Eu3+ And Er3+ doped SiO2 - TiO2 sol-gel films for active planar waveguides

• Autorzy: Minh, L. Q. , Huong, N. T. , Barthou, C. , Benalloul, P. , Strek, P. , Anh, T. K.
• Konferencja: International Conference on Sol-Gel materials SGM 2001, Rokosowo, Poland
• Języki publikacji: EN

Abstrakty

EN

Sol-gel films of SiO2 - TiO2 doped with Eu3+ or Er3+ ions were prepared by spin-coating with a variety of molar concentration ratios of tetraethoxysilane (TEOS) and titanium isopropoxide (TPOT). The ratios of SiO2 - TiO2 are 90/10, 85/15, 80/20, 75/25 and the concentrations of Eu and Er ions varied from 10-3 to 5.10-2 mol %. Silica-titania films annealed from 150 up to 900°C decreased their thickness from 300 to 150 nm and increased the refractive index from 1.49 to 1.62. The multilayer (6-8 layers) silica-titania thin films with thickness about 1.2 - 1.6 mm have been developed in order to make highly doped Eu3+ or Er3+ planar wave guides on silicon substrates. Luminescence spectra, lifetimes as well as FTIR and micro-Raman spectra have been measured. The influence of active ion concentrations and annealing temperature on the luminescence properties and the structure of thin films were investigated.

Słowa kluczowe

EN

sol-gel method; Eu(III); Er; thin films

• Czasopismo: Materials Science
• Rocznik: 2002
• Tom: Vol. 20, No. 2
• Strony: 47-52
• Opis fizyczny: Bibliogr. 6 poz.,

Twórcy

autor

Minh, L. Q.

autor

Huong, N. T.

autor

Barthou, C.

autor

Benalloul, P.

autor

Strek, P.

autor

Anh, T. K.

• Institute of Materials Science, NCST of Vietnam, Hanoi, Vietnam

Bibliografia

• [1] CHANCHEZ C., LEBEAU B., MRS Bulletin, May 2001, 377.
• [2] Barbier D., Orignac X., Du X.M., Almeida R.M., J.of Sol-Gel Science and Technology, 8 (1997), 1013.
• [3] HUONG T.T., ANH T.K., KHUYEN H.T., MINH L.Q., BARTHOU C., Trends in Materials and Technology, Proc. of the Third International Workshop on Materials Science IWOMS’99, Hanoi, 2–4 November 1999, 669.
• [4] ANH T.K., MINH L.Q., HUONG T.T., VU N., HUONG N.T., BARTHOU C., Physics and Engineering in Evolution, D.T. Cat, V.T. Son and A. Pucci (Eds .), 2000, 166.
• [5] ORIGNAC X., BARBIER D., DU X.M. ALMEIDA R.M., Appl. Phys. Lett., 69 (1996), 895.
• [6] Vu N., Anh T.K., Toan N.N., Hieu N.V., Barthou C. Minh L.Q., Trends in Materials and Technology, Proc. of the Third International Workshop on Materials Science IWOMS’99, Hanoi 2–4 November 1999, 645.