Persistent photoconductivity in a InP:Fe single layer structure at room temperature

• Autorzy: Zardas, G. E. , Yannakopoulos, P. H. , Symeonides, C. I. , Csabay, O. , Euthymiou, P. C.
• Konferencja: Workshop on Functional Materials FMA 2004, Athens, Greece, 23-26 September 2005
• Języki publikacji: EN

Abstrakty

EN

Measurements of current in the dark and under illumination were carried out at room temperature on samples of semi-insulating (SI) InP:Fe, on which a layer of low resistivity InP:Fe was deposited. A voltage of 25 mV was applied. After the illumination was switched off, a remaining current was observed, for at least one hour, higher than the current before the illumination. This phenomenon is known as persistent photoconductivity (PPC) and, according to the suggested models, is due to the barriers separating electrons and holes and preventing their recombination.

Słowa kluczowe

EN

semiconductor; photoconductivity; recombination and trapping; photoelectron spectroscopy

• Czasopismo: Materials Science Poland
• Rocznik: 2005
• Tom: Vol. 23, No. 4
• Strony: 985--988
• Opis fizyczny: Bibliogr. 5 poz., rys., tab.

Twórcy

autor

Zardas, G. E.

autor

Yannakopoulos, P. H.

autor

Symeonides, C. I.

autor

Csabay, O.

autor

Euthymiou, P. C.

• University of Athens, Physics Department, Solid State Section, Athens, Greece,

Bibliografia

• [1] GAUTHIER D., GOUTIERS B., PORTAL J.C., DMOWSKI L., RAZEGHI M., Semicond. Sci. Technol., 4 (1989), 220.
• [2] ZHAO Y.-G., ZHAO G., BENSAADA A., MASUT R.A., Semicond. Sci. Technol., 7 (1992), 1359.
• [3] TSUBAKI K., FUKUI T., SAITO H., J. Appl. Phys., 60 (1986), 3224.
• [4] ZARDAS G.E., THEODOROU D.E., EUTHUMIOU P.C., SYMEONIDES CH.I., RIESZ F., SZENTPALI B., Solid State Commun., 105 (1998), 77.
• [5] VAVILOV V.S., EUTHYMIOU P.C., ZARDAS G.E., Phys. Usp., 42 (1999), 199.