Light-emitting thin-film field-effect transistors

• Autorzy: Stallinga, P. , Gomes, H.L.
• Języki publikacji: EN

Abstrakty

EN

A model for thin-film field-effect transistors in which the active layer is treated as purely two-dimensional is applied to ambipolar devices that have shown to be light emitting. This results in an adequate description of the electrical characteristics.

Słowa kluczowe

EN

thin-film transistors; ambipolar; organic materials; amorphous silicon; two-dimensional electronics

• Czasopismo: Optica Applicata
• Rocznik: 2006
• Tom: Vol. 36, nr 2-3
• Strony: 373-380
• Opis fizyczny: Bibliogr. 13 poz.,

Twórcy

autor

Stallinga, P.

autor

Gomes, H.L.

• Univ. do Algarve, Faro, Portugal

Bibliografia

• [1] BABEL A., WIND J.D., JENEKHE S.A., Ambipolar charge transport in air-stable polymer blend thin-film transistors, Advanced Functional Materials 14(9), 2004, pp. 891–8.
• [2] YASUDA T., GOTO T., FUJITA K., TSUTSUI T., Ambipolar pentacene field-effect transistors with calcium source-drain electrodes, Applied Physics Letters 85(11), 2004, pp. 2098–100.
• [3] SIRRINGHAUS H., An equal-opportunity conductor, Nature Materials 2(10), 2003, pp. 641–2.
• [4] ROST C., KARG S., RIESS W., LOI M.A., MURGIA M., MUCCINI M., Ambipolar light-emitting organic field-effect transistor, Applied Physics Letters 85(9), 2004, pp. 1613–5.
• [5] SZE S.M., Physics of Semiconductor Devices, 2nd ed., Wiley 1981.
• [6] HOROWITZ G., Organic field-effect transistors, Advanced Materials 10(5), 1998, pp. 365–77.
• [7] STALLINGA P., GOMES H.L., to be published.
• [8] MUCK T., WAGNER V., BASS U., LEUFGEN M., GEURTS J., MOLENKAMP L.W., In situ electrical characterization of DH4T field-effect transistors, Synthetic Metals 146(3), 2004, pp. 317–20.
• [9] DINELLI F., MURGIA M., LEVY P., CAVALLINI M., BISCARINI F., DE LEEUW D.M., Spatially correlated charge transport in organic thin film transistors, Physical Review Letters 92(11), 2004, pp. 116802/1–4.
• [10] STALLINGA P., GOMES H.L., accepted for publication in Synthetic Metals (2006).
• [11] STALLINGA P., GOMES H.L., accepted for publication in Synthetic Metals (2006).
• [12] GOMES H.L., STALLINGA P., DINELLL F., MURGIA M., BISCARINI F., DE LEEUW D.M., MUCK T., GEURTS J., MOLENKAMP L.W., WAGNER V., Bias-induced threshold voltages shifts in thin-film organic transistors, Applied Physics Letters 84(16), 2004, pp. 3184–6.
• [13] WATANABE H., SHIMOTANI K., SHIGEMATU T., MANABE C., Electric measurements of nano-scaled devices, Thin Solid Films 438–439, 2003, pp. 462–6.