Investigation of deep defects using generation-recombination noise

• Autorzy: Gislason, H.P. , Seghier, D.
• Języki publikacji: EN

Abstrakty

EN

Noise spectroscopy is an effective tool to characterize the quality of semiconductor bulk and surface and a figure of merit for device quality as a whole. In certain cases, low-frequency noise can be used for the evaluation of device reliability. Further, measurements of the noise characteristics of GaAs materials are a useful technique when it comes to studying deep defects exhibiting a thermally activated capture. In the paper we present the technique of noise spectroscopy and illustrate it with some applications. They include photocapacitive and noise measurements on a deep DX-like defect which gives rise to persistent photoconductivity in Mg-doped p-type GaN films. We also apply DLTS, photoconductivity and noise spectroscopy to characterize n-type bulk GaAs and an EL2-related metastable defect. The third example illustrates experimental results on the photoconductivity and noise of forward and reverse biased Al0.3Ga0.7N/GaN-based Schottky barriers. In the light of these results the nature and origin of the responsible centers are discussed.

Słowa kluczowe

EN

generation-recombination noise; deep defects; GaN; AlGaN; GaAs

• Czasopismo: Optica Applicata
• Rocznik: 2006
• Tom: Vol. 36, nr 2-3
• Strony: 359-371
• Opis fizyczny: Bibliogr. 30 poz.,

Twórcy

autor

Gislason, H.P.

autor

Seghier, D.

• University of Iceland, IS-107 Reykjavik, Iceland

Bibliografia

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