Small doses γ-irradiation effect on the photoluminescence properties of porous glasses

• Autorzy: Doycho, I. K. , Gevelyuk, S. A. , Kovalenko, M. P. , Prokopovich, L. P. , Rysiakiewicz-Pasek, E.
• Konferencja: 6th Seminar Porous Glasses-Special Glasses, PGL 2002, Szklarska Poręba, 22-26.IX.2002 r.
• Języki publikacji: EN

Abstrakty

EN

The g-irradiation effect on the photoluminescence of various types of porous silica glasses and on its change during a half-year storage has been studied. It has been revealed that the photoluminescence intensity of glasses with fine matrix and almost complete absence of silica gel does not change when irradiated at applied doses, but a long-wave shift of its maximum position is observed. The increase in photoluminescence intensity appeared to be the most stable in glasses with the thick-wall matrix. The model which explains apparent changes in photo-luminescent properties and also allows us to draw conclusions about some features of various types of porous silicate glasses structure has been presented.

Słowa kluczowe

PL

szkło porowate; fotoluminescencja; napromieniowanie gamma

EN

g-irradiation; gama irradiation; photoluminescence; porous glass

• Czasopismo: Optica Applicata
• Rocznik: 2003
• Tom: Vol. 33, nr 1
• Strony: 55-65
• Opis fizyczny: Bibliogr. 12 poz., rys.

Twórcy

autor

Doycho, I. K.

• Odessa National University, Dvoryanskaya 2, 65026 Odessa, Ukraine

autor

Gevelyuk, S. A.

• Odessa National University, Dvoryanskaya 2, 65026 Odessa, Ukraine

autor

Kovalenko, M. P.

• Odessa National University, Dvoryanskaya 2, 65026 Odessa, Ukraine

autor

Prokopovich, L. P.

• Odessa National University, Dvoryanskaya 2, 65026 Odessa, Ukraine

autor

Rysiakiewicz-Pasek, E.

• Institute of Physics, Wrocław University o f Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland

Bibliografia

• [1] Astrova E.V., Vitman R.F., Emtsev V.V., Lebedev A.A., Poloskin D.S., Remenyuk A.D., Rud Yu.V., Fiz. Tekh. Poluprovodn. 30 (1996), 506 (in Russian).
• [2] Lebedev A.A., Ivanov A.M., Remenuk A.D., Rud Yu.V., Fiz. Tekh. Poluprovodn. 30 (1996), 188 (in Russian).
• [3] Vorobieva V.A., Gevelyuk S.A., Doycho I.K., Kovalenko N.P., Lishchuk D.E., Mak V.T., Prokopovich L.P., Fotoelektronika 9 (2000), 25 (in Russian).
• [4] Gevelyuk S.A, Doycho I.K., Kovalenko M.P., Lishchuk D .E ., Mak V.T., Prokopovich L.P., Chistyakov V.P., Photoelectronics 10 (2001), 91.
• [5] Gevelyuk S.A., Doycho I.K., Prokopovich L.P., Rysiakiewicz-Pasek E., Marczuk K., Ceramics 57 (1998), (Polish Ceramic Bull. 19, p. 59).
• [6] Gevelyuk S.A., Doycho I.K., Kovalenko M.P., Safronsky E.D., Rysiakiewicz-Pasek E., Roizin Y.O., Opt. Appl. 30 (2000), 635.
• [7] Arcymovich L.A., Guiderfor Nuclear Physics, Moskva 1963, p. 45 (in Russian).
• [8] Baran N.P., Bulak B.M., Dzumajev B.R., Korunskaya N.E., Poliskij G., Torchinskaya T.V., Khomenkova L.Yu ., Ukrain. Fiz. Zh. 49 (1999), 394 (in Russian).
• [9] Zhuravlev K.S., Glinsky A.M., Kobitsky A.Yu., Appl. Phys. Lett. 73 (1998), 2962.
• [10] Vavilov V.S., Kiekielidze N.P., Smirnov L.S., Influence o f Radiation on Semiconductors, [Ed.] Nauka, Moskva 1988, p.192, (in Russian).
• [11] Gevelyuk S.A., Doycho I.K., Rysiakiewicz-Pasek E., Marczuk K., J. Porous Materials 7 (2000), 465.
• [12] Burkat E.M ., Dobychin D .P., Fiz. Khim. Stekla 18 (1 992), 129 (in Russian).