 6H-SiC wafer surface affects the surface stoichiometry, changing the character of a metal/SiC contact from the Schottky barrier diode type into an ohmic contact type.

Słowa kluczowe

EN

silicon carbide; metal contact; ion sputtering

• Czasopismo: Materials Science Poland
• Rocznik: 2008
• Tom: Vol. 26, No. 2
• Strony: 265--269
• Opis fizyczny: Bibliogr. 9 poz.

Twórcy

autor

Mazur, P.

autor

Zuber, S.

autor

Grodzicki, M.

autor

Ciszewski, A.

• Institute of Experimental Physics, University of Wrocław, pl. Maksa Borna 9, 50-204 Wrocław, Poland

Bibliografia

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